Through hole electrode substrate with different area weighted average crystal grain diameter of metal in the conductive part and semiconductor device using the through hole electrode substrate
To provide a through hole electrode substrate and a semiconductor device which uses the through hole electrode substrate which have improved electrical properties in a conductive part which passes through the front and back of a substrate, a through hole electrode substrate 100 of the invention comprises a substrate 102 having a through hole 104 which passes through the front and back of the substrate 102 , and a conductive part 106 including a metal material which is filled into the through hole 104 , the conductive part 106 including at least a metal material having an area weighted average crystal grain diameter of 13 μm or more. The conduction part 106 also includes a metal material having a crystal grain diameter of 29 μm or more. Further one end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of less than 13 μm, and the other end of the conductive part includes at least a metal material having an area weighted average crystal grain diameter of 13 μm or more.
1. A through hole electrode substrate comprising:
a substrate having a through hole which passes through the front and back of the substrate; and
a conductive part including a metal material which is filled into the through hole; and
the conductive part including at least a metal material having an area weighted average crystal grain diameter of 13 μm or more,
wherein one end of the conductive part includes at least a metal material having a larger area weighted average crystal grain diameter than the other end of the conductive part.
2. The through hole electrode substrate according to claim 1 , wherein the conduction part includes at least a metal material having a crystal grain diameter of 29 μm or more.
3. The through hole electrode substrate according to claim 1 , wherein the substrate is formed from silicon and the conductive part is formed above an insulation layer arranged on at least the substrate side.
4. The through hole electrode substrate according to claim 1 , wherein an aperture diameter of the through hole is 10 μm to 100 μm, and a thickness of the substrate is 20 μm to 100 μm.
5. The through hole according to claim 1 , wherein an aperture diameter of the through hole is 10 μm to 100 μm and a thickness of the substrate is 300 μm to 800 μm.
6. A semiconductor device comprising:
a plurality of through hole electrode substrates according to claim 1 , the plurality of through hole electrode substrates being stacked.
7. A semiconductor device according to claim 6 , wherein the conduction part includes at least a metal material having a crystal grain diameter of 29 μm or more.
8. A semiconductor device according to claim 6 , the substrate is formed from silicon and the conductive part is formed above an insulation layer arranged on at least the substrate side.
9. A semiconductor device according to claim 6 , wherein an aperture diameter of the through hole is 10 μm to 100 μm, and a thickness of the substrate is 20 μm to 100 μm.
10. A semiconductor device according to claim 6 , wherein an aperture diameter of the through hole is 10 μm to 100 μm and a thickness of the substrate is 300 μm to 800 μm.
11. A semiconductor device comprising:
at least one semiconductor chip arranged with a connection terminal part,
wherein the semiconductor device is formed by connecting the connection terminal part and a conductive part of the through hole electrode substrate according to claim 1 .
12. A semiconductor device according to claim 11 , wherein the conduction part includes at least a metal material having a crystal grain diameter of 29 μm or more.
13. A semiconductor device according to claim 11 , the substrate is formed from silicon and the conductive part is formed above an insulation layer arranged on at least the substrate side.
14. A semiconductor device according to claim 11 , wherein an aperture diameter of the through hole is 10 μm to 100 μm, and a thickness of the substrate is 20 μm to 100 μm.
15. A semiconductor device according to claim 11 , wherein an aperture diameter of the through hole is 10 μm to 100 μm and a thickness of the substrate is 300 μm to 800 μm.
16. A semiconductor device according to claim 11 , comprising:
a plurality of the through hole electrode substrates, the plurality of through hole electrode substrates being stacked.
17. A semiconductor device according to claim 16 , wherein the conduction part includes at least a metal material having a crystal grain diameter of 29 μm or more.
18. A semiconductor device according to claim 16 , the substrate is formed from silicon and the conductive part is formed above an insulation layer arranged on at least the substrate side.
19. A semiconductor device according to claim 16 , wherein an aperture diameter of the through hole is 10 μm to 100 μm, and a thickness of the substrate is 20 μm to 100 μm.
20. A semiconductor device according to claim 16 , wherein an aperture diameter of the through hole is 10 μm to 100 μm and a thickness of the substrate is 300 μm to 800 μm.