Semiconductor device and manufacturing method thereof
View Patent ↗A first insulating film includes five extension lines formed between connection pad portions of adjacent two predetermined wiring lines. The first insulating film also includes peripheral portions of the adjacent two connection pad portions on both sides of the five extension lines. A second insulating film made of a polyimide resin or the like is formed on the upper surface of the first insulating layer by a screen printing method or ink jet method. Since a short circuit may be easily caused by electromigration in a region where the five extension lines are parallel to another, the short circuit due to the electromigration can be prevented by covering only that region with the second insulating film. Accordingly, the region where the second insulating film is formed can be as small as possible, and the semiconductor wafer does not easily warp.
1. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film provided on the semiconductor substrate;
a lower wiring line provided on the first insulating film;
a second insulating film provided on a part of the first insulating film including the entire lower wiring line; and
a plurality of wiring lines provided on the first insulating film and the second insulating film,
wherein the lower wiring line is configured by a spiral thin film inductive element, and an end of one of the wiring lines and an end of another of the wiring lines are connected to an outer end and an inner end of the thin film inductive element via openings provided in the second insulating film, respectively.
2. The semiconductor device according to claim 1 , wherein:
a columnar electrode is provided on a connection pad portion of at least one of the wiring lines, and
a sealing film is provided around the columnar electrode.
3. The semiconductor device according to claim 1 , wherein the second insulating film is made of a polyimide resin.
4. A semiconductor device comprising:
a first insulating film;
a plurality of wiring lines provided on the first insulating film, each of the wiring lines including a connection pad portion and an extension line; and
a second insulating film provided on a part of the first insulating film including the wiring lines,
wherein at least a part in which a distance between the extension lines arranged between adjacent connection pad portions is smallest is covered with the second insulating film, which is belt-shaped and linear when viewed from above.
5. The semiconductor device according to claim 4 , wherein:
the first insulating film is provided on a semiconductor substrate, and
the connection pad portions are arranged in matrix form, and the extension lines of the wiring lines including the connection pad portions that are disposed on an inner side extend parallel to one another between the connection pad portions of two adjacent wiring lines that are disposed on an outermost peripheral side.
6. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film provided on the semiconductor substrate;
a lower wiring line provided on the first insulating film;
a second insulating film provided on a part of the first insulating film including the entire lower wiring line; and
a plurality of wiring lines provided on the first insulating film and the second insulating film,
wherein the lower wiring line includes one end on a first side and a plurality of ends on a second side which are all are connected to the end on the first side, and
wherein an end of one of the wiring lines and ends of others of the wiring lines are connected to the one end on the first side and the ends on the second side of the lower wiring line via openings provided in the second insulating film, respectively.
7. The semiconductor device according to claim 6 , wherein at least one of the wiring lines provided on the second insulating film is disposed to intersect with the lower wiring line.
8. A manufacturing method of a semiconductor device comprising:
forming a first insulating film on a semiconductor wafer;
forming a lower wiring line on the first insulating film;
forming a second insulating film on a part of the first insulating film including the entire lower wiring line;
forming a plurality of wiring lines on the first insulating film and the second insulating film; and
cutting at least the semiconductor to obtain a plurality of semiconductor devices,
wherein the lower wiring line is configured by a spiral thin film inductive element, and an end of one of the wiring lines and an end of another of the wiring lines are connected to an outer end and an inner end of the thin film inductive element via openings formed in the second insulating film, respectively.
9. The method according to claim 8 , wherein the second insulating film is formed by a polyimide resin.
10. The method according to claim 8 , wherein the second insulating film is formed by an ink jet method or a screen printing method.
11. The method according to claim 10 , further comprising:
forming a columnar electrode on a connection pad portion of at least one of the wiring lines; and
forming a sealing film around the columnar electrode.