High efficiency photovoltaic cell for solar energy harvesting
View Patent ↗A photovoltaic cell comprising having improved absorption of electromagnetic radiation is disclosed. The photovoltaic cell can include a rear contact, a first cell having a first band-gap energy, and a rear contact in electrical communication with an electromechanical device. The first cell can include In x Ga y Sb z , where x+y+z=1 and z ranges from 0.00001 to 0.025. the photovoltaic cell can also include a second cell having a second band-gap energy, and a first tunnel disposed between the first and second cells. The photovoltaic cell can include at least a third cell and a second tunnel disposed between the second and third cells. The uppermost cell can include GaP or InP.
1. A photovoltaic cell, comprising:
a rear contact;
a first cell having a first band-gap energy
the first cell consisting of:
an emitter layer,
a base layer,
a substrate,
optionally a window layer, and
optionally a nucleation layer;
a second cell having a second band-gap energy, wherein the second band-gap energy is from 1.0 to 1.2 eV;
a first tunnel disposed between said first cell and said second cell;
optionally a buffer layer disposed between the first tunnel and the first cell;
a third cell having a third band-gap energy; and
a second tunnel disposed between said second cell and said third cell, wherein said first cell is over said rear contact, said second cell is over said first cell, and said third cell is over said second cell, and
wherein said combination of emitter layer, base layer and substrate comprise In x Ga y Sb z , wherein x+y+z=1 and z ranges from 0.00001 to 0.025.
2. The photovoltaic cell according to claim 1 , wherein said first band-gap energy is less than said second band-gap energy, and said second band-gap energy is less than said third band-gap energy.
3. The photovoltaic cell according to claim 2 , wherein said first bad-gap energy is between 0.25 eV and 0.55 eV.
4. The photovoltaic cell according to claim 1 , wherein said first cell comprises an n+-doped In, x Ga y Sb z semiconductor layer and a p-doped In x Ga y Sb z .
5. The photovoltaic cell according to claim 1 , wherein said first cell comprises a semiconductor layer comprising InxGaySbz, wherein:
x ranges from 0.23 to 0.50,
y ranges from 0.50 to 0.77, and
z ranges from 0.00001 to 0.025.
6. The photovoltaic cell according to claim 1 , wherein said third cell comprises one or more of InP, GaP, AIInP, AIGaInP, and InGaSb.
7. The photovoltaic cell according to claim 1 , wherein said second cell comprises one or more of InGaAs, InP, and InGaP.
8. The photovoltaic cell according to claim 1 , wherein said third cell comprises one or more of InP, GaP, AIInP, AIGaInP, and InGaSb; and said second cell comprises one or more of InGaAs, InP, and InGaP.
9. The photovoltaic cell according to claim 8 , wherein
(i) said first tunnel comprises a p ++ -type GaAs or a p ++ -type AIGaAs semiconductor layer and an n ++ -type GaAs or n ++ -type InGaAs semiconductor layer;
(ii) said second tunnel comprises a p ++ _type GaAs or a p ++ _type AIGaAs semiconductor layer and an n+-type GaAs or a n++-type InGaP semiconductor layer; or
(iii) both.
10. The photovoltaic cell according to claim 1 , wherein
(i) said first tunnel comprises a p ++ _type GaAs or a p ++ _type AIGaAs semiconductor layer and an n ++ -type GaAs or n ++ -type InGaAs semiconductor layer;
(ii) said second tunnel comprises a p ++ -type GaAs or a p ++ -type AIGaAs semiconductor layer and an n + -type GaAs or a n ++ -type InGaP semiconductor layer; or
(iii) both.
11. The photovoltaic cell according to claim 1 , wherein the third cell comprises an In x ,Ga y Sb z , semiconductor layer.
12. The photovoltaic cell according to claim 1 , wherein said first cell comprises an n-type InGaSb semiconductor layer and said third cell comprises a p-type InGaSb semiconductor layer.
13. The photovoltaic cell according to claim 1 , wherein
said first cell comprises an InGaAs semiconductor layer;
said second cell comprises one or more of an InGaAs semiconductor layer, an InP semiconductor layer, and an InGaP semiconductor layer; and
said third cell comprises one or more of an InP semiconductor layer, a GaP semiconductor layer, an AIInP semiconductor layer, an AIGaInP semiconductor layer, and an InGaSb semiconductor layer.
14. The photovoltaic cell according to claim 13 , wherein
(i) said first tunnel comprises a p ++ -type GaAs or a p ++ -type AIGaAs semiconductor layer and an n ++ -type GaAs or n ++ -type InGaAs semiconductor layer;
(ij) said second tunnel comprises a p ++ -type GaAs or a p ++ -type AIGaAs semiconductor layer and an n + -type GaAs or a n ++ -type InGaP semiconductor layer; or
(iii) both.
15. The photovoltaic cell according to claim 1 , wherein
said second cell comprises an InGaAs semiconductor layer and an InGaP semiconductor layer; and
said third cell comprises a window layer comprising an AIGaInP semiconductor layer and a subcell layer comprising a GaP semiconductor layer.
16. A system for harvesting solar energy, comprising an electromechanical device in electrical communication with at least one photovoltaic cell according to claim 1 .
17. The photovoltaic cell according to claim 1 , wherein z ranges from 0.00001 to 0.00025.
18. The photovoltaic cell according to claim 1 , wherein the third band-gap energy is from is from 1.25 to 2.26 eV.
19. The photovoltaic cell according to claim 1 , wherein said second cell comprises InGaAs.
20. The photovoltaic cell according to claim 1 , wherein said third cell comprises one or more of GaP, and wherein the third band-gap energy is about 2.26 eV.
21. The photovoltaic cell according to claim 1 , wherein said third cell comprises one or more of InP, and wherein the third band-gap energy is about 1.35 eV.