IP Library Granted Patent US 8,487,392
Granted Patent B2
US 8,487,392 · App. 12/851,555 · Granted Jul 16, 2013

High power density betavoltaic battery

Inventors: Michael Spencer (Ithaca, NY); MVS Chandrashekhar (Columbia, SC)
Assignee: Widetronix, Inc.
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Quick Facts
Patent No.
US 8,487,392
App. No.
12/851,555
Granted
Jul 16, 2013
Kind
B2
Abstract

To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given.

Claims (21)

1. A betavoltaic battery device, comprising:

a lid to battery case;

wherein said lid comprises a positive post, a negative post, and a case isolation strip;

wherein said case isolation strip is located between said positive post and said negative post;

a first layer;

wherein said lid is located on top of said first layer;

said first layer comprises a central isotope layer, a first isolation strip, a first metal contact strip, and a second metal contact strip;

said central isotope layer is encircled partially by said first isolation strip and said first metal contact strip;

said first isolation strip is encircled partially by said second metal contact strip;

said first isolation strip is located between said second metal contact strip and said first metal contact strip;

a second layer;

said first layer is located on top of said second layer;

said second layer comprises a central SiC betavoltaic layer, an ohmic contact strip, a second isolation strip, a third metal contact strip, and a fourth metal contact strip;

said central SiC betavoltaic layer is encircled by said ohmic contact strip;

said ohmic contact strip is encircled by said second isolation strip;

said second isolation strip is encircled partially by said third metal contact strip, and said fourth metal contact strip;

a third layer;

said second layer is located on top of said third layer;

said third layer comprises a third isolation strip, a fifth metal contact strip, and a sixth metal contact strip; and

said third isolation strip is encircled partially by said fifth metal contact strip and said sixth metal contact strip.

2. The betavoltaic battery device as recited in claim 1 , wherein said central isotope layer comprises one or more of following: radioisotope tritium, Nickel-63, Phosphorus-33, or Promethium.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Jan 20, 2026
From: YOUNG, JOHN F.; BARNETT, SUSAN M.; F.J. YOUNG COMPANY
To: WIDETRONIX INC.
Reel/Frame 073512/0684 →
SECURITY INTEREST Recorded Apr 16, 2015
From: WIDETRONIX INC.
To: YOUNG, JOHN F.; BARNETT, SUSAN M.; F.J. YOUNG COMPANY
Reel/Frame 035428/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2011
From: CHANDRASHEKHAR, MVS; SPENCER, MICHAEL
To: WIDETRONIX INC
Reel/Frame 026676/0673 →
Continuity (4)
Provisional Application 61231863 · Aug 6, 2009
Provisional Application 61306541 · Feb 21, 2010
Related Publication 20110031572A1 · Feb 10, 2011
Related Publication 20110298071A9 · Dec 8, 2011