IP Library Granted Patent US 9,091,913
Granted Patent B2
US 9,091,913 · App. 12/864,407 · Granted Jul 28, 2015

Method for producing spatially patterned structures using fluorinated compounds

Inventors: Howard Edan Katz (Owings Mills, MD); Bal Makund Dhar (Baltimore, MD)
Assignee: The Johns Hopkins University
G03F7/0035H01L51/0023H01L51/0545H01L51/102Y10T428/24479
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Quick Facts
Patent No.
US 9,091,913
App. No.
12/864,407
Granted
Jul 28, 2015
Kind
B2
Abstract

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Claims (56)

1. A method for producing a spatially patterned structure, comprising:

forming a layer of a material on at least a portion of a substructure of said spatially patterned structure, said material comprising at least one of an organic semiconductor material, an organometallic material, or a biological material;

forming a barrier layer of a fluorinated material on said layer of material to provide an intermediate structure; and

exposing said intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of said intermediate structure,

wherein said barrier layer substantially protects said layer of said material from chemical and structural changes during said exposing.

2. A method for producing a spatially patterned structure according to claim 1 , further comprising removing at least a portion of said barrier layer using a fluorinated solvent.

3. A method for producing a spatially patterned structure according to claim 2 , wherein said fluorinated solvent is perfluorodecalin.

4. A method for producing a spatially patterned structure according to claim 1 , wherein said fluorinated material of said barrier layer comprises at least one of perfluoropentadecane, perfluoroeicosane, perfluorotetracosane or a perfluoropolymer.

5. A method for producing a spatially patterned structure according to claim 4 , wherein said perfluoropolymer is CYTOP.

6. A method for producing a spatially patterned structure according to claim 1 , wherein the exposing said intermediate structure comprises:

forming a layer of a photoresist on said barrier layer;

exposing said photoresist to spatially patterned radiation; and

developing said photoresist to substantially remove one of exposed or unexposed regions of said photoresist to provide a pattern of uncovered regions of barrier material between regions covered by photoresist.

7. A method for producing a spatially patterned structure according to claim 1 , wherein said substructure of said spatially patterned structure comprises a substrate.

8. A method for producing a spatially patterned structure according to claim 7 , wherein said substrate is a flexible substrate.

9. A method for producing a spatially patterned structure according to claim 1 , wherein said spatially patterned structure is an electronic device.

10. A method for producing a spatially patterned structure according to claim 1 , wherein said spatially patterned structure is a bio-sensor.

11. A method for producing a spatially patterned structure according to claim 1 , wherein said spatially patterned structure is a microfluidic device.

12. A method for producing a spatially patterned structure comprising:

forming a layer of a material on at least a portion of a substructure of said spatially patterned structure;

forming a barrier layer of a fluorinated material on said layer of material to provide an intermediate structure;

forming a layer of a photoresist on said barrier layer;

exposing said photoresist to spatially patterned radiation;

developing said photoresist to substantially remove one of exposed or unexposed regions of said photoresist to provide a pattern of uncovered regions of barrier material between regions covered by photoresist;

removing portions of said barrier material that are uncovered by said photoresist to provide a pattern of uncovered regions of said layer of material;

exposing said intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of said intermediate structure, wherein said exposing said intermediate structure comprises depositing a layer of conductive material over at least said pattern of uncovered regions of said layer of material;

removing said photoresist and any conductive material deposited on said photoresist; and

removing remaining portions of said barrier layer using a fluorinated solvent,

wherein said barrier layer substantially protects said layer of said material from chemical and structural changes during said forming said layer of said photoresist and said exposing said photoresist, and

wherein said substructure comprises a substrate, a plurality of electrodes and a dielectric layer formed on said substrate and said plurality of electrodes such that said spatially patterned structure comprises a field effect transistor.

13. A method for producing a spatially patterned structure according to claim 12 , further comprising:

forming a layer of a fluorinated material on said field effect transistor; and

forming an electrode on said layer of fluorinated material on said field effect transistor to provide a top-gated transistor.

14. A method for producing a spatially patterned structure, comprising:

forming a layer of a material on at least a portion of a substructure of said spatially patterned structure, said material comprising at least one of an organic semiconductor material, an organometallic material, or a biological material;

forming a barrier layer of a fluorinated material on said layer of material to provide an intermediate structure; and

exposing said intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of said intermediate structure, comprises forming said second material on at least a portion of said intermediate structure, said barrier layer preventing said material and said second material from coming into contact with each other;

wherein said barrier layer substantially protects said layer of said material from chemical and structural changes during said exposing.

15. A method for producing a spatially patterned structure according to claim 14 , wherein said forming said layer of said material and forming said second material comprise a printing process.

16. A method for producing a spatially patterned structure, comprising:

providing a substructure of said spatially patterned structure, said substructure comprising a layer comprising at least one of an organic semiconductor material, an organometallic material, or a biological material;

forming a barrier layer of a fluorinated material on said layer of said substructure to provide an intermediate structure; and

removing said barrier layer of fluorinated material from said intermediate structure,

wherein said barrier layer substantially protects at least a portion of said layer of said substructure from chemical and structural changes during said producing said spatially patterned structure.

17. A method for producing a spatially patterned structure, comprising:

forming a layer of a material on at least a portion of a substructure of the spatially patterned structure;

forming a barrier layer of a fluorinated material on said layer of material;

forming a layer of a photoresist on said barrier layer;

exposing said photoresist to spatially patterned radiation;

developing said photoresist to substantially remove one of exposed or unexposed regions of said photoresist to provide a pattern of uncovered regions of barrier material between regions covered by photoresist; and

removing portions of said uncovered regions of barrier material using a fluorinated solvent to provide a pattern of uncovered regions of said layer of material.

18. A method for producing a spatially patterned structure according to claim 17 , wherein said layer of material formed on at least said portion of said substructure comprises at least one of an organic material, a polymeric material, an organometallic material or a biological material.

19. A method for producing a spatially patterned structure according to claim 17 , wherein said layer of material comprises a material that provides an electronic function to said spatially patterned structure.

20. A method for producing a spatially patterned structure according to claim 19 , wherein said layer of material comprises a material that is selected from at least one of a conductor, a semiconductor or an insulator.

21. A method for producing a spatially patterned structure according to claim 17 , wherein said forming said layer of said material is forming a layer of an organic semiconductor.

22. A method for producing a spatially patterned structure according to claim 17 , wherein said forming said layer of said material is forming a layer of a biological material.

Assignments (1)
CONFIRMATORY LICENSE Recorded Apr 21, 2022
From: JOHNS HOPKINS UNIVERSITY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 059750/0471 →
Continuity (2)
Provisional Application 61123678 · Apr 10, 2008
Related Publication 20100289019A1 · Nov 18, 2010