Data processing having multiple low power modes and method therefor
View Patent ↗A method is provided for operating a data processing system having a memory. The memory is coupled between a first power supply voltage terminal for receiving a first variable potential and a second power supply voltage terminal for receiving a second variable potential. An initial difference between the first variable potential and the second variable potential is not less than a first voltage. The method comprises: receiving a command to transition the data processing system from a first power supply voltage to a second power supply voltage; changing the second variable potential so that a difference between the second variable potential and the first variable potential is greater than the first voltage; and after changing the second variable potential, changing the first variable potential, wherein a difference between the first variable potential and the second variable potential is not less than the first voltage.
1. A method for operating a data processing system having a memory, the memory coupled between a first power supply voltage terminal and a second power supply voltage terminal, the first power supply voltage terminal for receiving a first variable potential and the second power supply voltage terminal for receiving a second variable potential, wherein an initial difference between the first variable potential and the second variable potential is not less than a first voltage, the method comprising:
receiving a command to transition the data processing system from a first power supply voltage to a second power supply voltage;
changing the second variable potential so that a difference between the second variable potential and the first variable potential is greater than the first voltage; and
after changing the second variable potential, changing the first variable potential, wherein a difference between the first variable potential and the second variable potential is not less than the first voltage.
2. The method of claim 1 , further comprising determining that a plurality of memory cells in the memory can retain a predetermined logic state at a lower power supply voltage before changing the second variable potential.
3. The method of claim 1 , wherein the first voltage is not less than a minimum data retention voltage of the memory.
4. The method of claim 1 , wherein the first power supply voltage is greater than the second power supply voltage, wherein changing the second variable potential further comprises decreasing the second variable potential; and wherein changing the first variable potential further comprises decreasing the first variable potential.
5. The method of claim 4 , further comprising:
receiving a command to transition the data processing system from the second power supply voltage to the first power supply voltage;
increasing the first variable potential; and
after increasing the first variable potential, increasing the second variable potential.
6. The method of claim 4 , further comprising:
prior to decreasing the second variable potential, determining that the memory will not be accessible after the transition;
flushing modified data from the memory to a second memory; and
performing coherency operations on the memory.
7. The method of claim 1 , wherein the memory is characterized as being a static random access memory.
8. The method of claim 1 , further comprising selecting the first variable potential and the second variable potential from a look-up table.
9. In a data processing system having a processor and a memory, the processor coupled between a first power supply voltage terminal and a second power supply voltage terminal, the processor for receiving a first power supply voltage, and the memory coupled between the first power supply voltage terminal and a third power supply voltage terminal, the memory for receiving a second power supply voltage, a method comprising:
receiving a command to lower the first and the second power supply voltages;
determining that the memory can retain a stored logic state at the lower second power supply voltage;
decreasing a potential at the third power supply voltage terminal; and
decreasing a potential at the first power supply voltage terminal after decreasing the potential at the third power supply voltage terminal.
10. The method of claim 9 , further comprising:
receiving a command to increase the first and second power supply voltages;
increasing a potential at the first power supply voltage terminal; and
increasing a potential at the third power supply voltage terminal after increasing the potential at the first power supply voltage terminal.
11. The method of claim 9 , further comprising:
prior to decreasing the potential at the third power supply voltage terminal, determining that the memory will not be accessible at the lower second power supply voltage;
flushing modified data from the memory to a second memory; and
performing coherency operations on the second memory.
12. The method of claim 9 , further comprising selecting the first and second power supply voltages from a look-up table.
13. The method of claim 9 , wherein decreasing a potential at the third power supply voltage terminal and decreasing a potential at the first power supply voltage terminal further comprises decreasing the potentials at both the first and the third power supply voltage terminal substantially equally.
14. The method of claim 9 , wherein the memory is characterized as being a static random access memory.
15. The method of claim 9 , wherein the second power supply voltage is not less than a minimum data retention voltage of the memory.
16. A data processing system comprising:
a first power supply terminal;
a second power supply terminal;
a first voltage regulator coupled to the first power supply terminal for receiving a first power supply voltage, and for providing a first regulated power supply voltage having a plurality of first predetermined voltage levels;
a second voltage regulator coupled to the second power supply voltage terminal, for providing a second regulated power supply voltage having a plurality of second predetermined voltage levels;
a memory coupled to the first and second power supply voltage terminals; and
a power management unit coupled to the first and second voltage regulators, the power management unit for selecting one of the plurality of first predetermined voltage levels and for selecting one of the plurality of second predetermined voltage levels, wherein in response to a command to transition the memory to a different power supply voltage, the power management unit selecting one of the plurality of second predetermined voltage levels before selecting one of the plurality of first predetermined voltage levels.
17. The data processing system of claim 16 , wherein the plurality of first predetermined voltage levels and the plurality of second predetermined voltage levels are stored as a look-up table.
18. The data processing system of claim 16 , wherein each of the first predetermined voltage levels is greater than each of the second predetermined voltage levels.
19. The data processing system of claim 16 , further comprising a processor coupled to the first power supply voltage terminal and to a third power supply voltage terminal, wherein in the third power supply voltage terminal is at ground potential.
20. The data processing system of claim 16 , wherein the memory comprises a plurality of static random access memory cells, and wherein each of the plurality of memory cells is coupled to the first and second power supply voltage terminals.