MANAGED HYBRID MEMORY WITH ADAPTIVE POWER SUPPLY
Subject matter disclosed herein relates to a memory device, and more particularly to a managed hybrid memory that includes a power supply.
1 . A managed hybrid memory device comprising:
a first memory device comprising a first memory technology;
a second memory device comprising a second memory technology different from said first memory technology; and
a voltage converter to provide a first voltage to said first memory device and a second voltage to said second memory device, wherein said second voltage is different from said first voltage.
2 . The managed hybrid memory device of claim 1 , further comprising:
a memory controller adapted to manage said first and second memory devices.
3 . The managed hybrid memory device of claim 1 , further comprising:
an input port to provide an external signal comprising a single DC voltage to said voltage converter.
4 . The managed hybrid memory device of claim 1 , wherein said voltage converter comprises a step-up converter or a step-down converter.
5 . The managed hybrid memory device of claim 1 , wherein said voltage converter comprises a step-up converter and a step-down converter.
6 . The managed hybrid memory device of claim 1 , wherein said voltage converter exists in said memory controller.
7 . The managed hybrid memory device of claim 1 , wherein said first memory device comprises a phase change memory and said second memory device comprises a NAND memory.
8 . A method comprising:
managing two or more memory technologies in a single integrated circuit package;
converting a first voltage to a second voltage; and
providing said first voltage to a first memory device and said second voltage to a second memory device, wherein said first memory device comprises a memory technology different from that of said second memory device, and wherein said first voltage is different from said second voltage.
9 . The method of claim 8 , wherein said managing is performed from within said single integrated circuit package.
10 . The method of claim 8 , further comprising:
receiving an external signal having said first voltage; and
providing said external signal to a voltage converter that exists in said single integrated circuit package.
11 . The method of claim 8 , wherein said single integrated circuit package comprises a managed hybrid memory.
12 . The method of claim 8 , wherein said second voltage is greater than said first voltage.
13 . The method of claim 8 , wherein said first memory device comprises a phase change memory and said second memory device comprises a NAND memory.
14 . A system comprising:
a managed hybrid memory device comprising:
a first memory device comprising a first memory technology;
a second memory device comprising a second memory technology different from said first memory technology; and
a voltage converter to provide a first voltage to said first memory device and a second voltage to said second memory device, wherein said second voltage is different from said first voltage; and
a processor to host one or more applications and to initiate read and/or write operations to provide access to said first memory device and said second memory device.
15 . The system of claim 14 , further comprising:
a memory controller adapted to manage said first and second memory devices and to perform said read and/or write operations.
16 . The system of claim 14 , further comprising:
an input port to provide an external signal comprising a single DC voltage to said voltage converter.
17 . The system of claim 14 , wherein said voltage converter comprises a step-up converter or a step-down converter.
18 . The system of claim 14 , wherein said voltage converter comprises a step-up converter and a step-down converter.
19 . The system of claim 14 , wherein said voltage converter exists in said memory controller.
20 . The system of claim 14 , wherein said first memory device comprises a phase change memory and said second memory device comprises a NAND memory.