Method of manufacturing semiconductor device
Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.
1. A method of manufacturing a semiconductor device, the method comprising:
preparing a semiconductor substrate on which a lower interconnection is formed;
removing a natural oxide layer from the lower interconnection by using a first source in conjunction with generating a plasma;
forming a liner on the semiconductor substrate including on the lower interconnection by using the first source and a second source, wherein the first source is different from the second source;
forming a silicide layer on the lower interconnection under the liner by using the second source;
after forming the silicide layer, nitriding the silicide layer by using the first source and stopping supply of the second source; and
after nitriding the silicide layer, depositing a thin layer by using the first and second sources.
2. The method of claim 1 , wherein a purge gas is supplied at the same time when the first source is supplied or after a predetermined delay time.
3. The method of claim 2 , wherein the purge gas is supplied at a constant flow rate or a gradually increasing flow rate.
4. The method of claim 1 , wherein the liner and the thin layer are formed of the same material.
5. The method of claim 1 , wherein each of the liner and the thin layer has properties varying according to a ratio of the first and second sources.
6. The method of claim 1 , wherein the forming of the liner, the nitriding of the silicide layer, and the depositing of the thin layer are performed by generating plasma.
7. The method of claim 6 , wherein the forming of the silicide layer is performed without generating plasma.
8. The method of claim 7 , wherein the removing of the natural oxide, the forming of the liner, the forming of the silicide layer, the nitriding of the silicide layer, and the depositing of the thin layer are performed in situ.
9. The method of claim 1 , wherein the first source is a nitride containing gas and the second source is a silicon containing gas.