Photosensitive resin composition, photosensitive element, method for forming resist pattern and method for producing printed wiring board

1. A photosensitive resin composition comprising:

(A) a binder polymer having a weight-average molecular weight of 40,000 to 80,000;

(B) a photopolymerizable compound that has an ethylenically unsaturated bond; and

(C1) a compound represented by general formula (1) below,

wherein, at least one R represents a C 1-10 alkoxy group; the sum of a, b, and c is 1 to 6; and when the sum of a, b, and c is 2 to 6, each R may be the same as or different from one another.

2. The photosensitive resin composition according to claim 1 , wherein the content of the component (C1) is 0.05 to 0.8 mass parts per 100 mass parts of the total content of the components (A) and (B).

3. The photosensitive resin composition according to claim 1 , wherein the component (A) comprises an acrylic-type polymer that has as constituent units thereof a monomer unit derived from acrylic acid and/or methacrylic acid and a monomer unit derived from an alkyl ester of acrylic acid and/or an alkyl ester of methacrylic acid.

4. The photosensitive resin composition according to claim 1 , wherein the component (B) comprises a (meth)acrylate compound that contains a bisphenol skeleton.

5. The photosensitive resin composition according to claim 1 , further comprising (C2) a 2,4,5-triarylimidazole dimer or a derivative thereof.

6. The photosensitive resin composition according to claim 5 , wherein the content of the component (C2) is 3 to 5 mass parts per 100 mass parts of the total content of the components (A) and (B).

7. The photosensitive resin composition according to claim 1 , wherein the R is a methoxy group.

8. The photosensitive resin composition according to claim 1 , wherein the sum of a, b, and c is 1 or 2.

9. The photosensitive resin composition according to claim 1 , that is used to form a resist pattern by exposure to light having a peak in the wavelength range from at least 350 nm to less than 440 nm.

10. The photosensitive resin composition according to claim 1 , wherein the wavelength of maximum absorption by component (C1) is at least 370 nm to less than 420 nm.

11. A photosensitive element comprising a support and a photosensitive layer that is provided on said support, and that comprises the photosensitive resin composition according to claim 1 .

12. A method of forming a resist pattern, comprising:

forming a photosensitive layer comprising the photosensitive resin composition according to claim 1 , on a substrate;

exposing prescribed regions of the photosensitive layer to light that has a peak in the wavelength range from at least 350 nm to less than 440 nm; and

developing the exposed photosensitive layer to form a resist pattern.

13. The method of forming a resist pattern according to claim 12 , wherein the exposing is carried out by a direct imaging exposure technique.

14. A method of producing a printed wiring board, comprising:

forming a photosensitive layer comprising the photosensitive resin composition according to claim 1 , on a substrate;

exposing prescribed regions of the photosensitive layer to light that has a peak in the wavelength range from at least 350 nm to less than 440 nm;

developing the exposed photosensitive layer to form a resist pattern; and

forming a conductor pattern on the substrate based on said resist pattern.

15. The method of producing a printed wiring board according to claim 14 , wherein the exposing is carried out by a direct imaging exposure technique.

16. The photosensitive resin composition according to claim 3 , wherein the component (A) also has as constituent units thereof a monomer unit derived from styrene.