Silicon solar cell manufacture

1. A method for manufacturing a silicon solar cell, comprising:

providing a carrier plate;

applying a first contact pattern to the carrier plate, the first contact pattern comprising a set of first laminar contacts;

applying plurality of preformed, integral, and individual silicon slices to the first contact pattern in a pick-and-place manner such that the silicon slices as preformed are picked up and placed on the first contact pattern, the silicon slices being preformed in that the silicon slices do not undergo any further processing thereof after placement on the first contact pattern, the silicon slices being integral in that each silicon slice is integrally complete prior to placement on the first contact pattern, the silicon slices being individual in that each silicon slice is not separated or cut into more than one silicon slice after placement on the first contact pattern, wherein each first laminar contact of the set of first laminar contacts is in direct physical spatial laminar contact with no more than two silicon slices; and,

applying a second contact pattern to the plurality of silicon slices, wherein the second contact pattern comprises a set of second laminar contacts, and wherein each second laminar contact of the set of second laminar contacts is in direct physical spatial laminar contact with no more than two silicon slices.

2. The method of claim 1 , wherein:

each first laminar contact of the set of first laminar contacts is in spatial laminar contact with exactly two silicon slices, and

each second laminar contact of the set of second laminar contacts is in spatial laminar contact with exactly two silicon slices.

3. The method of claim 1 , wherein each silicon slice is in spatial laminar contact with exactly one first laminar contact and one second laminar contact.

4. The method of claim 1 , further comprising one or more of passivating and anti-reflective coating one or more of the carrier plate and the silicon slices.

5. The method of claim 1 , further comprising one or more of adhering the silicon slices to the first laminar contacts and adhering the silicon slices to the second laminar contacts.

6. The method of claim 5 , wherein one or more of:

the adhesion of the silicon slices to the first laminar contacts is performed by applying a first contact glue to the set of first laminar contacts or the silicon slices, the first contact glue adhering the silicon slices to the first laminar contacts, and

the adhesion of the silicon slices to the second laminar contacts is performed by applying a second contact glue to the set of second laminar contacts or the silicon slices, the second contact glue adhering the silicon slices to the second laminar contacts.

7. The method of claim 5 , wherein one or more of the adhesion of the silicon slices to the first laminar contacts is performed by anodic bonding techniques, and the adhesion of the silicon slices to the second laminar contacts is performed by anodic bonding techniques.

8. The method of claim 1 , wherein the first or the second contact pattern is applied to the carrier plate by printing or by lithography.

9. The method of claim 8 , wherein the printing is a screen printing process, or wherein the printing is performed using a hard mask.

10. The method of claim 9 , wherein the printing comprises:

covering the carrier plate with a first hard mask, the first hard mask comprising a pattern of first openings, the first openings uncovering the carrier plate at areas designated for the first contact pattern;

depositing a masking material through the first hard mask on the carrier plate;

removing the first hard mask;

depositing a conductive material on the carrier plate; and,

removing the masking material from the carrier plate,

wherein the remaining conductive material constitutes the first contact pattern.

11. The method of claim 10 , wherein the printing further comprises:

covering the plurality of silicon slices with a second hard mask, the second hard mask comprising a pattern of second openings, the second openings uncovering the plurality of silicon slices at areas designated for the second contact pattern;

depositing a masking material through the second hard mask on the carrier plate;

removing the second hard mask;

depositing a conductive material on the plurality of silicon slices; and,

removing the masking material from the carrier plate,

wherein the remaining conductive material constitutes the second contact pattern.

12. The method of claim 9 , wherein the hard mask is provided by using soft-stamping techniques.

13. The method of claim 1 , further comprising applying a filler material to the silicon slices, wherein the filler material fills the gaps between adjacent silicon slices, and wherein the filler material is electrically isolating.