Fluorescent substance, process for production of fluorescent substance, light-emitting device and light-emitting module
The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.
1. A process for production of a fluorescent substance which emits luminescence having a peak in the wavelength range of 570 to 650 nm under excitation by light in the wavelength range of 250 to 500 nm, the process comprising:
mixing
a compound containing a metal element M 1 selected from the group consisting of tetravalent metal elements,
a compound containing a metal element M 2 selected from the group consisting of trivalent metal elements other than In(III) and Ga(III),
a compound containing a metal element M selected from the group consisting of metal elements, with the proviso that M is not M 1 , M 2 , In(III) and Ga(III),
a compound containing an emission center element EC, with the proviso that EC is not M, M 1 , M 2 , In(III) and Ga(III), and
a compound containing a metal element L selected from the group consisting of an oxide or nitride of In(III) and an oxide or nitride of Ga(III),
to prepare a material mixture; and
firing the material mixture to produce the fluorescent substance;
wherein
the fluorescent substance is of formula (I):
(M 1-x EC x ) a M 1 b M 2 L c O d N e (I)
wherein
0<x<0.4, 0.65<a<0.80, 2<b<3, 0<c<0.1, 0.3<d<0.6 and 4<e<5.
2. The process according to claim 1 , wherein M 1 is Si, M 2 is Al, and M is Sr.
3. A fluorescent substance which emits luminescence having a peak in the wavelength range of 570 to 650 nm under excitation by light in the wavelength range of 250 to 500 nm,
wherein the fluorescent substance is of formula (I):
(M 1-x EC x ) a M 1 b M 2 L c O d N e (I)
wherein
M 1 is a metal element selected from the group consisting of tetravalent metal elements,
M 2 is a metal element selected from the group consisting of trivalent metal elements other than In(III) and Ga(III),
L is a metal element selected from the group consisting of an oxide or nitride of In(III) and an oxide or nitride of Ga(III),
M is a metal element selected from the group consisting of metal elements other than M 1 , M 2 , In(III) and Ga(III),
EC is an emission center element, with the proviso that EC is not M, M 1 , M 2 , In(III) and Ga(III), and
0<x<0.4, 0.65<a<0.80, 2<b<3, 0<c<0.1, 0.3<d<0.6 and 4<e<5, and
the fluorescent substance is obtained by the process according to claim 1
wherein a crystal structure of the fluorescent substance is M 2 M 1 7 M 2 3 ON 13 .
4. A light-emitting device comprising:
a light-emitting element (S 1 ) giving off light in the wavelength range of 250 to 500 nm;
a fluorescent substance (R) which emits luminescence having a peak in the wavelength range of 570 to 650 nm under excitation by light given off from said light-emitting element (S 1 ); wherein the fluorescent substance (R) is the fluorescent substance according to claim 3 .
5. A light-emitting device comprising:
a light-emitting element (S 2 ) giving off light in the wavelength range of 250 to 430 nm;
a fluorescent substance (R) which is the fluorescent substance according to claim 3 ;
a fluorescent substance (G) which emits luminescence having a peak in the wavelength range of 490 to 580 nm under excitation by light given off from the light-emitting element (S 2 ); and
a fluorescent substance (B) which emits luminescence having a peak in the wavelength range of 400 to 490 nm under excitation by light given off from said light-emitting element (S 2 ).
6. A light-emitting device module which comprises a substrate and plural light-emitting devices provided thereon, each light-emitting device comprising:
a light-emitting element (S 1 ) giving off light in the wavelength range of 250 to 500 nm;
a fluorescent substance (R) which is the fluorescent substance according to claim 3 ;
and
a fluorescent substance (G) which emits luminescence having a peak in the wavelength range of 430 to 580 nm under excitation by light given off from the light-emitting element (S 1 ).
7. A light-emitting device module which comprises a substrate and plural light-emitting devices provided thereon, each light-emitting device comprising:
a light-emitting element (S 2 ) giving off light in the wavelength range of 250 to 430 nm;
a fluorescent substance (R) which is the fluorescent substance according to claim 3 ;
a fluorescent substance (G) which emits luminescence having a peak in the wavelength range of 490 to 580 nm under excitation by light given off from the light-emitting element (S 2 ); and
a fluorescent substance (B) which emits luminescence having a peak in the wavelength range of 400 to 490 nm under excitation by light given off from the light-emitting element (S 2 ).