IP Library Granted Patent US 8,836,034
Granted Patent B2
US 8,836,034 · App. 12/817,481 · Granted Sep 16, 2014

Semiconductor device

Inventors: Atsushi Hirose (Kanagawa, JP); Hideaki Shishido (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,836,034
App. No.
12/817,481
Granted
Sep 16, 2014
Kind
B2
Abstract

A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a terminal electrode, a protection circuit, an integrated circuit, and a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit. The protection circuit is provided between the terminal electrode and the integrated circuit. The terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch. It is possible to reduce the damage to the semiconductor device caused by electrostatic discharge. It is also possible to reduce faults in the semiconductor device.

Claims (50)

1. A semiconductor device comprising over a substrate:

a terminal electrode;

a protection circuit;

an integrated circuit; and

a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit,

wherein the protection circuit is provided between the terminal electrode and the integrated circuit, and

wherein the wiring does not branch when seen in a plan view.

2. The semiconductor device according to claim 1 , wherein power supply voltage is configured to be applied to the terminal electrode.

3. The semiconductor device according to claim 1 , wherein the protection circuit includes a diode.

4. The semiconductor device according to claim 1 , wherein the protection circuit includes a semiconductor film.

5. The semiconductor device according to claim 1 , wherein the terminal electrode and the wiring are formed using the same conductive layer.

6. The semiconductor device according to claim 1 , wherein the semiconductor device is a photodetector.

7. The semiconductor device according to claim 1 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a mobile phone, a computer, a display device, and a digital camera.

8. A semiconductor device comprising at least:

a first terminal electrode;

a second terminal electrode;

an integrated circuit;

a first wiring not branching when seen in a plan view and electrically connecting the first terminal electrode to a first region of the integrated circuit;

a second wiring not branching when seen in the plan view and electrically connecting the second terminal electrode to a second region of the integrated circuit;

a protection circuit; and

wherein at least a part of the first wiring placed between the first terminal electrode and the integrated circuit is electrically connected to a first portion of the protection circuit, and

wherein at least a part of the second wiring placed between the second terminal electrode and the integrated circuit is electrically connected to a second portion of the protection circuit.

9. The semiconductor device according to claim 8 , wherein power supply voltage is configured to be applied to the first terminal electrode.

10. The semiconductor device according to claim 8 , wherein the protection circuit includes a diode.

11. The semiconductor device according to claim 8 , wherein the protection circuit includes a semiconductor film.

12. The semiconductor device according to claim 8 , wherein the first terminal electrode and the first wiring are formed using the same conductive layer.

13. The semiconductor device according to claim 8 , wherein the semiconductor device is a photodetector.

14. The semiconductor device according to claim 8 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a mobile phone, a computer, a display device, and a digital camera.

15. The semiconductor device according to claim 8 , wherein the first wiring and the second wiring cross each other when seen in the plan view.

16. A semiconductor device comprising at least:

a first terminal electrode;

a second terminal electrode;

an integrated circuit;

a first wiring not branching when seen in a plan view and connecting the first terminal electrode to a first region of the integrated circuit;

a second wiring not branching when seen in the plan view and connecting the second terminal electrode to a second region of the integrated circuit;

a third wiring part of the second wiring; and

a protection circuit,

wherein at least a part of the first wiring placed between the first terminal electrode and the integrated circuit is electrically connected to a first portion of the protection circuit,

wherein at least a part of the second wiring placed between the second terminal electrode and the integrated circuit is electrically connected to a second portion of the protection circuit, and

wherein the first terminal electrode overlaps with the third wiring with an insulating film interposed therebetween.

17. The semiconductor device according to claim 16 , wherein power supply voltage is configured to be applied to the first terminal electrode.

18. The semiconductor device according to claim 16 , wherein the protection circuit includes a diode.

19. The semiconductor device according to claim 16 , wherein the protection circuit includes a semiconductor film.

20. The semiconductor device according to claim 16 , wherein the first terminal electrode and the first wiring are formed using the same conductive layer.

21. The semiconductor device according to claim 16 , wherein the semiconductor device is a photodetector.

22. The semiconductor device according to claim 16 , wherein the semiconductor device is incorporated into an electronic device selected from the group consisting of a mobile phone, a computer, a display device, and a digital camera.

23. The semiconductor device according to claim 8 , further comprising:

a third wiring overlapping with the first wiring with an insulating layer interposed therebetween,

wherein the second wiring comprises a first sub-wiring and a second sub-wiring, and

wherein the third wiring electrically connects the first sub-wiring to the second sub-wiring.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2010
From: HIROSE, ATSUSHI; SHISHIDO, HIDEAKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 024638/0351 →
Priority Claims (1)
JP 2009-154099 · Jun 29, 2009 · national
Continuity (1)
Related Publication 20100328916A1 · Dec 30, 2010