METHOD OF FORMING FIBROUS LAMINATE CHIP CARRIER STRUCTURES
A method for making a leadless chip carrier (LCC) for use in electronic packages having a core layer stripped of copper cladding, containing drilled clearance holes within, a layer of resin coated copper (RCC) placed on the upper surface of the core layer and a second layer of RCC placed on the lower surface of the core layer. The layers are laminated together with the RCC filling the clearance holes during lamination. A pattern is etched on the RCC and vias are drilled through the filled clearance holes and pre-plated with seed copper layers. The seed copper layers in the vias are then covered by a layer of copper plating to meet the requirements of the core buildup layer, and resin inhibiting conductive anodic filament (CAF) growth within the structure.
1 . A method of forming a laminated chip carrier (LCC) for use in electronic packages, the steps comprising:
a) providing a non-woven laminate having an upper copper surface and a lower copper surface;
b) removing said upper and said lower copper surfaces to form a core layer having an upper surface and a lower surface;
c) forming a clearance hole in said core layer;
d) disposing a first layer of dielectric having a copper coated upper side and a lower side on said upper surface of said core layer;
e) disposing a second layer of dielectric having an upper side and a copper coated lower side on said lower surface of said core layer; and
f) laminating all of said layers together, forming a first subassembly having a top and a bottom surface, wherein said first and said second layers of copper coated dielectric fill in said clearance hole.
2 . The method of forming an LCC for use in electronic packages as in claim 1 , the steps further comprising:
g) etching a pattern in said top and said bottom surfaces of said first subassembly;
h) forming a via within said clearance hole through said first subassembly, said via being isolated from said non-woven laminate; and
i) depositing a layer of copper in said via.
3 . The method of forming an LCC as in claim 1 , wherein said core layer comprises P-aramid paper material.
4 . The method of forming an LCC as in claim 2 , wherein said forming said via step (h) further comprises pre-plating said via by a conventional cleaning process and depositing a seed copper layer therein.
5 . The method of forming an LCC as in claim 1 , wherein said first and said second layers of copper coated dielectric comprise DC/Silica resin coated copper (RCC).
6 . The method of forming an LCC as in claim 1 , wherein said forming said clearance hole step (c) is accomplished using at least one type of laser from the group: UV, IR, and Nd-YAG.
7 . The method of forming an LCC as in claim 2 , wherein said forming said via step (h) is accomplished using at least one type of laser from the group: UV, IR, and Nd-YAG.
8 . The method of forming an LCC as in claim 2 , wherein said etching a pattern step (g) comprises etching a pattern from on at least one of the group: power plane and ground plane.
9 . A method of forming a laminated chip carrier (LCC) for use in electronic packages, the steps comprising:
a) providing a non-woven laminate having an upper copper surface and a lower copper surface;
b) etching a clearance hole pattern in said upper copper surface of said non-woven laminate;
c) forming a hole in said clearance hole pattern on said non-woven laminate;
d) removing said upper and said lower copper surfaces to form a core layer having an upper surface and a lower surface;
e) disposing a first layer of dielectric having a copper coated upper side and a lower side on said upper surface of said core layer;
f) disposing a second layer of dielectric having an upper side and a copper coated lower side on said lower surface of said core layer; and
g) laminating all of said layers together, forming a first subassembly having a top and a bottom surface, wherein said first and said second layers of copper coated dielectric fill in said clearance hole.
10 . The method of forming an LCC for use in electronic packages as in claim 9 , the steps further comprising:
h) etching a pattern in said top and said bottom surfaces of said first subassembly;
i) forming a via within said clearance hole through said first subassembly, said via being isolated from said non-woven laminate; and
j) depositing a layer of copper in said via.
11 . The method of forming an LCC as in claim 9 , wherein said core layer comprises P-aramid paper material.
12 . The method of forming an LCC as in claim 10 , wherein said forming said via step (i) further comprises pre-plating said via by a conventional cleaning process and depositing a seed copper layer therein.
13 . The method of forming an LCC as in claim 9 , wherein said first and said second layers of copper coated dielectric comprise DC/Silica resin coated copper (RCC).
14 . The method of forming an LCC as in claim 9 , wherein said forming said hole step (c) is accomplished using at least one type of laser from the group: UV, IR, and Nd-YAG.
15 . The method of forming an LCC as in claim 10 , wherein said forming said via step (i) is accomplished using at least one type of laser from the group: UV, IR, and Nd-YAG.
16 . The method of forming an LCC as in claim 10 , wherein said etching a pattern step (h) comprises etching a pattern from on at least one of the group: power plane and ground plane.
17 . A method of forming a laminated chip carrier (LCC) for use in electronic packages, the steps comprising:
a) providing a non-woven laminate having an upper copper surface and a lower copper surface;
b) removing said upper and said lower copper surfaces to form a core layer having an upper surface and a lower surface;
c) disposing a first layer of dielectric having a copper coated upper side and a lower side on said upper surface of said core layer;
d) disposing a second layer of dielectric having an upper side and a copper coated lower side on said lower surface of said core layer;
e) laminating all of said layers together, forming a first subassembly having a top and a bottom surface;
f) etching a pattern in said top and said bottom surfaces of said first subassembly;
g) forming a via through said first subassembly; and
h) depositing a layer of copper in said via.
18 . The method of forming an LCC as in claim 17 , wherein said core layer comprises P-aramid paper material.
19 . The method of forming an LCC as in claim 17 , wherein said forming said via step (g) further comprises pre-plating said via by a conventional cleaning process and depositing a seed copper layer therein.
20 . The method of forming an LCC as in claim 17 , wherein said first and said second layers of copper coated dielectric comprise DC/Silica resin coated copper (RCC).
21 . The method of forming an LCC as in claim 17 , wherein said forming said via step (g) is accomplished using at least one type of laser from the group: UV, IR, and Nd-YAG.
22 . The method of forming an LCC as in claim 17 , wherein said etching a pattern step (f) comprises etching a pattern from on at least one of the group: power plane and ground plane.