High power semiconductor laser diodes
View Patent ↗A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTE bar on a submount having a second coefficient CTE sub and a cooler having a third coefficient CTE cool . The submount/cooler assembly shows an effective fourth coefficient CTE eff differing from CTE bar . This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTE eff is selected to be either lower than both CTE bar and CTE cool or is selected to be between CTE bar and CTE cool . The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 μm thickness and a Mo layer of 100-400 μm thickness, or a single material with a varying CTE sub . Both result in a CTE sub varying across the submount's thickness.
1. A laser source of more than one W for generating light at a desired wavelength, said laser source comprising a bar of semiconductor laser diodes with an active region, a submount onto which said laser bar is affixed, and a cooling element onto which said submount is affixed, said submount/cooling element constituting a submount/cooler assembly,
said laser bar has a first coefficient of thermal expansion (CTE bar ),
said submount has a second coefficient of thermal expansion (CTE sub ),
said cooling element has a third coefficient of thermal expansion (CTE cool ), and
said submount/cooler assembly has an effective fourth coefficient of expansion (CTE eff )
wherein
said active region's semiconductor crystal lattice is deformed by mechanical stress executed upon said laser bar by said submount/cooler assembly.
2. The laser source according to claim 1 , wherein
the submount/cooler assembly has a fourth coefficient (CTE eff ) different from the laser bar's first coefficient (CTE bar ), CTE eff ±CTE bar , the difference being at least 5%, effecting a deformation of the crystal lattice of at least about 0.01%.
3. The laser source according to claim 2 , wherein
the fourth coefficient (CTE eff ) differs from the first coefficient (CTE bar ) by an amount of between 5% and 100%.
4. The laser source according to claim 1 , wherein
the second coefficient (CTE sub ) is selected higher than said first coefficient (CTE bar ) and smaller than or equal to said third coefficient (CTE cool ): CTE sub >CTE bar and CTE sub ≦CTE cool .
5. The laser source according to claim 1 , wherein
the second coefficient (CTE sub ) is selected less than both said first coefficient (CTE bar ) and said third coefficient (CTE cool ): CTE sub <CTE bar and CTE sub <CTE cool .
6. The laser source according to claim 1 , wherein
the second coefficient (CTE sub ) is constant across the submount's thickness.
7. The laser source according to claim 1 , wherein
the second coefficient (CTE sub ) varies across the submount's thickness.
8. The laser source according to claim 1 , wherein
the submount consists of or comprises at least two layers of different materials having different CTEs, resulting in a second coefficient (CTE sub ) which varies across the submount's thickness.
9. The laser source according to claim 8 , wherein
a first layer of the submount has a CTE subA and a second layer has a CTE subB , CTE subB being different from, preferably greater than, CTE subA , said first layer being located adjacent the laser bar and said second layer being located adjacent the cooling element.
10. The laser source according to claim 8 , wherein
the first layer of the submount is Cu of about 10-40 μm, preferably 20 μm, thickness and the second is Mo of about 100-400 μm, preferably 200 μm, thickness.
11. The laser source according to claim 8 , wherein
the submount consists of three layers, a first Cu layer of about 10-40 μm, preferably 15 μm, thickness, a Mo layer of about 100-400 μm, preferably 300 μm, thickness, and a second Cu layer of about 20-40 μm, preferably 15 μm, thickness.
12. The laser source according to claim 1 , wherein
both the laser bar and the cooling element are hard soldered to the submount, preferably using an AuSn hard solder and/or an SnAgCu hard solder.
13. The method of making a device according to claim 1 .