IP Library Granted Patent US 8,262,801
Granted Patent B2
US 8,262,801 · App. 12/854,435 · Granted Sep 11, 2012

Vacuum processing method

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Quick Facts
Patent No.
US 8,262,801
App. No.
12/854,435
Granted
Sep 11, 2012
Kind
B2
Abstract

A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.

Claims (12)

1. A vacuum processing method using a vacuum processing apparatus comprising a processing chamber disposed inside a vacuum reactor and having plasma formed therein; a sample stage arranged at a lower portion within the processing chamber and having a sample to be processed placed on an upper plane thereof; and a gas introduction mechanism positioned at an upper portion of the processing chamber and having introduction holes for introducing processing gas into the processing chamber; a means for carrying a dummy sample onto the sample stage within the vacuum reactor and placing the dummy sample on the sample stage; an electrostatic chuck means for fixing the sample to be processed on the sample stage; a means for introducing a thermal conductance gas between the sample stage and the sample to be processed for controlling the temperature of the sample to be processed; a means for introducing a dust removal gas between the sample stage and the dummy sample; and a means for switching between introducing thermal conductance gas and introducing dust removal gas;

the vacuum processing method comprising:

placing a dummy sample on the sample stage;

fixing the dummy sample to the sample stage via the electrostatic chuck;

introducing dust removal gas between the sample stage and the dummy sample; and

removing particles attached to the sample stage via the flow of dust removal gas.

2. The vacuum processing method according to claim 1 , wherein

the electrostatic chuck means of the sample stage is a dipole system.

3. The vacuum processing method according to claim 1 , wherein

a surface of the dummy sample facing the sample stage has a protruded portion, wherein when the protruded portion of the dummy sample is retained on the sample stage via electrostatic chuck, the protruded portion defines a flow path of dust removal gas introduced from the sample stage.

4. The vacuum processing method according to claim 1 , wherein

after removing particles attached to the surface of the sample stage by supplying dust removal gas between the dummy sample and the sample stage, the particles attached to the dummy sample are removed from the processing chamber by carrying out the dummy sample.

Assignments (1)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →