IP Library Granted Patent US 8,316,718
Granted Patent B2
US 8,316,718 · App. 12/861,435 · Granted Nov 27, 2012

MEMS pressure sensor device and method of fabricating same

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Quick Facts
Patent No.
US 8,316,718
App. No.
12/861,435
Granted
Nov 27, 2012
Kind
B2
Abstract

A microelectromechanical systems (MEMS) pressure sensor device ( 20, 62 ) includes a substrate structure ( 22, 64 ) having a cavity ( 32, 68 ) formed therein and a substrate structure ( 24 ) having a reference element ( 36 ) formed therein. A sense element ( 44 ) is interposed between the substrate structures ( 22, 24 ) and is spaced apart from the reference element ( 36 ). The sense element ( 44 ) is exposed to an external environment ( 48 ) via one of the cavity ( 68 ) and a plurality of openings ( 38 ) formed in the reference element ( 36 ). The sense element ( 44 ) is movable relative to the reference element ( 36 ) in response to a pressure stimulus ( 54 ) from the environment ( 48 ). Fabrication methodology ( 76 ) entails forming ( 78 ) the substrate structure ( 22, 64 ) having the cavity ( 32, 68 ), fabricating ( 84 ) the substrate structure ( 24 ) including the sense element ( 44 ), coupling ( 92 ) the substrate structures, and subsequently forming ( 96 ) the reference element ( 36 ) in the substrate structure ( 24 ).

Claims (40)

1. A method of producing a microelectromechanical systems (MEMS) sensor device comprising:

forming a first substrate structure having a cavity;

forming a sense element from a material layer of a second substrate structure;

coupling said second substrate structure with said first substrate structure such that said sense element is interposed between said first and second substrate structures and is aligned with said cavity; and

forming a reference element in said second substrate structure aligned with said sense element, said reference element including a plurality of openings extending through said second substrate structure, wherein said sense element is exposed to an environment external to said MEMS sensor device via one of said cavity and said plurality of openings.

2. A method as claimed in claim 1 wherein:

said forming said sense element comprises depositing a sacrificial layer on a surface of a wafer substrate and depositing said material layer on said sacrificial layer; and

said method further comprises removing said sacrificial layer between said reference element and said sense element via said plurality of openings in said reference element following said coupling operation, said removing operation producing a gap between said reference element and said sense element.

3. A method as claimed in claim 1 wherein said forming said sense element includes producing said sense element having a first thickness that is less than a second thickness of said reference element.

4. A method as claimed in claim 3 wherein said first thickness of said sense element is less than fifteen percent of said second thickness of said reference element.

5. A method as claimed in claim 1 wherein said forming said first substrate structure produces said cavity having a depth that is less than a thickness of said first substrate structure, and said sense element is exposed to said environment via said plurality of openings.

6. A method as claimed in claim 5 wherein said coupling operation comprises controlling a cavity pressure of said cavity such that said cavity pressure is less than atmospheric pressure.

7. A method as claimed in claim 6 wherein said material layer is deposited on a first side of said second substrate structure, and said method further comprises attaching a cap to a second side of said second substrate structure to form a chamber in which said reference element is located; and

providing a port extending through said cap so that said sense element is exposed to said environment via said port.

8. A method as claimed in claim 1 wherein said forming said first substrate structure produces said cavity through a thickness of said first substrate structure, and said sense element is exposed to said environment via said cavity.

9. A method as claimed in claim 8 wherein said material layer is deposited on a first side of said second substrate structure, and said method further comprises attaching a cap to a second side of said second substrate structure to form a hermetically sealed chamber in which said reference element is located.

10. A method as claimed in claim 1 wherein said MEMS sensor device is a pressure sensor, and said sense element is a diaphragm that is movable relative to said reference element in response to a pressure stimulus from said environment, and said forming said sense element comprises forming said diaphragm from polycrystalline silicon.

11. A microelectromechanical systems (MEMS) sensor device comprising;

a first substrate structure having a cavity formed therein; and

a second substrate structure having a reference element formed in said second substrate structure and aligned with said cavity, said reference element including a plurality of openings extending through said second substrate structure;

a sense element disposed on a first side of said second substrate structure and aligned with said reference element, said sense element being spaced apart from said reference element to form a gap between said sense element and said reference element, said sense element being exposed to an environment external to said MEMS sensor device via one of said cavity and said plurality of openings, and said sense element being movable relative to said reference element in response to a pressure stimulus from said environment.

12. A MEMS sensor device as claimed in claim 11 wherein said sense element exhibits a first thickness that is less than a second thickness of said reference element.

13. A MEMS sensor device as claimed in claim 12 wherein said first thickness is less than fifteen percent of said second thickness of said reference element.

14. A MEMS sensor device as claimed in claim 11 wherein said cavity has a depth that is less than a thickness of said first substrate structure, and said sense element is exposed to said environment via said plurality of openings.

15. A MEMS sensor device as claimed in claim 14 further comprising a cap attached to a second side of said second substrate structure to form a chamber in which said reference element is located, said cap including a port extending through said cap so that said sense element is exposed to said environment via said port.

16. A MEMS sensor device as claimed in claim 11 wherein said cavity extends through a thickness of said first substrate structure, said sense element being exposed to said environment via said cavity, and said MEMS sensor device further comprises a cap attached to a second side of said second substrate structure to form a hermetically sealed chamber in which said reference element is located.

17. A MEMS sensor device as claimed in claim 11 wherein said sense element and said reference element form a capacitive pressure sensor.

18. A method of producing a microelectromechanical systems (MEMS) sensor device comprising:

forming a first substrate structure including a cavity;

forming a sense element from a material layer on a first side of a second substrate structure, said forming said sense element including depositing a sacrificial layer on a wafer substrate and depositing said material layer on said sacrificial layer;

coupling said second substrate structure with said first substrate structure such that said sense element is interposed between said first and second substrate structures and is aligned with said cavity;

forming a reference element in said second substrate structure aligned with said sense element, said reference element including a plurality of openings extending through said second substrate;

removing said sacrificial layer between said reference element and said sense element via said plurality of openings in said reference element following said coupling operation, said removing operation producing a gap between said reference element and said sense element; and

attaching a cap to a second side of said second substrate structure to form a chamber in which said reference element is located, wherein said sense element is exposed to an environment external to said MEMS sensor device via one of said cavity and said plurality of openings, and said sense element is movable relative to said reference element in response to a pressure stimulus from said environment.

19. A method as claimed in claim 18 wherein:

said forming said first substrate structure produces said cavity having a depth that is less than a thickness of said first substrate structure; and

providing a port extending through said cap so that said sense element is exposed to said environment via said port.

20. A method as claimed in claim 18 wherein:

said forming said first substrate structure produces said cavity through a thickness of said first substrate structure, said sense element being exposed to said environment via said cavity; and

said coupling said cap forms a hermetically sealed chamber bounded by said cap and said sense element in which said reference element is located.

Assignments (29)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0285 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jan 31, 2012
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2010
From: LIN, YIZHEN; SCHLARMANN, MARK E.; DESAI, HEMANT D.; PARK, WOO TAE
To: FREESCALE SEMICONDUCTOR, INC.
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