Display device, method for manufacturing the same, and electronic device having the same
View Patent ↗In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.
1. A display device comprising:
a pixel comprising a first p-channel thin film transistor and a light-emitting element; and
a driver circuit comprising a second p-channel thin film transistor,
wherein one of a source and a drain of the first p-channel thin film transistor is electrically connected to the light-emitting element,
wherein a concentration of an impurity element imparting p-type conductivity included in a channel region of the first p-channel thin film transistor is lower than a concentration of an impurity element imparting p-type conductivity included in a channel region of the second p-channel thin film transistor.
2. The display device according to claim 1 ,
wherein a value of cutoff current of the first p-channel thin film transistor is less than or equal to 2×10 −11 A.
3. The display device according to claim 1 ,
wherein the impurity element imparting p-type conductivity is boron.
4. An electronic device having the display device according to claim 1 ,
wherein the electronic device is selected from the group consisting of a portable information terminal device, a digital video camera, a mobile phone, a portable television device, a portable computer, and a television device.