Heat releasing semiconductor package, method for manufacturing the same, and display apparatus including the same

1. A heat releasing semiconductor package comprising:

a film;

an electrode pattern formed over the film;

a semiconductor device mounted over the electrode pattern;

a first heat releasing layer formed over the semiconductor device including the electrode pattern; and

a first adhesive layer formed interposed between the semiconductor device and the first heat releasing layer,

wherein the first heat releasing layer comprises an adhesive and a heat releasing material, and

wherein the first heat releasing layer comprises a nonconductive heat releasing layer.

2. The heat releasing semiconductor package of claim 1 , wherein the heat releasing material comprises at least one of a nonconductive material, a conductive material, and a mixture of the nonconductive material and the conductive material.

3. The heat releasing semiconductor package of claim 2 , wherein in a case where the heat releasing material is the nonconductive material, the heat releasing material is at least one of an organic coating agent, an inorganic coating agent, and a compound coating material.

4. The heat releasing semiconductor package of claim 2 , wherein in the case where the heat releasing material is the conductive material, the heat releasing material is at least one of a metal paste, a carbon nano tube (CNT), and a graphite.

5. The heat releasing semiconductor package of claim 1 , wherein the first heat releasing layer comprises about 5 wt % to about 15 wt % of the adhesive, and about 80 wt % to about 95 wt % of the heat releasing material.

6. The heat releasing semiconductor package of claim 1 , wherein the first heat releasing layer comprises an additive.

7. The heat releasing semiconductor package of claim 6 , wherein the first heat releasing layer comprises about 5 wt % to about 15 wt % of the adhesive, about 80 wt % to about 90 wt % of the heat releasing material, and about 5 wt % to about 15 wt % of the additive.

8. The heat releasing semiconductor package of claim 1 , comprising:

a first insulating layer formed over the first heat releasing layer.

9. A heat releasing semiconductor package comprising:

a film;

an electrode pattern formed over the film;

a semiconductor device mounted over the electrode pattern;

a first heat releasing layer over the semiconductor device including the electrode pattern, wherein the first heat releasing layer comprises an adhesive and a first heat releasing material and wherein the first heat releasing material comprises a nonconductive material;

a second heat releasing layer formed under the film; and

a first adhesive layer formed interposed between the semiconductor device and the first heat releasing layer,

wherein the second heat releasing layer comprises an adhesive and a second heat releasing material.

10. The heat releasing semiconductor package of claim 9 , wherein the second heat releasing material comprises a conductive material.

11. The heat releasing semiconductor package of claim 9 , wherein the first heat releasing layer comprises about 5 wt % to about 20 wt % of the adhesive, and about 80 wt % to about 95 wt % of the heat releasing material.

12. The heat releasing semiconductor package of claim 9 , wherein the first heat releasing layer comprises an additive.

13. The heat releasing semiconductor package of claim 12 , wherein the first heat releasing layer comprises about 5 wt % to about 15 wt % of the adhesive, about 80 wt % to about 90 wt % of the heat releasing material, and about 5 wt % to about 15 wt % of the additive.

14. The heat releasing semiconductor package of claim 9 , comprising:

a first insulating layer formed over the first heat releasing layer.

15. A display apparatus comprising:

a display panel; and

a heat releasing semiconductor package electrically connected to the display panel, the heat releasing semiconductor package comprising a film, an electrode pattern formed over the film, a semiconductor device mounted over the electrode pattern, and a first heat releasing layer formed over the semiconductor device including the electrode pattern, and a first adhesive layer formed interposed between the semiconductor device and the first heat releasing layer,

wherein the first heat releasing layer comprises a first adhesive and a first heat releasing material, and

wherein the first heat releasing layer comprises a nonconductive heat releasing layer.

16. The display device of claim 15 , comprising:

a second heat releasing layer formed under the film,

wherein the second heat releasing layer comprises a second adhesive and a second heat releasing material.