Semiconductor constructions
Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.
1. A semiconductor construction, comprising:
an electrically insulative material directly on a surface of a semiconductor substrate, the electrically insulative material consisting of one or more materials selected from the group consisting of silicon dioxide, borophosphoslicate glass, and phosphosilicate glass;
an opening extending only partially into the electrically insulative material, the opening having a pair of vertically opposing sidewalls that each meet a bottom of the opening, the bottom of the opening extending across the width of the opening and being disposed above the surface of the semiconductor substrate;
a metal liner directly contacting the electrically insulative material of sidewalls and bottom of the opening, the metal liner consisting of one or more transition metals combined with one or both of cobalt and ruthenium; and
copper-containing material within the opening and directly against the metal liner.
2. The construction of claim 1 wherein the metal liner comprises ruthenium and a transition metal.
3. The construction of claim 1 wherein the metal liner comprises cobalt.
4. The construction of claim 1 wherein the copper-containing material is reflowed copper being free of detectable voids.