VCC control inside data register of memory device

1. A memory device, comprising:

a data register coupled to a bit line, the data register comprising

a first inverter coupled to a first voltage line and a third voltage line; and

a second inverter coupled to the first inverter, the second inverter further coupled to a second voltage line and the third voltage line, the second voltage line being different from the first voltage line; and

current-limiting circuitry coupled to the first inverter and capable of supplying a controlled voltage through the first voltage line to charge the bit line.

2. The memory device of claim 1 , wherein the controlled voltage is prevented from dropping below an internal voltage supplied by the second voltage line.

3. The memory device of claim 2 , further comprising a switch capable of disconnecting the current-limiting circuitry from the first inverter.

4. The memory device of claim 3 , wherein the switch is further capable of connecting the first inverter to an internal voltage.

5. The memory device of claim 4 , wherein the current-limiting circuitry comprises a comparator coupled to a reference voltage.

6. The memory device of claim 5 , wherein the reference voltage is adjusted to control the controlled voltage.

7. The memory device of claim 6 , wherein the first inverter is coupled between the first voltage line and the third voltage line, and

wherein the second inverter is coupled between the second voltage line and the third voltage line.

8. The memory device of claim 1 , wherein the current-limiting circuitry comprises a comparator coupled to a reference voltage.

9. The memory device of claim 8 , wherein the reference voltage is adjusted to control the controlled voltage.

10. The memory device of claim 1 , wherein the controlled voltage is greater than an internal voltage supplied by the second voltage line.

11. The memory device of claim 1 , wherein the current-limiting circuitry comprises a reference current source.

12. The memory device of claim 1 , wherein the current-limiting circuitry comprises an external voltage source.

13. The memory device of claim 1 , further comprising a switch capable of disconnecting the current-limiting circuitry from the first inverter.

14. The memory device of claim 13 , wherein the switch is further capable of connecting the first inverter to an internal voltage.

15. The memory device of claim 1 , wherein the memory cell array comprises a NAND flash or NOR flash.

16. A method, comprising:

charging a bit line coupled to a data register of a memory using controlled voltage;

supplying the controlled voltage by current-limiting circuitry coupled to a first inverter inside a data register, the current-limiting circuitry comprising an external voltage source, a reference current source, and a reference voltage to control the voltage supplied to the first inverter; and

disconnecting the current-limiting circuitry from the first inverter to operate the memory device at a higher performance during programming.

17. The method of claim 16 , further comprising connecting the first inverter to the same or substantially similar voltage supplied to a second inverter inside the data register.

18. The method of claim 16 , further comprising enabling a selection of a programming speed setting based on disconnecting or connecting the current-limiting circuitry to the first inverter.

19. The method of claim 16 , wherein charging the bit line comprises adjusting the reference voltage to control the voltage supplied to the first inverter.

20. The method of claim 19 , wherein charging the bit line further comprises adjusting the reference voltage to prevent controlled voltage from dropping below a voltage supplied to a second inverter inside the data register.