Molybdenum containing targets
View Patent ↗The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
1. A sputter target comprising:
i) about 40 atomic % or more-molybdenum, based on the total number of atoms in the sputter target;
ii) about 1 atomic % or more titanium; and
iii) greater than 5 atomic % of a third metal element, based on the total number of atoms in the sputter target, wherein the third metal element is tantalum or chromium;
wherein the total concentration of the molybdenum, titanium, and third metal element is about 95 atomic % or more, based on the total number of atoms in the sputter target; so that the sputter target may be used for preparing a deposited film including an alloy, the alloy comprising molybdenum, titanium, and the third metal element.
2. The spatter target of claim 1 , wherein the third metal element is tantalum.
3. The sputter target of claim 1 , wherein the third metal element is chromium.
4. The sputter target of claim 3 , wherein the total concentration of titanium and the third metal element is bout 45 atomic % or less based on the total number of atoms in the sputter target; and the concentration of molybdenum is less than 85 atomic percent.
5. The sputter target of claim 1 , wherein the concentration of molybdenum in the sputter target is about 50 atomic % or more.
6. The sputter target of claim 5 , wherein the sputter to at is substantially free of niobium or contains less than 10 atomic % niobium.
7. The sputter target of claim 5 , wherein the concentration of titanium from about 5 atomic % to about 25 atomic % based on the total number of atoms in the sputter target, and wherein the concentration of the third metal element is from 5 atomic % to about 5 atomic % based on the total number of atoms in the sputter target.
8. The sputter target of claim 1 , wherein rein the sputter target includes:
i) about 40% or more by volume of a first phase based on the total volume of the sputter target, wherein the first phase includes molybdenum at a concentration of about 50 atomic % or more, based on the total number of atoms in the first phase;
ii) about 1 to abort 40% by volume of a second phase based on the total volume of the sputter target, wherein the second phase includes titanium at a concentration of about 50 atomic % or more, based on the total number of atoms in the second phase; and
iii) about 1 to about 40% by volume of a third phase based on the total volume of the sputter target, wherein the third phase includes about 50 atomic % or more of the third metal element, based on the total number of atoms in the third phase.
9. The sputter target of claim 8 , wherein the concentration of molybdenum in the sputter target is about 50 atomic % or more, the second phase is present at a concentration of 5 volume % or more, based on the total volume of the sputter target, and wherein the third phase is present at a concentration of 5 volume or more, based on the total volume of the sputter target.
10. The sputter target of claim 8 , wherein the third metal element is chromium, the second phase is a discrete phase, and the third phase is a discrete phase.
11. The sputter target of claim 8 , wherein the third metal element is tantalum, the second phase is a discrete phase, the third phase is a discrete phase, and the first phase is a continuous phase.
12. The sputter target of claim 11 , wherein the sputter target is capable of depositing by sputtering using a magnetron a deposition layer of about 200 nm in thickness on a clean silicon wafer, the deposition layer having an etch rate in ferricyanide solution at 25° C. of about 65 nm/min or less.
13. The sputter target of claim 12 , wherein the putter target is capable of depositing by sputtering using a magnetron a deposition layer of about 200 nm in thickness on a clean silicon wafer, the deposition layer having an electrical resistivity that is less than the electrical resistivity of a deposition layer having the same thickness prepared from a sputter target consisting of 50 atomic % molybdenum and 50 atomic % titanium.
14. The sputter target of claim 13 , wherein the sputter target has a length of about 1 m or more and is formed by a process that includes a step of rolling.
15. A method or making a sputter target of claim 8 , comprising the steps of:
a. blending first particles containing at least 50 atomic % of molybdenum, second particles containing at least 50 atomic % of titanium, and third particles containing at least 50 atomic % of the third metal element;
b. heating the blended particles to a predetermined temperature;
c. applying a predetermined pressure to the blended particles for a predetermined time to form a heterogeneous material; and
d. rolling the heterogeneous material to increase at least the length of the material; wherein the predetermined pressure is at least about 5000 psi, the predetermined temperature is about 1100° C. or more, and the predetermined time is about 1 hour or more.
16. A process comp sing the step of:
depositing film on a substrate by sputtering the sputter target of claim 1 .
17. An article including a substrate and a deposited layer, wherein the deposited layer is deposited from a sputter target of claim 1 , and the deposited layer includes an alloy including molybdenum, titanium, and the third metal element.
18. The article of claim 17 , wherein the deposited layer has an etch rate in ferricyanide solution at 25° C. of about 65 nm/min or less.
19. The article of claim 17 , wherein the deposited layer has are electrical resistivity of 40 μΩ·cm or less.
20. A process comprising the step of etching the molybdenum containing layer of the article of claim 17 at a rate of less than about 65 nm/min.
21. A sputter target comprising:
i. from about 40 atomic to less than 85 atomic % molybdenum, based on the total number of atoms in the sputter target:
ii. about 1 atomic % or more titanium, based on the total number of stoma in the sputter target, and
iii. 5 atomic % or more tantalum, based on the total number of atoms in the sputter target; so that the sputter target may be used for preparing a deposited film including an alloy, the alloy comprising molybdenum, titanium, and tantalum.
22. A sputter target comprising:
i) about 40 atomic % or more-molybdenum, based on the total number of atoms in the sputter target;
ii) about 1 atomic % or more titanium; and
iii) greater than 1 atomic % tantalum, based on the total number of atoms in the sputter target; so that the sputter target may be used for preparing a deposited film including an alloy, the alloy comprising molybdenum, titanium, and the third metal element;
wherein the sputter target includes:
a) about 40% or more by volume of a first phase based on the total volume of the sputter target, wherein the first phase includes molybdenum at a concentration of about 50 atomic % or more, based on the total number of atoms in the first phase;
b) about 1 to about 40% by volume of a second phase based on the total volume of the sputter target, wherein the second phase includes titanium at a concentration of about 50 atomic % or more, based on the total number of atoms in the second phase; and
c) about 1 to about 40% by volume of a third phase based on the total volume of the sputter target, wherein the third phase includes about 50 atomic % or more of the third metal element, based on the total number of atoms in the third phase.