Method of producing transparent conductive film glass
View Patent ↗A method for producing transparent conductive glass by a) depositing two barrier layers on the surface of hot glass by chemical vapor deposition; and b) depositing two conductive film layers on the surface of the glass ribbon having the two barrier layers. The method is easy to control and suitable for mass production. The resultant transparent conductive glass has low surface resistance and moderate haze.
1. A method for producing transparent conductive glass comprising the steps of
a) disposing a coating device for depositing barrier layer above a glass ribbon in a tin bath of float glass production line;
b) diluting diborane, silane, ethylene, and carbon dioxide with an inert gas to a volume percent of 1-15%, 10-30%, 90-100%, and 70-100% respectively;
c) depositing two barrier layers on the surface of hot glass having a temperature of 620-700° C. by chemical vapor deposition, a gas mixture for depositing a first barrier layer comprising said diborane, said silane, said ethylene, and said carbon dioxide with a volume ratio of 0.0002-0.010:1:3.5-6.0:3.5-6.0, and a gas mixture for depositing a second barrier layer comprising said diborane, said silane, said ethylene, and said carbon dioxide with a volume ratio of 0.0006-0.020:1:3.5-6.0:3.5-8.0;
d) disposing two linear coating devices comprising a plurality of inlets and outlets in an A 0 zone of an annealing lehr having a temperature of 550-610° C. in said float production line; and
e) depositing two conductive film layers on the surface of said glass ribbon comprising said two barrier layers, a gas mixture for depositing said two conductive film layers comprising 0.2-3.5 mole % of a tin compound, 0.2-3.0 mole % of a dopant, 0.25-3.0 mole % of a reaction control agent, 0.5-13 mole % of a haze control agent, 2-8 mole % of a carrier gas, and the rest is a dilution gas.
2. The method of claim 1 , wherein a thickness of said first barrier layer is between 30 and 40 nm with a refractive index of between 1.6 and 1.65; the thickness of said second barrier layer is between 40 and 60 nm with a refractive index of between 1.65 and 1.80.
3. The method of claim 1 , wherein a thickness of said two conductive film layers is between 450 and 800 nm.
4. The method of claim 1 , wherein said tin compound is trifluoroacetic acid-butyl tin dichloride ester, dibutyltin maleic acid, dibutyltin diacetate, tin tetrachloride, monobutyltin trichloride, tetramethyl tin, or dimethyl tin dichloride.
5. The method of claim 1 , wherein said dopant is a mixture of a fluorine compound, a phosphorus compound, and an antimony compound.
6. The method of claim 5 , wherein said fluorine compound and said phosphorus compound are selected from the group consisting of trifluoroacetic acid, phosphorus trifluoride, phosphorus pentafluoride, benzotrifluoride, hydrogen fluoride, hexafluoropropylene, bromotrifluoroemethane, and triethyl phosphate.
7. The method of claim 5 , wherein said antimony compound is antimony trichloride or antimony tribromide.
8. The method of claim 1 , wherein said reaction control agent is oxygen or water.
9. The method of claim 1 , wherein said haze control agent is tin tetrachloride, oxygen, water, ethanol, propanol, butanol, or methanol.
10. The method of claim 1 , wherein said inert gas is nitrogen, helium, or argon.
11. The method of claim 1 , wherein said dilution gas is air, nitrogen, helium, or argon.
12. The method of claim 1 , wherein said carrier gas is air, nitrogen, helium, or argon.