SEMICONDUCTOR LIGHT RECEIVING DEVICE
According to an exemplary aspect of the present invention, at least a semiconductor mesa and a semiconductor layer covering at least the side wall of the mesa and a semiconductor mesa are formed on an n-type semiconductor substrate. The semiconductor mesa includes at least a light absorption layer and a p-type contact layer. The principal surface of the semiconductor substrate tilts at an angle θ to the (100) plane. The angle θ is 0.1 degree≦|θ|≦10 degrees.
1 . a semiconductor light receiving device comprising:
a semiconductor substrate having a first conductivity type;
a semiconductor mesa arranged over the semiconductor substrate; and
a first semiconductor layer covering at least a side wall of the semiconductor mesa, wherein
the semiconductor mesa comprises:
a light absorption layer; and
a second semiconductor layer that is arranged over the light absorption layer and has a second conductivity type opposite to the first conductivity type,
the principal surface of the semiconductor substrate tilts at an angle θ to a (100) plane by using [01-1] direction as an axis, and
the angle θ is 0.1 degree≦|θ|≦10 degrees.
2 . The semiconductor light receiving device according to claim 1 , wherein the angle θ is 0.1 degree≦|θ|≦2 degrees.
3 . The semiconductor light receiving device according to claim 1 , wherein the angle |θ| substantially equals 1 degree.
4 . The semiconductor light receiving device according to claim 1 , wherein
the light absorption layer is made of intrinsic semiconductor, and
the semiconductor light receiving device is a PIN photodiode.
5 . The semiconductor light receiving device according to claim 1 , wherein
the light absorption layer is made of semiconductor having the first type conductivity or the second type conductivity, and
the semiconductor light receiving device is an avalanche photodiode.