Method of manufacturing a semiconductor device
A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
1. A method of manufacturing a semiconductor device, comprising:
forming a first amorphous insulating film comprising one of hafnium and zirconium on a substrate;
adding aluminum to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and
annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film including one of a tetragonal hafnium aluminate film and a tetragonal zirconium aluminate film by changing a phase of the second amorphous insulating film,
wherein a concentration of the aluminum added to the first amorphous insulating film is controlled according to the annealing temperature such that the third insulating film has an aluminum concentration of 1% to 10% when the annealing temperature is 600° C.
2. A method of manufacturing a semiconductor device, comprising:
forming a first amorphous insulating film comprising one of hafnium and zirconium on a substrate;
adding aluminum to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and
annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film including one of a tetragonal hafnium aluminate film and a tetragonal zirconium aluminate film by changing a phase of the second amorphous insulating film,
wherein a concentration of the aluminum added to the first amorphous insulating film is controlled according to the annealing temperature such that the third insulating film has an aluminum concentration of 16% or higher when the annealing temperature is 700° C.