Synchronized radio frequency pulsing for plasma etching

1. A method of etching a dielectric layer on a substrate, comprising:

generating a plasma by pulsing a first RF source signal having a first duty cycle;

applying a second RF bias signal having a second duty cycle to the plasma, wherein an RF frequency of the first RF signal is about 162 MHz and an RF frequency of the second RF signal is about 13.56 MHz or about 60 MHz, or wherein an RF frequency of the first RF signal is about 60 MHz and an RF frequency of the second RF signal is about 13.56 MHz;

applying a third RF bias signal having a third duty cycle and an RF frequency of about 2 MHz to the plasma, wherein the first, second, and third signals are synchronized;

adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and

etching the dielectric layer with the plasma.

2. The method of claim 1 , wherein adjusting the phase variance further comprises:

providing at least one of second or third RF bias signals having a phase lag relative to the first RF source signal to reduce plasma ion density non-uniformity relative to in-phase RF signals.

3. The method of claim 1 , wherein adjusting the phase variance further comprises:

providing at least one of second or third RF bias signals having a phase lag relative to the first RF source signal to reduce plasma ion energy relative to in-phase RF signals.

4. The method of claim 1 , wherein adjusting the phase variance further comprises:

providing at least one of second or third RF bias signals having a phase lag relative to the first RF source signal to reduce charge build-up on the dielectric layer relative to in-phase RF signals.

5. The method of claim 1 , further comprising:

increasing the first duty cycle relative to at least one of the second or third duty cycles to form a center high plasma ion density distribution.

6. The method of claim 1 , further comprising:

decreasing the first duty cycle relative to at least one of the second or third duty cycles to form an edge high plasma ion density distribution.

7. The method of claim 1 , wherein an RF frequency of the first RF signal is about 162 MHz, an RF frequency of the second RF signal is about 13.56 MHz, and an RF frequency of the third RF signal is about 2 MHz.

8. The method of claim 1 , wherein an RF frequency of the first RF signal is about 60 MHz, an RF frequency of the second RF signal is about 13.56 MHz, and an RF frequency of the third RF signal is about 2 MHz.

9. The method of claim 1 , wherein an RF frequency of the first RF signal is about 162 MHz, an RF frequency of the second RF signal is about 60 MHz, and an RF frequency of the third RF signal is about 2 MHz.

10. The method of claim 1 , wherein a pulse frequency of each of the first, second, and third RF signals is between about 0.1 KHz to about 20 KHz and wherein the pulse frequency is the same for each RF signal.

11. The method of claim 1 , wherein the duty cycle of each signal can be varied independently between about 10% to about 90%.

12. The method of claim 1 , wherein the first, second, and third duty cycles are the same.

13. The method of claim 1 , wherein the substrate is disposed in a capacitively coupled plasma etching reactor having the first RF source signal coupled to an upper electrode and the second and third RF bias signals are coupled to a lower electrode disposed in a substrate support of the reactor.

14. The method of claim 1 , wherein the second and third RF bias signals have a total power of about 2000 W or more and wherein the first RF source signal has a power of about 500 W or less.

15. The method of claim 1 , wherein at least one of a DC bias, a V RF , or a plasma sheath voltage is greater than or equal to about 1000 V.

16. The method of claim 1 , further comprising:

applying a pulsed DC signal which is synchronized with the first RF source signal.

17. The method of claim 16 , wherein the pulsed DC signal is in-phase with the first RF source signal.

18. A method of etching a dielectric layer on a substrate disposed on a substrate support of a capacitively coupled plasma etching reactor having an upper electrode disposed above the substrate and a lower electrode disposed in the substrate support, comprising:

generating a plasma to etch the dielectric layer by pulsing a first RF source signal coupled to the upper electrode, the first RF source signal having a first duty cycle;

applying a second RF bias signal having a second duty cycle to the lower electrode, wherein an RF frequency of the first RF signal is about 162 MHz and an RF frequency of the second RF signal is about 13.56 MHz or about 60 MHz, or wherein an RF frequency of the first RF signal is about 60 MHz and an RF frequency of the second RF signal is about 13.56 MHz;

applying a third RF bias signal having a third duty cycle and an RF frequency of about 2 MHz to the lower electrode, wherein the first, second, and third signals have a common pulse frequency; and

adjusting at least one of a phase variance or a duty cycle of the first RF source signal with respect to at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity, charge build-up on the dielectric layer, or etch rate of the dielectric layer.

19. The method of claim 18 , wherein the second and third RF bias signals have a total power of about 2000 W or more and wherein the first RF source signal has a power of about 500 W or less.

20. The method of claim 18 , wherein at least one of a DC bias, a V RF , or a plasma sheath voltage is greater than or equal to about 1000 V.