IP Library Granted Patent US 8,420,548
Granted Patent B2
US 8,420,548 · App. 12/808,353 · Granted Apr 16, 2013

Method for treating germanium surfaces and solutions to be employed therein

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Quick Facts
Patent No.
US 8,420,548
App. No.
12/808,353
Granted
Apr 16, 2013
Kind
B2
Abstract

The present invention concerns an improved method for treating germanium surfaces in order to reveal crystal defects.

Claims (12)

1. A method for treating a germanium substrate, comprising the following steps:

(1) treating a germanium surface of the germanium substrate with an iodine- and bromine-free solution comprising hydrofluoric acid, nitric acid, and acetic acid,

 followed by

(2) treating the germanium surface with a solution comprising hydrofluoric acid, hydrogen peroxide, water, and a halogen compound.

2. The method of claim 1 , wherein the solution employed in step (1) consists of hydrofluoric acid, nitric acid, and acetic acid.

3. The method of claim 1 , wherein the solution used in step (2) consists of hydrofluoric acid, hydrogen peroxide, water, and a halogen compound.

4. The method of claim 1 , wherein the halogen compound comprises hydrochloric acid.

5. The method of claim 1 , wherein step (1) is carried out at a temperature in a range extending from 5° C. to 13° C.

6. The method of claim 1 , wherein step (2) is carried out at a temperature in a range extending from 5° C. to 15° C.

7. The method of claim 1 , wherein a rinsing step with deionized water is provided between steps (1) and (2).

8. The method of claim 1 , wherein a volume ratio of hydrofluoric acid to nitric acid in the solution employed in step (1) is from 1:1 to 1:5.

9. The method of claim 1 , wherein a volume ratio of hydrofluoric acid to hydrogen peroxide in the solution employed in step (2) is from 1:1 to 1:5.

Assignments (2)
CHANGE OF NAME Recorded Feb 28, 2012
From: S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES; CHEMIN DES FRANQUES; PARC TECHNOLOGIES DES FONTAINES; BERNIN. FRANCE 38190
To: SOITEC
Reel/Frame 028138/0895 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 15, 2010
From: ABBADIE, ALEXANDRA
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 024541/0026 →