Radio frequency power amplifier
A radio frequency power amplifier includes an input terminal to which a radio frequency signal is applied; a first hetero-bipolar transistor (HBT), which amplifies the radio frequency signal; a second HBT, which amplifies the radio frequency signal; a matching circuit connected to an output node of the second HBT; a switch connected to an output node of the matching circuit; and an output matching circuit connected to an output node of the first HBT. The output node of the switch is connected to the output node of the first HBT via the output matching circuit, and an impedance looking into an output side of the radio frequency power amplifier from the output node of the switch is higher than an impedance looking into the output side of the radio frequency power amplifier from the output node of the first HBT.
1. A radio frequency power amplifier which selects one path from paths according to a required output power and uses the selected path, each of the paths amplifying a signal, said radio frequency power amplifier comprising:
an input terminal to which a radio frequency signal is applied;
a first transistor, which amplifies the radio frequency signal applied to said input terminal;
a second transistor, which amplifies the radio frequency signal applied to said input terminal;
a first impedance conversion circuit connected to an output node of said second transistor;
a first switch element connected to an output node of said first impedance conversion circuit;
a second impedance conversion circuit; and
a harmonic suppression circuit,
wherein said output node of said first switch element is connected to said second impedance conversion circuit via said harmonic suppression circuit, and
an output node of said first transistor is connected to said second impedance conversion circuit not via said harmonic suppression circuit.
2. The radio frequency power amplifier according to claim 1 ,
wherein said harmonic suppression circuit includes:
a capacitor having a first end connected to said output node of said first switch element, and a second end grounded, and
a first inductor element having a first end connected to said output node of said first switch element, and a second end connected to said output node of said first transistor.
3. The radio frequency power amplifier according to claim 2 ,
wherein said first inductor element is formed of a radio frequency line formed on a GaAs substrate.
4. The radio frequency power amplifier according to claim 2 ,
wherein said first inductor element is formed of a line that is formed to be continuous with a radio frequency line included in said second impedance conversion circuit.
5. The radio frequency power amplifier according to claim 2 ,
wherein said capacitor having said second end grounded is connected to said output node of said first switch element via a second switch element.
6. The radio frequency power amplifier according to claim 5 , further comprising
a control terminal to which an off-signal and an on-signal are applied, the off-signal turning off said second switch element when the required output power is greater than a threshold, and the on-signal turning on said second switch element when the required output power is equal to or less than the threshold.
7. The radio frequency power amplifier according to claim 2 ,
wherein said first inductor element is formed of an inductor component.
8. The radio frequency power amplifier according to claim 1 ,
wherein an impedance looking into an output side of said radio frequency power amplifier from said output node of said first switch element is higher than an impedance looking into the output side of said radio frequency power amplifier from said output node of said first transistor.