Method for solid state crystal growth
A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.
1. A method for selective preparation of single phase pure intermetallic crystals, comprising the steps of:
positioning a primary reactant into a reaction apparatus;
positioning a secondary reactant into the reaction apparatus;
positioning an inert diffusion facilitating separation layer between the secondary reactant and the primary reactant;
applying heat and pressure to the reaction apparatus; and
controlling the release of vapor of at least one chemical constituent of the primary reactant whereby the controlled release results in a change in composition of the primary reactant.
2. The method of claim 1 further comprising encapsulating the outer diameter of the primary reactants, secondary reactants and diffusion facilitating layer with graphite foil.
3. The method of claim 1 wherein the primary reactant is selected from the group consisting of NaSi, NaGe, NaSn, KSi, KGe, KSn, RbSi, RbGe, RbSn, CsSi, CsGe, CsSn, BaSi 2 , BaGe 2 , BaSn 2 , SrSi 2 , SrGe 2 , SrSn 2 , Na 1-x K x Si 2 , Na 1-x K x Ge 2 , Na 1-x K x Sn 2 , Na 1-x Rb x Si 2 , Na 1-x Rb x Ge 2 , Na 1-x Rb x Sn 2 , Na 1-x Cs x Si 2 , Na 1-x Cs x Ge 2 , Na 1-x Cs x Sn 2 , K 1-x Rb x Si 2 , K 1-x Rb x Ge 2 , K 1-x Rb x Sn 2 , K 1-x Cs x Si 2 , K 1-x Cs x Ge 2 , K 1-x Cs x Sn 2 , Rb 1-x Cs x Si 2 , Rb 1-x Cs x Ge 2 , Rb 1-x Cs x Sn 2 , NaSi 1-y Ge y , KSi 1-y G y , RbSi 1-y Ge y , CsSi 1-y Ge y , Na 1-x K x Si 1-y Ge y , Na 1-x Rb x Si 1-y Ge y , Na 1-x Cs x Si 1-y Ge y , K 1-x Rb x Si 1-y Ge y , K 1-x Cs x Si 1-y Ge y , and Rb 1-x Cs x Si 1-y Ge y (0<x, y<1), or any variation, combination, mixture, alloy, or solid solution of any of these compounds.
4. The method of claim 3 wherein the primary reactant is reduced chemically to result in a crystal structure comprising single phase pure intermetallic crystals having less than 100% alkali metal or alkali earth metal occupancy in the crystal structure.
5. The method of claim 3 wherein the primary reactant is reduced by evaporation to result in a crystal structure comprising single phase pure intermetallic crystals having less than 100% alkali metal or alkali earth metal occupancy in the crystal structure.
6. The method of claim 1 wherein the primary reactant is selected from the group consisting of Na 4 Si 4 and K 4 Si 4 .
7. The method of claim 6 wherein the reactants are heated between about 580° C. and 590° C.
8. The method of claim 6 wherein the reactants are heated between about 650° C. and 670° C.
9. The method of claim 6 wherein the reactants are heated for between about 6 hours and about 8 hours.
10. The method of claim 1 wherein the secondary reactant is positioned above and below the primary reactant.
11. The method of claim 1 wherein the secondary reactant is selected from the group consisting of carbon, graphite and glass.
12. The method of claim 1 wherein the diffusion facilitating layer is selected from the group consisting of NaCl and BaF.
13. A method of producing intermetallic crystals comprising the steps of:
positioning a primary reactant within a reaction apparatus;
applying heat and pressure to the reaction apparatus; and
manually controlling the release of vapor of at least one chemical constituent of the primary reactant whereby the controlled release results in a change in composition of the primary reactant.
14. The method of claim 13 wherein the primary reactant is selected from the group consisting of NaSi, NaGe, NaSn, KSi, KGe, KSn, RbSi, RbGe, RbSn, CsSi, CsGe, CsSn, BaSi 2 , BaGe 2 , BaSn 2 , SrSi 2 , SrGe 2 , SrSn 2 , Na 1-x K x Si 2 , Na 1-x K x Ge 2 , Na 1-x K x Sn 2 , Na 1-x RbSi 2 , Na 1-x Rb x Ge 2 , Na 1-x Rb x Sn 2 , Na 1-x Cs x Si 2 , Na 1-x Cs x Ge 2 , Na 1-x Cs x Sn 2 , K 1-x RbSi 2 , K 1-x Rb x Ge 2 , K 1-x Rb x Sn 2 , K 1-x Cs x Si 2 , K 1-x Cs x Ge 2 , K 1-x Cs x Sn 2 , Rb 1-x Cs x Si 2 , Rb 1-x Cs x Ge 2 , Rb 1-x Cs x Sn 2 , NaSi 1-y Ge y , KSi 1-y G y , RbSi 1-y Ge y , CsSi 1-y Ge y , Na 1-x K x Si 1-y Ge y , Na 1-x Rb x Si 1-y Ge y , Na 1-x Cs x Si 1-y Ge y , K 1-x Rb x Si 1-y Ge y , K 1-x Cs x Si 1-y Ge y , and Rb 1-x Cs x Si 1-y Ge y (0<x, y<1), or any variation, combination, mixture, alloy, or solid solution of any of these compounds.
15. The method of claim 13 wherein the primary reactant is selected from the group consisting of Na 4 Si 4 and K 4 Si 4 .
16. The method of claim 13 wherein the secondary reactant is positioned above and below the primary reactant.
17. The method of claim 13 wherein the secondary reactant is selected from the group consisting of carbon, graphite and glass.
18. A single crystal clathrate compound comprising:
a type II clathrate lattice with atoms of silicon as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula of Si y , where y indicates the number of Si atoms in the main framework wherein y≦136; and
guest atoms (A) to selectively occupy the lattice spacings of the clathrate lattice such that the clathrate lattice follows the general formula A x Si y wherein 0<x<24.
19. The compound of claim 18 wherein y=136.
20. The compound of claim 18 wherein the guest atom is selected from the group consisting of alkali metals and alkali earth metals.
21. The compound of claim 20 wherein the guest atom is potassium (K).
22. The compound of claim 21 wherein x=24.