CCD image sensor
View Patent ↗A CCD image sensor includes a photo-diode region segmented by an element separation region; and a CCD register connected with the photo-diode region through a transfer gate. The photo-diode region includes a plurality of tapered portions, and each of the plurality of tapered portions is formed to become wider in a direction of the transfer gate.
1. A CCD image sensor comprising:
a photo-diode region surrounded by an element separation region,
the photo-diode region comprised of plural tapered portions;
a CCD register; and
a single transfer gate,
wherein the CCD register is connected with said plural tapered portions through the single transfer gate, and
wherein each of said plural tapered portions is formed to become wider in a direction of said single transfer gate.
2. The CCD image sensor according to claim 1 , wherein said plural tapered portions are formed to have an identical shape.
3. The CCD image sensor according to claim 1 , wherein each of said plural tapered portions has a width equal to or less than 10μm on a side of said single transfer gate.
4. The CCD image sensor according to claim 1 , wherein said plural tapered portions are arranged in parallel to each other in a width direction of said photo-diode region.
5. The CCD image sensor according to claim 1 , wherein said plural tapered portions are arranged in a width direction of said photo-diode region to provide a narrow channel effect.
6. A CCD image sensor comprising:
a pixel comprised of a photo-diode region, the photo-diode region comprised of plural tapered portions and plural tapered implantation regions, the tapered implantation regions having an impurity level higher than an impurity level of the plural tapered portions;
an element separation region, the plural tapered portions and the plural tapered implantation regions of the photo-diode region surrounded by the element separation region;
a CCD register; and
a single transfer gate associated with the photo-diode region, wherein the CCD register is connected with said plural tapered portions of the photo-diode region through the associated single transfer gate, and wherein each of said plural tapered portions is formed to become wider in a direction of said transfer gate.
7. The CCD image sensor according to claim 6 , wherein said plural tapered portions are formed to have an identical shape.
8. The CCD image sensor according to claim 6 , wherein each of said plural tapered portions has a width equal to or less than 10 pm on a side of said single transfer gate.
9. The CCD image sensor according to claim 6 , wherein said plural tapered portions are arranged in parallel to each other in a width direction of said photo-diode region.
10. The CCD image sensor according to claim 6 , wherein said plural tapered portions are arranged in a width direction of said photo-diode region to provide a narrow channel effect.
11. The CCD image sensor according to claim 6 , wherein one of said tapered implantation regions is located adjacent each tapered side of each said tapered region.
12. The CCD image sensor according to claim 6 , wherein end portions of said transfer gate are surrounded by the element separation region.