IP Library Granted Patent US 8,080,185
Granted Patent B2
US 8,080,185 · App. 12/871,169 · Granted Dec 20, 2011

Gaseous dielectrics with low global warming potentials

Assignee: Honeywell International Inc.
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Quick Facts
Patent No.
US 8,080,185
App. No.
12/871,169
Granted
Dec 20, 2011
Kind
B2
Abstract

A dielectric gaseous compound which exhibits the following properties: a boiling point in the range between about −20° C. to about −273° C.; non-ozone depleting; a GWP less than about 22,200; chemical stability, as measured by a negative standard enthalpy of formation (dHf<0); a toxicity level such that when the dielectric gas leaks, the effective diluted concentration does not exceed its PEL; and a dielectric strength greater than air.

Claims (395)

1. A method of using a gaseous dielectric compound to insulate electrical equipment comprising the steps of:

providing electrical equipment configured to have an insulation gas, the electrical equipment being selected from the group consisting of current-interruption equipment, gas-insulated transmission lines, gas-insulated transformers, and gas-insulated substations; and

placing an insulation gas in the electrical equipment, the insulation gas consisting of:

at least one gas selected from the group consisting of nitrogen, CO 2 and N 2 O; and

a gaseous compound selected to have each of the following properties:

a boiling point in the range between about −20° C. to about −273° C.;

a GWP less than about 22,200;

chemical stability, as measured by a negative standard enthalpy of formation (dHf<0);

a toxicity level such that when the dielectric gas leaks, the effective diluted concentration does not exceed its PEL in the working environment; and

a dielectric strength greater than air.

2. The method of claim 1 , wherein the gaseous compound is selected from the group consisting of:

Arsenic pentaflouride;

Arsine;

Diboron tetrafluoride;

Diborane;

Perchloric acid, 2-chloro-1,1,2,2-tetrafluoroethyl ester;

Perchloric acid, 1,2,2-trichloro-1,2-difluoroethyl ester;

Trifluoroacetyl chloride;

trifluoromethylisocyanide (CF3—NC);

trifluoro-nitroso-ethene;

Tetrafluoroethene;

3,3,4,4-tetrafluoro-3,4-dihydro-[1,2]diazete;

(Difluoramino)difluoracetonitrile;

Tetrafluorooxirane;

Trifluoroacetyl fluoride;

Perfluormethylfluorformate;

trifluoro-aceryl hypofluorite;

perfluoro-2-aza-1-propene;

3,3-difluoro-2-trifluoromethyl-oxaziridine;

bis-trifluoromethyl-diazene;

Fluoroxypentafluoroethane;

bis-trifluoromethyl peroxide;

1,1-Bis(fluoroxy)tetrafluoroethane;

Hexafluorodimethyl sulfide;

3-fluoro-3H-diazirine-3-carbonitrile;

Ethyne;

1,2,2-trifluoro-aziridine;

Ketene;

(difluoro)vinylborane;

trifluoro-vinyl-silane;

Ethinylsilane;

ethyl-difluor-borane;

methyl-methylen-amine;

Dimethyl ether;

vinyl-silane;

Dimethylsilane;

Chloroethyne;

fluoroethyne;

Ethanedinitrile;

1,3,3,3-tetrafluoropropyne;

hexafluoro-oxetane;

Trifluoro(trifluoromethyl)oxirane;

1,1,1,3,3,3-Hexafluoropropanone;

pentafluoro-propionyl fluoride;

Trifluoromethyl trifluorovinyl ether;

1-Propyne;

Cyclopropane;

Propane;

Trimethylborane;

Cyanoketene;

Butatriene;

Cyano-bispentafluorethyl-phosphine;

Trimethyl-1,1,2,2-tetrafluorethylsilane;

methyl diborane;

carbonyl bromide fluoride;

chloro-difluoro-nitroso-methane;

chloroperoxytrifluorornethane;

carbonylchlor-fluoride;

3,3-difluoro-3H-diazirine;

difluoro diazomethane;

Carbonyl fluoride;

Difluordioxiran;

difluoro-(3-fluoro-3H-diazirin-3-yl)-amine;

trifluoromethylazide;

tetrafluoro-diaziridine;

Fluoroperoxytrifluormethane;

Bis(fluoroxy)difluormethane;

Trifluormethyl-phosphonylfluoride;

Cyanogen fluoride;

Diazomethane;

formaldehyde;

(methyl)difluoroborane;

Chloromethane;

methylphosphonous acid difluoride;

trifluoro-methoxy-silane;

Methylhypofluoride;

Methane;

Methylsilane;

bromo(silylmethyl)silane;

iodo(silylmethyl)silane;

Difluoromethyl nitrite;

Trifluoromethanol;

Formyl fluoride;

Cyanic acid;

Chlorine;

Chlorine fluoride;

Chlorine trioxide fluoride;

carbon oxide selenide;

Fluorine;

Difluorosilane;

Fluorine oxide;

fluorine peroxide;

Sulfuryl fluoride;

sulphur difluoride;

Phosphorus trifluoride oxide;

Phosphorus trifluoride sulfide;

Tetrafluorophosphorane;

Tetrafluorohydrazine;

Sulfur tetrafluoride;

hexafluoro disiloxane;

Nitryl fluoride;

Hydrogen;

Hydrogen selenide;

Phosphorus trihydride;

Germanium hydride;

Silane;

Tin tetrahydride;

Oxygen;

Ozone;

Antimony monophosphide;

Disilicon monophosphide;

Radon;

Argon;

Trifluoroborane;

Hydrogen bromide;

Bromopentafluoroethane;

Chlorotrifluoroethene;

Trifluoroacetonitrile;

trifluoromethyl isocyanate;

trifluoromethyl thiocarbonyl fluoride;

pentafluoro-nitroso-ethane;

(trifluoromethyl-carbonyl)-difluoro-amine;

Hexafluoroethane;

Bis-trifluoromethyl-nitroxide;

bis-trifluoromethyl ether;

bis(trifluoromethyl)tellurium;

bis(trifluoromethyl) ditelluride;

N,N-Difluor-Dentafluoroethylamine;

N-Fluor-bis(trifluormethyl)-amine;

N-Fluor-N-trifluormethoxy-perfluoromethylamine;

fluoroformyl cyanide;

1-chloro-1-fluoro-ethene;

trans-1,2-difluoro-ethene;

1,2-difluoro-ethene;

cis-1,2-difluoro-ethene

1,1,1,2-Tetrafluoroethane;

1,1,2,2-Tetrafluoroethane;

Fluoroethene;

1,1,1-Trifluoroethane;

Ether, methyl trifluoromethyl;

Ethene;

1,1-Difluoroethane;

Fluoroethane;

Ethane;

fluoro-dimethyl-borane;

Disiloxane 1,1,3,3-tetrafluoro-1,3-dimethyl-trifluoroethene;

trifluoroacetaldehyde;

Pentafluoroethane;

Difluoromethyl trifluoromethyl ether;

Tris(trifluoromethyl)bismuth;

tetrafluoropropadiene;

tetrafluorocyclopropene;

Perfluoropropionyliodide;

pentafluoro-propionitrile;

hexafluoro-cyclopropane;

Hexafluoropropylene;

hexafluoro-[1,3]dioxolane;

Octafluoropropane;

Perfluormethylethylether;

1,1-difluoro-propadiene; 2,3,3,3-tetrafluoro-propene;

trans HFO-1234ze;

3,3,3-Trifluoropropene;

Cyclopropene;

Allene;

1,1-difluoro-propene;

Methylketene;

2-fluoropropene;

1-Propene;

DL-2-aminopropanoic acid;

3,3,3-trifluoro-1-propyne;

1,1,3,3,3-pentafluoro-propene;

1,2,3,3,3-pentafluoro-propene;

1,1,1,4,4,4-hexafluoro-2-butyne;

1,1,4,4-tetrafluoro-butane-2,3-dione;

Trifluoromethylhypochlorite;

Chloro-difluoro-methyl-hvpoflourite;

Chlorodifluorodifluoraminomethane;

thiocarbonyl difluoride;

Trifluoroiodomethane;

trifluoro-nitroso-methane;

difluoro-carbamoyl fluoride;

trifluoro-nitro-methane;

Tetrafluoromethane;

Tetrafluorourea;

hypofluorous acid trifluoromethyl ester;

trifluoromethanesulfonyl fluoride;

N,N-Difluor-trifluoromethylamine;

Trifluormethyloxydifluoroamine;

sulfurcyanide pentafluoride;

difluoro-trifluoromethyl-phosphine;

Hexafluormethandiamine;

perfluoro methyl silane;

Difluoromethane;

Fluoroiodomethane;

Fluoromethane;

trifluoromethyl-silane;

methyltrifluorosilane;

difluoro-methyl-silane;

fluoro-methyl-silane;

methylgermane;

Difluorformimin;

Trifluoromethane;

trifluoromethane thiol;

N,N,1,1-Tetrafluormethylamin;

difluoro dichlorosilane;

difluoro chlorosilane;

Phosphorus chloride difluoride;

Chlorotrifluorosilane;

Hydrogen chloride;

Chlorosilane;

Carbon monoxide;

Carbonyl sulfide;

Difluoramine;

trans-Difluorodiazine;

cis-Difluorodiazine;

Thionyl fluoride;

Trifluorosilane;

Nitrogen trifluoride;

Trifluoramine oxide;

thiazyl trifluoride;

Phosphorus trifluoride;

Germanium(IV) fluoride;

Tetrafluorosilane;

Phosphorus pentafluoride;

Selenium hexafluoride;

Tellurium hexafluoride;

Fluorosilane;

Nitrosyl fluoride;

Fluorine nitrate;

Hydrogen sulfide;

Ammonia;

Helium;

Hydrogen iodide;

Krypton;

Neon;

Nitrogen oxide; and

Xenon.

3. The method of claim 2 , wherein the gaseous compound is selected from the group consisting of:

Argon;

Trifluoroborane;

Hydrogen bromide;

Bromopentafluoroethane;

Chlorotrifluoroethene;

Trifluoroacetonitrile;

trifluoromethyl isocyanate;

trifluoromethyl thiocarbonyl fluoride;

pentafluoro-nitroso-ethane;

(trifluoromethyl-carbonyl)-difluoro-amine;

Hexafluoroethane;

Bis-trifluoromethyl-nitroxide;

bis-trifluoromethyl ether;

bis(trifluoromethyl)tellurium;

bis(trifluoromethyl) ditelluride;

N,N-Difluor-pentafluoroethylamine;

N-Fluor-bis(trifluormethyl)-amine;

N-Fluor-N-trifluormethoxy-perfluoromethylamine;

fluoroformyl cyanide;

1-chloro-1-fluoro-ethene;

trans-1,2-difluoro-ethene;

1,2-difluoro-ethene;

cis-1,2-difluoro-ethene;

1,1,1,2-Tetrafluoroethane;

1,1,2,2-Tetrafluoroethane;

Fluoroethene;

1,1,1-Trifluoroethane;

Ether, methyl trifluoromethyl;

Ethene;

1,1-Difluoroethane;

Fluoroethane;

Ethane;

fluoro-dimethyl-borane;

Disiloxane 1,1,3,3-tetrafluoro-1,3-dimethyl-trifluoroethene;

trifluoroacetaldehyde;

Pentafluoroethane;

Difluoromethyl trifluoromethyl ether;

Tris(trifluoromethyl)bismuth;

tetrafluoropropadiene;

tetrafluorocyclopropene;

Perfluoropropionyliodide;

pentafluoro-propionitrile;

hexafluoro-cyclopropane;

Hexafluoropropylene;

hexafluoro-[1,3]dioxolane;

Octafluoropropane;

Perfluormethylethylether;

1,1-difluoro-propadiene;

2,3,3,3-tetrafluoro-propene;

trans HFO-1234ze;

3,3,3-Trifluoropropene;

Cyclopropene;

Allene;

1,1-difluoro-propene;

Methylketene;

2-fluoropropene;

1-Propene;

DL-2-aminopropanoic acid;

3,3,3-trifluoro-1-propyne;

1,1,3,3,3-pentafluoro-propene;

1,2,3,3,3-pentafluoro-propene;

1,1,1,4,4,4-hexafluoro-2-butyne;

1,1,4,4-tetrafluoro-butane-2,3-dione;

Trifluoromethylhypochlorite;

Chloro-difluoro-methyl-hypofluorite;

Chlorodifluordifluoraminomethane;

thiocarbonyl difluoride;

selenocarbonyl difluoride;

Trifluoroiodomethane;

trifluoro-nitroso-methane;

difluoro-carbamoyl fluoride;

trifluoro-nitro-methane;

Tetrafluoromethane;

Tetrafluorourea;

hypofluorous acid trifluoromethyl ester;

trifluoromethanesulfonyl fluoride;

Trifluormethyloxydifluoramin;

(Difluoraminoxy)difluoromethylhypofluorite;

sulfurcyanide pentafluoride;

difluoro-trifluoromethyl-phosphine;

Hexafluormethandiamine;

perfluoro methyl silane;

Difluoromethane;

Fluoroiodomethane;

fluoromethane;

methyltrifluorosilane;

difluoro-methyl-silane;

fluoro-methyl-silane;

methylgermane;

Difluorformimin;

Trifluoromethane;

trifluoromethane thiol;

N,N,1,1-Tetrafluormethylamin;

difluoro dichlorosilane;

difluoro chlorosilane;

Phosphorus chloride difluoride;

Chlorotrifluorosilane;

Hydrogen chloride;

Chlorosilane;

Carbon monoxide;

Carbonyl sulfide;

Difluoramine;

trans-Difluorodiazine;

cis-Difluorodiazine;

Thionyl fluoride;

Trifluorosilane;

Nitrogen trifluoride;

Trifluoramine oxide;

thiazyl trifluoride;

Phosphorus trifluoride;

Germanium(IV) fluoride;

Tetrafluorosilane;

Phosphorus pentafluoride;

Selenium hexafluoride;

Tellurium hexafluoride;

Fluorosilane;

Nitrosyl fluoride;

Fluorine nitrate;

Hydrogen sulfide;

Ammonia;

Helium;

Hydrogen iodide;

Krypton;

Neon;

Nitrogen oxide; and

Xenon.

4. A method of using a gaseous dielectric compound to insulate electrical equipment comprising the steps of:

providing electrical equipment configured to have an insulation gas; and

placing an insulation gas in the electrical equipment, the insulation gas consisting of:

at least one gas selected from the group consisting of nitrogen, CO 2 and N 2 O; and

tetrafluorosilane.

5. The method of claim 4 , wherein the electrical equipment is selected from the group consisting of current-interruption equipment, gas-insulated transmission lines, gas-insulated transformers, and gas-insulated substations.

6. The method of claim 4 , wherein the electrical equipment has SF 6 as an existing insulation gas and the step of placing comprises replacing the SF 6 with the insulation gas.

7. The method of claim 1 , wherein the electrical equipment has SF 6 as an existing insulation gas and the step of placing comprises replacing the SF 6 with the insulation gas.

8. The method of claim 1 , wherein the gaseous compound is low ozone depleting.

9. The method of claim 1 , wherein the gaseous compound is non-ozone depleting.

10. A method of using a gaseous dielectric compound to insulate electrical equipment comprising the steps of:

providing electrical equipment having SF 6 as an insulation gas; and

replacing the SF 6 with an insulation gas, the insulation gas consisting of:

at least one gas selected from the group consisting of nitrogen, CO 2 and N 2 O; and

a gaseous compound selected to have each of the following properties:

a boiling point in the range between about −20° C. to about −273° C.;

a GWP less than about 22,200;

chemical stability, as measured by a negative standard enthalpy of formation (dHf<0);

a toxicity level such that when the dielectric gas leaks, the effective diluted concentration does not exceed its PEL in the working environment; and

a dielectric strength greater than air.

11. The method of claim 10 , wherein the electrical equipment is selected from the group consisting of current-interruption equipment, gas-insulated transmission lines, gas-insulated transformers, and gas-insulated substations.

Assignments (2)
NUNC PRO TUNC ASSIGNMENT Recorded Apr 12, 2026
From: HONEYWELL INTERNATIONAL INC.
To: SOLSTICE ADVANCED MATERIALS US, INC.
Reel/Frame 074343/0989 →
SECURITY INTEREST Recorded Jan 12, 2026
From: SOLSTICE ADVANCED MATERIALS US, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 074569/0260 →
Continuity (2)
Continuation 11637657 · Dec 12, 2006
Related Publication 20100320428A1 · Dec 23, 2010