Flatband voltage adjustment in a semiconductor device
View Patent ↗Memory devices, methods for fabricating, and methods for adjusting flatband voltages are disclosed. In one such memory device, a pair of source/drain regions are formed in a semiconductor. A dielectric material is formed on the semiconductor between the pair of source/drain regions. A control gate is formed on the dielectric material. A charged species is introduced into the dielectric material. The charged species, e.g., mobile ions, has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A flatband voltage of the memory device can be adjusted by moving the charged species to different levels within the dielectric material, thus programming different states into the device.
1. A semiconductor device comprising:
a semiconductor;
a dielectric material adjacent to the semiconductor;
a charged species in the dielectric material that has an activation energy of diffusion within the dielectric material in a range of greater than about 0.9 eV to about 3.0 eV and is configured to provide data retention in the dielectric material; and
a control gate adjacent to the dielectric material.
2. The semiconductor device of claim 1 wherein the charged species is selected from a group consisting of an anion and a cation.
3. The semiconductor device of claim 1 wherein the charged species comprises at least one of calcium ions or magnesium ions.
4. The semiconductor device of claim 1 wherein the control gate is configured to adjust a flatband voltage of the device in response to a voltage on the control gate.
5. The semiconductor device of claim 1 wherein the control gate comprises at least one of polysilicon or metal.
6. The semiconductor device of claim 1 wherein the dielectric material is silicon dioxide.
7. A non-volatile memory device comprising:
a semiconductor having a pair of source/drain regions;
a dielectric material adjacent to the semiconductor between the pair of source/drain regions;
a charged species in the dielectric material that has an activation energy of diffusion within the dielectric material greater than about 0.9 eV and is configured to provide data retention in the dielectric material; and
a control gate adjacent to the dielectric material.
8. The non-volatile memory device of claim 7 wherein the dielectric material is an oxide.
9. The non-volatile memory device of claim 7 wherein the dielectric material is configured to be a tunnel dielectric and is formed over a channel region of the semiconductor.
10. The non-volatile memory device of claim 7 wherein the dielectric material is less than 70 Å.
11. The non-volatile memory device of claim 7 wherein the non-volatile memory device is a MOSFET memory cell.
12. The non-volatile memory device of claim 7 wherein the non-volatile memory device is configured to be a multiple level cell.
13. A semiconductor device comprising:
a semiconductor;
a dielectric material adjacent to the semiconductor;
a charged species in the dielectric material that has an activation energy of diffusion within the dielectric material greater than that of hydrogen ions in the dielectric material to about 3.0 eV and is configured to provide data retention in the dielectric material; and
a control gate adjacent to the dielectric material.
14. The semiconductor device of claim 13 wherein the charged species is configured to be moved to one of a plurality of different levels of the dielectric material.
15. The semiconductor device of claim 14 wherein each of the plurality of different levels comprise one of a plurality of different states.
16. The semiconductor device of claim 13 wherein the charged species is a positively charged ion and the control gate is configured to attract the charged species in response to a negative voltage on the control gate.
17. The semiconductor device of claim 13 wherein the charged species is a negatively charged ion and the control gate is configured to repel the charged species in response to a negative voltage on the control gate.