IP Library Granted Patent US 8,355,229
Granted Patent B2
US 8,355,229 · App. 12/826,080 · Granted Jan 15, 2013

Semiconductor device with an inductor

Inventor: Shingo Sakai (Kanagawa, JP)
Assignee: Renesas Electronics Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,355,229
App. No.
12/826,080
Granted
Jan 15, 2013
Kind
B2
Abstract

A semiconductor device including an electrostatic discharge element that protects the semiconductor device from electrostatic destruction is provided. The semiconductor device includes a first circuit, a second circuit, a connection node connecting the first node to the second node, and a first inductor connected between the connection node and a first power supply. The first inductor and the electrostatic discharge element are formed so that they vertically overlap each other.

Claims (18)

1. A semiconductor device comprising an electrostatic discharge element that protects the semiconductor device from electrostatic destruction, the semiconductor further comprising:

a first circuit;

a second circuit;

a third circuit configured for connection to a first power supply;

a first connection node connecting the first circuit to the second circuit and the third circuit; and

a first inductor connected between the first connection node and the third circuit,

wherein the first inductor and a first electrostatic discharge element of the electrostatic discharge element are formed so that they vertically overlap each other.

2. The semiconductor device according to claim 1 , wherein the first electrostatic discharge element is connected between the first connection node and a second power supply.

3. The semiconductor device according to claim 1 , wherein the first inductor is formed above the first electrostatic discharge element.

4. The semiconductor device according to claim 1 , wherein a resistance is connected in series with the first inductor between the first connection node and the first power supply.

5. The semiconductor device according to claim 1 , wherein a second inductor is connected between a connection point between the first connection node and the first inductor and the second circuit, and

the first inductor and the second inductor form a coupled inductor.

6. The semiconductor device according to claim 1 , wherein a third inductor is connected between a connection point between a second connection node and the first power supply.

7. The semiconductor device according to claim 1 , wherein a fourth inductor is connected between a connection point between a second connection node and a fourth circuit which includes a second output terminal.

8. The semiconductor device according to claim 1 , further comprising:

a second electrostatic discharge element of the electrostatic discharge element.

9. The semiconductor device according to claim 1 , wherein the first circuit includes an output buffer.

10. The semiconductor device according to claim 1 , wherein the third circuit includes the first power supply and a terminator.

Assignments (2)
CHANGE OF NAME Recorded Oct 26, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025191/0916 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2010
From: SAKAI, SHINGO
To: NEC ELECTRONICS CORPORATION
Reel/Frame 024610/0940 →
Priority Claims (1)
JP 2009-157656 · Jul 2, 2009 · national
Continuity (1)
Related Publication 20110002076A1 · Jan 6, 2011