High-voltage transistor architectures, processes of forming same, and systems containing same

1. A device, comprising:

a channel in a semiconductive substrate;

a gate electrode disposed above the channel;

a source implant on a first side of the gate electrode and a drain implant on a second side of the gate electrode;

a drain well in the semiconductive substrate that forms a junction with the channel;

a salicide source contact pad in the semiconductive substrate;

a salicide drain contact pad in the drain well, wherein the salicide drain contact pad is located farther from the second side than the source contact pad is located from the first side; and

an interlayer dielectric layer (ILD0) disposed above and on the salicide drain contact pad and the drain well.

2. The device of claim 1 , wherein resistance between the drain implant the channel is greater than resistance between the source implant and the channel.

3. The device of claim 1 , wherein resistivity between the drain implant and the channel is greater than resistivity between the source implant and the channel.

4. The device of claim 1 , wherein the gate electrode is a high-K metal gate electrode, the device further including an oxide dielectric disposed on the channel, and wherein a high-K dielectric is disposed between the oxide dielectric and the gate electrode.

5. The device of claim 1 , further including a source contact that penetrates the ILD0.

6. The device of claim 1 , further including:

a source contact that penetrates the ILD0 and that contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and that contacts the salicide drain contact pad, and wherein the ILD0 also is disposed above and on the salicide source contact pad.

7. The device of claim 1 , wherein the gate electrode is part of a gate, further including:

a source contact that penetrates the ILD0 and that contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and that contacts the salicide drain contact pad, and wherein the ILD0 also is disposed above and on the gate.

8. The device of claim 1 , wherein the gate electrode is part of a gate, further including:

a source contact that penetrates the ILD0 and that contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and that contacts the salicide drain contact pad, and wherein the ILD0 also is disposed above and on the salicide source contact pad and above and on the gate.

9. The apparatus of claim 1 , further including integral to the substrate:

at least one of:

a first logic transistor that operates at about 0.75-1 Volt (V) and 100 nano Ampere/micrometer (nA/μm);

a second logic transistor that operates at about 0.75-1 Volt V and 1 nA/μm;

an ultra low-power transistor that operates about 0.75-1.2 V and 0.03 nA/μm;

at least one of:

a first high-voltage transistor that operates at about 1.5-1.8 V and 0.1 nA/μm; and

a second high-voltage transistor that operates at about 1.5-3.3 V and 10 pico A/μm or less; and

wherein the drain well exhibits a series resistance from the salicide drain contact to the junction from about 10 V to about 4 V.

10. The device of claim 1 , wherein the device is a first device in a first region of the semiconductive substrate, further including:

a subsequent device in a region separate from the first device, wherein the first device is configured to operate at a voltage higher than the subsequent device and the first device and the subsequent device form an apparatus; and

metallization layers above and coupled to the first device and the subsequent device.

11. The device of claim 1 , wherein the device is a first device in a first region of the semiconductive substrate, further including:

a second device in a second region separate from the first device, wherein the first device is configured to operate at a voltage higher than the second device;

a third device in a third region separate from the first device and from the second device, wherein the first device is configured to operate at a voltage higher than the second device, and wherein the third device is configured to operate at a voltage lower than the second device; and

metallization layers above and coupled to the first device.

12. The device of claim 1 , wherein the device is a first device in a first region of the semiconductive substrate, further including:

a second device in a second region separate from the first device, wherein the first device is configured to operate at a voltage higher than the second device;

a third device in a third region separate from the first device and from the second device, wherein the first device is configured to operate at a voltage higher than the second device, and wherein the third device is configured to operate at a voltage lower than the second device;

a fourth device in a fourth region separate from the first device, from the second device, and from the third device, wherein the first device is configured to operate at a voltage higher than the second device, and wherein the third device is configured to operate at a voltage lower than the second device, wherein the fourth device is configured to operate a voltage lower than the third device; and

metallization layers above and coupled to the first device.

13. The device of claim 1 , wherein the device is a first device in a first region of the semiconductive substrate, further including:

a second device in a second region separate from the first device, wherein the first device is configured to operate at a voltage higher than the second device;

a third device in a third region separate from the first device and from the second device, wherein the first device is configured to operate at a voltage higher than the second device, and wherein the third device is configured to operate at a voltage lower than the second device;

a fourth device in a fourth region separate from the first device, from the second device, and from the third device, wherein the first device is configured to operate at a voltage higher than the second device, and wherein the third device is configured to operate at a voltage lower than the second device, wherein the fourth device is configured to operate a voltage lower than the third device;

a fifth device in a fifth region separate from the first device, from the second device, from the third device, and from the fourth device, wherein the first device is configured to operate at a voltage higher than the second device, and wherein the third device is configured to operate at a voltage lower than the second device, wherein the fourth device is configured to operate a voltage lower than the third device, and wherein the fifth device is configured to operate a voltage lower than the third device; and

metallization layers above and coupled to the first device.

14. A device, comprising:

a P-well channel in a semiconductive substrate;

a high-K metal gate disposed above the P-well channel, wherein the high-K metal gate includes a first side and a second side;

an N+ source implant on the first side and an N+ drain implant on the second side, and wherein the N+ source implant includes an implant finger at the first side;

a N drain well in the semiconductive substrate that forms a junction with the P-well channel;

a salicide source contact pad in the semiconductive substrate;

a salicide drain contact pad in the drain well, wherein the salicide drain contact pad is located farther from the second side than the source contact pad is located from the first side; and

an interlayer dielectric layer (ILD0) disposed above and on the salicide source and drain contact pads, upon the drain well, and upon the high-K metal gate.

15. The device of claim 14 , wherein resistance between the drain implant the channel is greater than resistance between the source implant and the channel.

16. The device of claim 14 , wherein the high-K metal gate has a first lateral dimension between the first side and the second side, wherein the N drain well has a second lateral dimension, and wherein the second lateral dimension is equal to or greater than the first lateral dimension.

17. The device of claim 14 , wherein resistance between the drain implant the channel is greater than resistance between the source implant and the channel, and wherein the high-K metal gate has a first lateral dimension between the first side and the second side, wherein the N drain well has a second lateral dimension, and wherein the second lateral dimension is equal to or greater than the first lateral dimension.

18. The device of claim 14 , further including:

a source contact that penetrates the ILD0 and that contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and that contacts the salicide drain contact pad.

19. The device of claim 14 , wherein resistance between the drain implant and the channel is greater than resistance between the source implant and the channel, and wherein the high-K metal gate has a first lateral dimension between the first side and the second side, wherein the N drain well has a second lateral dimension, and wherein the second lateral dimension is equal to or greater than the first lateral dimension, the apparatus further including:

a source contact that penetrates the ILD0 and that contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and that contacts the salicide drain contact pad.

20. A computing system, comprising:

an apparatus including:

a channel in a semiconductive substrate;

a gate disposed above the channel;

a source implant on a first side of the gate and a drain implant on a second side of the gate;

a drain well in the semiconductive substrate that forms a junction with the channel;

a salicide source contact pad in the semiconductive substrate;

a salicide drain contact pad in the drain well, wherein the salicide drain contact pad is located farther from the second side than the salicide source contact pad is located from the first side; and

an interlayer dielectric layer (ILD0) disposed above and on the salicide drain contact pad and the drain well to complete a first device;

a second device disposed in a region of the semiconductive substrate that is separate from the first device and

a foundation substrate coupled to the first device and the second device.

21. The computing system of claim 20 , wherein the foundation substrate is a BBUL structure that incorporates the apparatus as system-on-chip (SoC) apparatus with an RF-capable region and a subsequent region that operates at a voltage lower than the RF-capable region.

22. The computing system of claim 20 , wherein the computing system is part of one of a cellular telephone, a pager, a portable computer, a desktop computer, and a two-way radio.

23. An apparatus comprising:

a first device comprising:

a channel in a semiconductive substrate;

a gate electrode disposed above the channel;

a source implant on a first side of the gate electrode and a drain implant on a second side of the gate electrode;

a drain well in the semiconductive substrate that forms a junction with the channel;

a salicide source contact pad on the semiconductive substrate;

a salicide drain contact pad on the drain well, wherein the salicide drain contact pad is located farther from the second side than the source contact pad is located from the first side; and

an interlayer dielectric layer (ILD0) disposed above and on the salicide drain contact pad and the drain well,

wherein the first device is included in a first region of the semiconductive substrate; and

a second device included in a second region of the semiconductive substrate separate from the first device;

wherein the first device is configured to operate at a voltage higher than the second device.

24. The apparatus of claim 23 , wherein the gate electrode is a high-K metal gate electrode, the first device includes an oxide dielectric disposed on the channel, and a high-K dielectric is disposed between the oxide dielectric and the gate electrode.

25. The apparatus of claim 23 , the first device including a source contact that penetrates the ILD0, wherein the source contact is symmetrical to the source contact pad.

26. The apparatus of claim 23 , the first device including:

a source contact that penetrates the ILD0 and contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and contacts the salicide drain contact pad;

wherein the ILD0 is disposed above and on the salicide source contact pad.

27. The apparatus of claim 23 , wherein the gate electrode is part of a gate, the first device including:

a source contact that penetrates the ILD0 and contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and contacts the salicide drain contact pad;

wherein the ILD0 is disposed above and on the gate.

28. A device, comprising:

a channel in a semiconductive substrate;

a gate electrode disposed above the channel;

a source implant on a first side of the gate electrode and a drain implant on a second side of the gate electrode;

a drain well in the semiconductive substrate that forms a junction with the channel;

a salicide source contact pad on the semiconductive substrate;

a salicide drain contact pad on the drain well, wherein the salicide drain contact pad is located farther from the second side than the source contact pad is located from the first side; and

an interlayer dielectric layer (ILD0) disposed above and on the salicide drain contact pad and the drain well;

a source contact that penetrates the ILD0 and that contacts the salicide source contact pad; and

a drain contact that penetrates the ILD0 and that contacts the salicide drain contact pad;

wherein the ILD0 is disposed above and on the salicide source contact pad.

29. The device of claim 28 , wherein the source contact is symmetrical to the source contact pad.

30. The device of claim 28 , wherein the device is a first device in a first region of the semiconductive substrate, a subsequent device is included in a region separate from the first device, the first device is configured to operate at a voltage higher than the subsequent device, and the first device and the subsequent device form an apparatus.

31. The device of claim 28 , wherein the gate electrode has a first lateral dimension between the first side and the second side, and the drain well has a second lateral dimension that is equal to or greater than the first lateral dimension.