Resist pattern-forming method and resist pattern miniaturizing resin composition

1. A resist pattern-forming method comprising:

forming a first resist pattern using a first positive-tone radiation-sensitive resin composition;

applying a resist pattern-miniaturizing resin composition to the first resist pattern;

baking the resist pattern-miniaturizing resin composition applied to the first resist pattern to form a layer soluble by a developer in the first resist pattern;

developing the resist pattern-miniaturizing resin composition and the first resist pattern by the developer to dissolve the layer and to form a second resist pattern that is miniaturized from the first resist pattern;

applying a resist pattern-insolubilizing resin composition to the second resist pattern;

baking and washing the resist pattern-insolubilizing resin composition applied to the second resist pattern to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition;

forming a second resist layer on the third resist pattern using the second positive-tone radiation-sensitive resin composition; and

exposing and developing the second resist layer to form a fourth resist pattern.

2. The resist pattern-forming method according to claim 1 , wherein the pattern-miniaturizing resin composition comprises:

a fluorine-containing resin that is soluble in an alkaline solution; and

a non-aqueous solvent.

3. The resist pattern-forming method according to claim 2 , wherein the non-aqueous solvent comprises a monohydric alcohol having 1 to 12 carbon atoms in an amount of 60 mass % or more.

4. The resist pattern-forming method according to claim 2 , wherein the fluorine-containing resin comprises at least one of a repeating unit that includes a group shown by a following general formula (1) and a repeating unit that includes a group shown by a following general formula (2),

wherein each of R 1 and R 2 represents at least one of a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and a fluoroalkyl group having 1 to 4 carbon atoms wherein at least one of R 1 and R 2 represents a fluoroalkyl group having 1 to 4 carbon atoms, and R 3 represents a linear or branched alkyl group having 1 to 10 carbon atoms wherein at least one hydrogen atom is substituted with a fluorine atom.

5. The resist pattern-forming method according to claim 4 , wherein the repeating unit that includes the group shown by the general formula (1) is derived from a monomer shown by a following general formula (1-1),

wherein each of R 4 , R 5 , and R 6 represents at least one of a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a hydroxymethyl group, a trifluoromethyl group, and a phenyl group, A represents a single bond, an oxygen atom, a carbonyl group, a carbonyloxy group, or an oxycarbonyl group, and B represents a single bond, a saturated chain-like hydrocarbon group having 1 to 20 carbon atoms, a monocyclic hydrocarbon group having 1 to 8 carbon atoms, or a polycyclic hydrocarbon group having 1 to 10 carbon atoms.

6. The resist pattern-forming method according to claim 4 , wherein the repeating unit that includes the group shown by the general formula (2) is derived from a monomer shown by a following general formula (2-1),

wherein each of R 7 , R 8 , and R 9 represents at least one of a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a hydroxymethyl group, a trifluoromethyl group, and a phenyl group, A represents a single bond, an oxygen atom, a carbonyl group, a carbonyloxy group, or an oxycarbonyl group, and B represents a single bond, a saturated chain-like hydrocarbon group having 1 to 20 carbon atoms, a monocyclic hydrocarbon group having 1 to 8 carbon atoms, or a polycyclic hydrocarbon group having 1 to 10 carbon atoms.

7. The resist pattern-forming method according to claim 4 , wherein the fluorine-containing resin further includes at least one of a repeating unit that includes a carboxyl group and a repeating unit that includes a sulfonic acid group.

8. The resist pattern-forming method according to claim 3 , wherein the fluorine-containing resin comprises at least one of a repeating unit that includes a group shown by a following general formula (1) and a repeating unit that includes a group shown by a following general formula (2),

wherein each of R 1 and R 2 represents at least one of a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and a fluoroalkyl group having 1 to 4 carbon atoms wherein at least one of R 1 and R 2 represents a fluoroalkyl group having 1 to 4 carbon atoms, and R 3 represents a linear or branched alkyl group having 1 to 10 carbon atoms wherein at least one hydrogen atom is substituted with a fluorine atom.

9. The resist pattern-forming method according to claim 5 , wherein the fluorine-containing resin further includes at least one of a repeating unit that includes a carboxyl group and a repeating unit that includes a sulfonic acid group.

10. The resist pattern-forming method according to claim 6 , wherein the fluorine-containing resin further includes at least one of a repeating unit that includes a carboxyl group and a repeating unit that includes a sulfonic acid group.

11. The resist pattern-forming method according to claim 8 , wherein the fluorine-containing resin further includes at least one of a repeating unit that includes a carboxyl group and a repeating unit that includes a sulfonic acid group.