Solid-state imaging device and method for producing the same
A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
1. A solid-state imaging device comprising:
a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion, the first substrate having oppositely facing front and back sides, the front side being a light incident side via which light enters the first substrate, the wiring portion being between the light-sensing portion and the front side;
an optically transparent second substrate provided over the front side of the first substrate with a space between them;
a through-hole provided in the first substrate;
a through-via provided in the through-hole;
a front-surface-side electrode provided on the front side of the first substrate and connected to the through-via in the through-hole, the through-hole extending to the front-surface-side electrode;
a back-surface-side electrode connected to the through-via and provided on the back side of the first substrate; and
a stopper electrode provided on the front-surface-side electrode and configured to function as a stopper when the through-hole is formed in the first substrate using energy beam processing, the stopper electrode filling a space between the front-surface-side electrode and the second substrate and a space between the through-via and the second substrate.
2. The solid-state imaging device according to claim 1 , further comprising:
a color filter layer;
a microlens, the color filter layer and the microlens being on the front side of the first substrate; and
an optically transparent protective layer covering the microlens.
3. The solid-state imaging device of claim 1 , wherein the energy beam processing is laser drilling.
4. The solid-state imaging device of claim 1 , wherein a thickness of the stopper electrode is such that the stopper electrode functions as the stopper when the through-hole is formed in the first substrate using the energy beam processing.
5. The solid-state imaging device of claim 1 , wherein the stopper electrode has a given thickness for a certain intensity of the energy beam processing.