Fusion formable silica and sodium containing glasses
Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≧535° C., for example, ≧570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.
1. A photovoltaic device, comprising
a glass consisting essentially of in weight percent:
50 to 72 percent SiO 2 ;
greater than 15 to 25 percent Al 2 O 3 ;
0 to 10 percent B 2 O 3 ;
10 to 25 percent total M 2 O;
greater than 0 to 25 percent total RO;
wherein M is an alkali metal selected from Na, K, Li, Rb, and Cs, wherein the glass comprises at least 9 weight percent Na 2 O, and
wherein R is an alkaline earth metal selected from Mg, Ca, Ba, and Sr,
wherein the glass comprises less than 4 weight percent K 2 O, the glass is in the form of a sheet and is a substrate or superstate; and
an active photovoltaic medium adjacent to the substrate or supersrate,
wherein the glass has a strain point of 535° C. or greater, a coefficient of thermal expansion of 50 ×10 −7 or greater, and a liquidus viscosity of 130,000 poise or greater.
2. The photovoltaic device according to claim 1 , wherein the active photovoltaic medium comprises copper indium gallium diselenide or cadmium telluride.
3. The photovoltaic device according to claim 1 , wherein the glass comprises 0.5 to less than 14 weight percent RO.
4. The photovoltaic device according to claim 3 , wherein the glass comprises less than 2.5 weight percent MgO.
5. The photovoltaic device according to claim 1 , wherein the glass comprises 55 to 72 weight percent SiO 2 .
6. The photovoltaic device according to claim 1 , wherein the glass comprises 9 to 17 weight percent Na 2 O.
7. The photovoltaic device according to claim 1 , comprising a barrier layer between the active photovoltaic medium and the substrate or superstrate.
8. The photovoltaic device according to claim 1 , wherein the glass comprises less than 2.5 weight percent MgO.
9. The photovoltaic device according to claim 1 , wherein the glass comprises 0 to 3 percent K 2 O.
10. The photovoltaic device according to claim 1 , wherein the glass is substantially free of K 2 O.
11. The photovoltaic device according to claim 1 , wherein the glass comprises no B 2 O 3 .
12. The photovoltaic device according to claim 1 , wherein the glass comprises 21 to 25 percent Al 2 O 3 .
13. The photovoltaic device according to claim 12 , wherein the glass comprises 0 to 3 percent K 2 O.
14. The photovoltaic device according to claim 12 , wherein the glass is substantially K 2 O free.
15. The photovoltaic device according to claim 12 , wherein the glass comprises no B 2 O 3 .
16. A glass consisting essentially of in weight percent:
50 to 72 percent SiO 2 ;
21 to 25 percent Al 2 O 3 ;
0 to 10 percent B 2 O 3 ;
10 to 25 percent total M 2 O; and
greater than 0 to 25 percent total RO;
wherein M is an alkali metal selected from Na, K, Li, Rb, and Cs, wherein the glass comprises at least 9 weight percent Na 2 O, wherein R is an alkaline earth metal selected from Mg, Ca, Ba, and Sr, and wherein the glass comprises less than 4 weight percent K 2 O,
wherein the glass has a strain point of 535° C. or greater, a coefficient of thermal expansion of 50 ×10 −7 or greater, and a liquidus viscosity of 130,000 poise or greater.
17. The glass according to claim 16 , comprising 0 to 3 percent K 2 O.
18. The glass according to claim 16 , substantially free of K 2 O.
19. The glass according to claim 16 , comprising no B 2 O 3 .