TFT array substrate and the fabrication method thereof for preventing corrosion of a pad

1. A method of fabricating a TFT (thin film transistor) array substrate comprising:

forming a gate electrode, a gate line, a gate pad, and a data pad on a substrate;

forming a gate insulating layer on the gate electrode;

forming a data line that crosses the gate line, a source electrode and a drain electrode, a semiconductor layer forming a channel between the source electrode and the drain electrode on the gate insulating layer, and forming a channel passivation layer on the semiconductor layer so as to protect the channel of the semiconductor layer; and

forming a pixel electrode on the drain electrode and the gate insulating layer and a jumping electrode connecting the data line with the data pad,

wherein the forming of the data line that crosses the gate line, the source electrode and the drain electrode, the semiconductor layer forming the channel between the source electrode and the drain electrode on the gate insulating layer, and the forming of the channel passivation layer on the semiconductor layer so as to protect the channel of the semiconductor layer, includes:

sequentially forming a first semiconductor layer, a second semiconductor layer, and a data metal layer on the gate insulating layer;

forming a step photoresist pattern on the data metal layer using a partial exposure mask;

patterning the first and second semiconductor layers, and the data metal layer using the photoresist pattern to form an active layer, an ohmic contact layer, the data line, the source electrode, and the drain electrode;

ashing the photoresist pattern;

patterning the metal layer and the ohmic contact layer that correspond to the channel using the ashed photoresist pattern to expose the active layer forming the channel;

exposing the exposed surface of the active layer to plasma using the ashed photoresist pattern as a mask to form the channel passivation layer on the exposed active layer; and

removing the ashed photoresist pattern, and

wherein the channel passivation layer is only formed on the channel of the semiconductor layer.

2. The method according to claim 1 , wherein the forming of the channel passivation layer includes forming the channel passivation layer on the active layer by allowing silicon in the active layer to react with one of Ox-plasma and Nx-plasma.

3. The method according to claim 1 , further including:

forming a transparent conductive pattern using the same material as the pixel electrode on the data line connected to the source electrode and along the source electrode and the drain electrode.

4. The method according to claim 3 , wherein the forming of the transparent conductive pattern includes:

depositing a transparent conductive layer on an entire surface of the substrate having the source electrode, the drain electrode, the semiconductor layer, and the channel passivation layer formed thereon; and

forming a photoresist pattern on the transparent conductive layer.

5. The method according to claim 4 , further including, after the forming of the photoresist pattern:

ashing the photoresist pattern; and

etching the transparent conductive layer using the ashed photoresist pattern.

6. The method according to claim 1 , further including:

forming a storage capacitor including the gate line connected to the gate electrode and the pixel electrode that overlaps the gate line with the gate insulating layer in between.

7. The method according to claim 1 , further including:

forming a gate pad lower electrode extending from the gate line connected to the gate electrode;

forming a contact hole passing through the gate insulating layer to expose the gate pad lower electrode; and

forming a gate pad upper electrode connected to the gate pad lower electrode through the contact hole.

8. The method according to claim 1 , further including:

forming a data pad lower electrode connected to the data line connected to the source electrode through the jumping electrode on the semiconductor layer; and

forming a data pad upper electrode connected to the data pad lower electrode through a contact hole with the gate insulating layer in between.

9. The method according to claim 1 , wherein the jumping electrode is made of a transparent conductive pattern.

10. The method according to claim 1 , wherein the data pad and the data line are formed of different materials.

11. A method of fabricating a TFT (thin film transistor) array substrate comprising:

forming a first conductive pattern group that includes a gate line, a gate electrode connected to the gate line, a gate pad lower electrode extending from the gate line, and a data pad lower electrode on a substrate;

forming a gate insulating layer to cover the first conductive pattern group;

forming a second conductive pattern group that includes a data line that intersects the gate line, a source electrode protruding from the data line, a drain electrode that faces the source electrode with a channel in between and a semiconductor group that forms the channel on the gate insulating layer, and forming a channel passivation layer on the channel of the semiconductor group;

forming a first contact hole passing through the gate insulating layer to expose the gate pad lower electrode and a second contact hole passing through the gate insulating layer to expose a portion of the data pad lower electrode; and

forming a third conductive pattern group that includes a pixel electrode contacting the drain electrode, a data pad upper electrode connected to the data pad lower electrode through the second contact hole, a gate pad upper electrode connected to the gate pad lower electrode through the first contact hole, and a jumping electrode connecting the data pad lower electrode with the data line through a contact hole,

wherein the forming of the second conductive pattern group, includes:

sequentially forming a first semiconductor layer, a second semiconductor layer, and a data metal layer on the gate insulating layer;

forming a step photoresist pattern on the data metal layer using a partial exposure mask;

patterning the first and second semiconductor layers, and the data metal layer using the photoresist pattern to form the semiconductor group including an active layer and an ohmic contact layer, the data line, the source electrode, and the drain electrode;

ashing the photoresist pattern;

patterning the metal layer and the ohmic contact layer that correspond to the channel using the ashed photoresist pattern to expose the active layer forming the channel;

exposing the exposed surface of the active layer to plasma using the ashed photoresist pattern as a mask to form the channel passivation layer on the exposed active layer; and

removing the ashed photoresist pattern, and

wherein the channel passivation layer is only formed on the channel of the semiconductor layer.

12. The method according to claim 11 , wherein the forming of the channel passivation layer includes forming the channel passivation layer on the active layer by allowing silicon in the active layer that forms the channel to react to one of Ox-plasma and Nx-plasma.

13. The method according to claim 11 , further including:

forming a transparent conductive pattern using the same material as the pixel electrode on the data line, the source electrode, and the drain electrode.

14. The method according to claim 11 , further including:

forming a static electricity prevention line pattern connected to the data line and spaced a predetermined interval when the first conductive pattern group is formed.

15. The method according to claim 11 , wherein the first conductive pattern group further includes a first shorting bar and the second conductive pattern group further includes a second shorting bar.

16. The method according to claim 15 , further including cutting and removing the first and second shorting bars.