Method for forming a capped micro-electro-mechanical system (MEMS) device
View Patent ↗A capped micro-electro-mechanical systems (MEMS) device is formed using a device wafer and a cap wafer. The MEMS device is located on a frontside of the device wafer. A frontside of a cap wafer is attached to the frontside of the device wafer. A first stressor layer having a tensile stress is applied to a backside of the cap wafer after attaching the frontside of the cap wafer to the frontside of the device wafer. The first stressor layer and the cap wafer are patterned to form an opening through the first stressor layer and the cap wafer after applying the first stressor layer. A conductive layer is applied to the backside of the cap wafer, including through the opening to the frontside of the device wafer.
1. A method of making a capped micro-electro-mechanical systems device, comprise:
forming a MEMS device using a device wafer, wherein the MEMS device is located on a frontside of the device wafer;
attaching a frontside of a cap wafer to the frontside of the device wafer;
applying a first stressor layer having a tensile stress to a backside of the cap wafer after attaching the frontside of the cap wafer to the frontside of the device wafer;
patterning the first stressor layer and the cap wafer to form an opening through the first stressor layer and the cap wafer after applying the first stressor layer; and
applying a conductive layer to the backside of the cap wafer, including through the opening to the frontside of the device wafer.
2. The method of claim 1 , further comprising:
applying a second stressor layer having a compressive stress to the frontside of the cap wafer prior to the step of attaching.
3. The method of claim 2 , further comprising performing chemical mechanical polishing to the backside of the cap wafer prior after the step of attaching and before the step of applying the first stressor layer.
4. The method of claim 3 , wherein the step of applying the first stressor layer comprises depositing a first layer of aluminum.
5. The method of claim 4 , wherein the step of applying the second stressor layer comprises depositing a layer of nitride.
6. The method of claim 5 , further comprising performing chemical mechanical polishing to the backside of the device wafer after the step of attaching.
7. The method of claim 6 , wherein the step of applying a conductive layer comprises depositing a second layer of aluminum.
8. The method of claim 7 , wherein the step of attaching comprises:
applying frit to the frontside of the cap wafer;
curing the frit; and
contacting the frontside of the device wafer to the frit.
9. The method of claim 1 , wherein the step of applying the first stressor layer comprises depositing a first layer of aluminum.
10. The method of claim 9 , wherein the step of applying a conductive layer comprises depositing a second layer of aluminum.
11. The method of claim 10 , further comprising:
forming a bond pad opening in the cap wafer to expose a plurality of bond pads of the MEMS device.
12. A method of forming a packaged micro-electro-mechanical systems (MEMS) device, wherein the MEMS device is located on a frontside of a device wafer, comprising:
forming a nitride layer having compressive stress on a frontside of a cap wafer;
attaching the frontside of the cap wafer to the frontside of the device wafer;
forming a first aluminum layer having tensile stress on the backside of the cap wafer;
patterning the first aluminum layer and the cap wafer to form an opening through the cap wafer; and
applying a conductive layer to the backside of the cap wafer, including through the opening to the frontside of the device wafer.
13. The method of claim 12 , further comprising performing chemical mechanical polishing on the backside of the cap wafer after the step of attaching and before the step of forming the first aluminum layer.
14. The method of claim 13 , further comprising performing chemical mechanical polishing on the backside of the device wafer after the step of attaching.
15. The method of claim 12 , wherein the step of applying the conductive layer comprises depositing a second aluminum layer and is further characterized as contacting a ground contact on the device wafer.
16. The method of claim 12 , wherein the step of attaching comprises:
applying frit in a pattern to the frontside of the cap wafer;
curing the frit; and
contacting the frontside of the device wafer to the frontside of the cap wafer.
17. A method of packaging a micro-electro-mechanical systems (MEMS) device, comprising:
forming the MEMS device on a frontside of a device wafer;
attaching a frontside of a cap wafer to the frontside of the device wafer;
performing chemical mechanical polishing on the backside of the cap wafer;
depositing a first layer of aluminum on the backside of the cap wafer, the first layer of aluminum having tensile stress;
forming an opening in the first layer of aluminum and the cap wafer; and
depositing a conductive layer on the first layer of aluminum and through the opening to contact the frontside of the device wafer.
18. The method of claim 17 , further comprising performing chemical mechanical polishing on a backside of the device wafer after the step of attaching.
19. The method of claim 18 , further comprising depositing nitride having compressive stress on the frontside of the cap wafer prior to the step of attaching.
20. The method of claim 19 , wherein the step of depositing a conductive layer comprises depositing a second layer of aluminum.