IP Library Granted Patent US 7,978,000
Granted Patent B2
US 7,978,000 · App. 12/841,362 · Granted Jul 12, 2011

Semiconductor temperature sensor using bandgap generator circuit

Assignee: Micron Technology, Inc.
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Quick Facts
Patent No.
US 7,978,000
App. No.
12/841,362
Granted
Jul 12, 2011
Kind
B2
Abstract

A combined bandgap generator and temperature sensor for an integrated circuit is disclosed. Embodiments of the invention recognize that bandgap generators typically contain at least one temperature-sensitive element for the purpose of cancelling temperature sensitivity out of the reference voltage the bandgap generator produces. Accordingly, this same temperature-sensitive element is used in accordance with the invention as the means for indicating the temperature of the integrated circuit, without the need to fabricate a temperature sensor separate and apart from the bandgap generator. Specifically, in one embodiment, a voltage across a temperature-sensitive junction from a bandgap generator is assessed in a temperature conversion stage portion of the combined bandgap generator and temperature sensor circuit. Assessment of this voltage can be used to produce a voltage- or current-based output indicative of the temperature of the integrated circuit, which output can be binary or analog in nature.

Claims (32)

1. An integrated circuit, comprising:

a first generator for producing a temperature-independent reference voltage, wherein the first generator comprises at least one temperature-sensitive element;

a temperature sensor for indicating a temperature to the integrated circuit via an output, wherein the temperature sensor comprises the at least one temperature-sensitive element such that the at least one temperature-sensitive element is common to both the first generator and the temperature sensor; and

a circuit block distinct from the temperature sensor for receiving the temperature-independent reference voltage.

2. The circuit of claim 1 , wherein the first generator comprises a bandgap generator.

3. The circuit of claim 1 , wherein the at least one temperature-sensitive element comprises a P—N junction.

4. The circuit of claim 1 , wherein the temperature sensor assesses a voltage across the at least one temperature-sensitive element to indicate the temperature to the integrated circuit via the output.

5. The circuit of claim 1 , wherein the temperature sensor assesses a temperature-sensitive voltage indicative of the temperature of at least one temperature-sensitive element.

6. The circuit of claim 1 , wherein the output is binary in nature, and wherein the binary output indicates the temperature relative to a set point temperature.

7. The circuit of claim 6 , wherein the set point temperature is trimmable.

8. The circuit of claim 1 , wherein the output is analog.

9. The circuit of claim 1 , wherein the analog output is represented digitally.

10. The circuit of claim 1 , wherein the temperature sensor receives at least a scalar of the temperature-independent reference voltage.

11. The circuit of claim 1 , wherein the temperature sensor comprises a temperature conversion stage.

12. The circuit of claim 10 , wherein the temperature conversion stage receives at least a scalar of the temperature-independent reference voltage.

13. The circuit of claim 1 , wherein the circuit block comprises a second generator.

14. The circuit of claim 12 , wherein second generator produces a second reference voltage used for sensing the logic values stored in an array of memory cells.

15. An integrated circuit, comprising:

a first generator for producing a temperature-independent reference voltage, wherein the first generator comprises at least one temperature-sensitive element;

a temperature sensor for indicating a temperature to the integrated circuit via an output, wherein the temperature sensor receives a temperature-sensitive voltage indicative of the temperature of the at least one temperature-sensitive element; and

a circuit block distinct from the temperature sensor for receiving the temperature-independent reference voltage.

16. The circuit of claim 15 , wherein the temperature sensor comprises a conversion stage for receiving the temperature-sensitive voltage and for converting that voltage to temperature information interpretable by the integrated circuit.

17. The circuit of claim 16 , wherein the conversion stage also receives the temperature-independent reference voltage.

18. The circuit of claim 17 , wherein conversion stage comprises an operational amplifier for producing the output, and wherein the comparator receives as inputs the temperature-sensitive voltage and a scalar of the temperature-independent reference voltage.

19. The circuit of claim 18 , wherein the scalar is less than 1.

20. The circuit of claim 17 , wherein conversion stage comprises an operational amplifier for producing the output, and wherein the comparator receives as inputs a first voltage and a second voltage, wherein the first voltage is produced by a first voltage divider between the temperature-independent reference voltage and ground, and wherein the second voltage is produced by a second voltage divider between the temperature-independent reference voltage and ground, wherein both the first and second voltage dividers receive the temperature-sensitive voltage as an input.

21. The circuit of claim 16 , wherein conversion stage comprises an analog-to-digital converter for converting the temperature-sensitive voltage to the output.

22. The circuit of claim 16 , wherein the conversion stage comprises a transistor for receiving the temperature-sensitive voltage and for producing a current through the transistor, and wherein the current is input to analog-to-digital converter for producing the output.

23. The circuit of claim 16 , wherein the conversion stage converts the temperature-sensitive voltage to a temperature-sensitive current, and wherein the temperature sensitive current is used to form the output.

24. The circuit of claim 15 , wherein the circuit block comprises a second generator for producing a second reference voltage from the temperature-independent reference voltage.

25. The circuit of claim 24 , further comprising an array of memory cells, and wherein the second reference voltage is used in sensing logic values stored in the memory cells.

26. The method of claim 15 , wherein the temperature-independent reference voltage is approximately equal to 1.2 Volts.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2010
From: ZIMLICH, DAVID
To: MICRON TECHNOLOGY, INC.
Reel/Frame 024725/0073 →
Continuity (2)
Continuation 11330987 · Jan 12, 2006
Related Publication 20100283530A1 · Nov 11, 2010