Solid-state light emitters having substrates with thermal and electrical conductivity enhancements and method of manufacture

1. A solid-state lighting device (SSLD) comprising:

an active solid-state light emitter (SSLE), the SSLE having a front side and a back side opposite the front side, wherein the SSLE comprises an N-type GaN material, an InGaN material, and a P-type GaN material stacked on each other;

a carrier substrate having a first outer surface, a second outer surface opposite the first outer surface, and at least one aperture extending from the first outer surface to the second outer surface of the carrier substrate, wherein the second outer surface of the carrier substrate faces toward the back side of the SSLE, and wherein the carrier substrate comprises an electrically conductive material;

a conductor in the at least one aperture and exposed at the first outer surface of the carrier substrate, wherein the conductor extends through the carrier substrate, and wherein both the carrier substrate and the conductor electrically couple one of the N-type GaN material or the P-type GaN material to a contact at the first outer surface of the carrier substrate, wherein one end of the conductor terminates at the first outer surface and another end of the conductor terminates at the second outer surface of the carrier substrate;

a reflective material on the second outer surface of the carrier substrate, wherein the reflective material is configured to reflect radiation emitted by the SSLE; and

a package substrate directly contacting the first outer surface of the carrier substrate, wherein the package substrate carries a first electrical contact and a second electrical contact for the SSLE.

2. The SSLD of claim 1 wherein the carrier substrate comprises silicon, and wherein the reflective material comprises at least one of copper, silver, aluminum and gold.

3. The SSLD of claim 1 wherein the conductor comprises a material having a higher electrical conductivity and a higher thermal conductivity than the carrier substrate.

4. The SSLD of claim 1 wherein the SSLE is surface mounted to the carrier substrate with the P-type GaN material electrically coupled to the second outer surface of the carrier substrate.

5. The SSLD of claim 1 wherein the SSLE is surface mounted to the carrier substrate with the N-type GaN material electrically coupled to the second outer surface of the carrier substrate.

6. The SSLD of claim 1 wherein the at least one aperture is a plurality of apertures having sidewalls, and wherein the conductor further comprises:

a diffusion barrier substantially conforming to the sidewalls of the apertures;

a conductive material at least partially filling the apertures, the conductive material having a higher thermal conductivity and a higher electrical conductivity than the carrier substrate.

7. The SSLD of claim 6 wherein the apertures comprise a plurality of elongated trenches and the conductive material at least partially fills the trenches.

8. The SSLD of claim 6 wherein the apertures are holes and the conductive material at least substantially fills the holes.

9. The SSLD of claim 1 , further comprising:

a converter material covering at least a portion of the SSLE, wherein the converter material and SSLE are configured to emit white light.

10. A solid-state lighting device (SSLD) comprising:

a carrier substrate having a first outer surface and a second outer surface opposite the first outer surface, wherein the carrier substrate comprises an electrically conductive material;

a solid state light emitter (SSLE) comprising an N-type GaN material, an InGaN material over the N-type material, and a P-type GaN material over the InGaN material, wherein the SSLE is mounted to the second outer surface of the carrier substrate;

a conductor extending through the carrier substrate, the conductor comprising a conductive material having a higher electrical conductivity and a higher thermal conductivity than the carrier substrate, wherein both the carrier substrate and the conductor electrically couple either the N-type GaN material or the P-type GaN material to a contact at the first outer surface of the carrier substrate;

a continuous reflective material on one of the first and second surfaces of the carrier substrate, wherein the reflective material is configured to reflect radiation emitted by the SSLE, wherein the reflective material extends across the entire SSLE, and wherein one end of the conductor terminates at the first outer surface of the carrier substrate and another end of the conductor terminates at the reflective material of the carrier substrate; and

a package subrate directly contacting the first outer surface of the carrier substrate, wherein the package substrate carries a first electrical contact and a second electrical contact for the SSLE.

11. The SSLD of claim 10 wherein the N-type GaN material is surface mounted to the second outer surface of the carrier substrate, the P-type GaN material includes a first contact pad, and the conductor extends completely through the carrier substrate, and wherein the SSLD further comprises:

a wirebond electrically coupling the first contact pad to the package substrate.

12. The SSLD of claim 10 wherein the P-type GaN material is surface mounted to the second outer surface of the carrier substrate, the N-type GaN material includes a first contact pad, and the conductor extends completely through the carrier substrate, and wherein the SSLD further comprises:

a wirebond electrically coupling the first contact pad to the package substrate.

13. The SSLD of claim 10 wherein the conductor further comprises a diffusion barrier.

14. The SSLD of claim 1 , wherein the reflective material extends across the entire back side of the SSLE.