Solid state lighting devices with improved contacts and associated methods of manufacturing
View Patent ↗Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.
1. A solid state lighting (“SSL”) device comprising:
a first semiconductor material;
a second semiconductor material spaced apart from the first semiconductor material;
an active region between the first and second semiconductor materials;
a contact on the first or second semiconductor material, wherein the contact includes—
a first material having a first contact resistance, wherein the first material includes an insulative material on the first semiconductor material, the insulative material having a plurality of openings extending between the first semiconductor material and a surface of the insulative material, at least one of the plurality of openings having a different shape or size from the other openings; and
a second material having a second contact resistance different than the first contact resistance, wherein the second material includes a conductive material on the insulative material, the conductive material having a first portion on the surface of the insulative material and a second portion in the openings of the insulative material; and
wherein at least one of a shape, a size, a profile, and a distribution of the first and second materials varies from one region of the SSL device to another region of the SSL device.
2. An SSL device comprising:
a first semiconductor material;
a second semiconductor material spaced apart from the first semiconductor material;
an active region between the first and second semiconductor materials;
a first contact on the first semiconductor material;
a second contact on the second semiconductor material wherein the second contact is laterally spaced apart from the first contact;
wherein the first contact includes a first material having a first contact resistance and a second material having a second contact resistance, the first contact resistance being different from the second contact resistance;
wherein at least one of a shape, a size, a profile, and a distribution of the first and second materials varies from one region of the SSL device to another region of the SSL device;
the first material includes an insulative material on the first semiconductor material, the insulative material having a plurality of openings extending between the first semiconductor material and a surface of the insulative material, at least one of the plurality of openings having a different shape or size from the other openings; and
the second material includes a conductive material on the insulative material, the conductive material having a first portion on the surface of the insulative material and a second portion in the openings of the insulative material.
3. An SSL device comprising:
a first semiconductor material;
a second semiconductor material spaced apart from the first semiconductor material;
an active region between the first and second semiconductor materials;
a first contact on the first semiconductor material;
a second contact on the second semiconductor material wherein the second contact is laterally spaced apart from the first contact;
wherein the first contact includes a first material having a first contact resistance and a second material having a second contact resistance, the first contact resistance being different from the second contact resistance;
wherein at least one of a shape, a size, a profile, and a distribution of the first and second materials varies from one region of the SSL device to another region of the SSL device;
the first material includes an insulative material on the first semiconductor material, the insulative material having a plurality of openings extending between the first semiconductor material and a surface of the insulative material, at least one of the plurality of openings having a different shape or size from the other openings;
the second material includes a conductive material on the insulative material, the conductive material having a first portion on the surface of the insulative material and a second portion in the openings of the insulative material;
wherein the insulative material includes—
a first region including a first number of openings; and
a second region spaced apart from the first region, wherein the second region includes a second number of openings different than the first number of openings.
4. The SSL device of claim 1 wherein:
the first material includes the insulative material on the first semiconductor material,
wherein the insulative material includes—
a first region including a first number of openings; and
a second region spaced apart from the first region, wherein the second region includes a second number of openings different than the first number of openings.