Solid-state imaging device
Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
1. A solid-state imaging device comprising:
a semiconductor substrate of a first conductivity type, including a first face, a second face being opposite to the first face, and a trench extending from the first face into the semiconductor substrate;
a plurality of pixels provided in the semiconductor substrate, each of the pixels having a semiconductor region of a second conductivity type that converts incident light from the first face of the semiconductor substrate into signal charges and stores the signal charges;
a readout circuit provided on a side of the second face of the semiconductor substrate, and reading out the signal charges stored in the pixels; and
a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film that is buried in the trench in the semiconductor substrate, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retains fixed charges that are non-signal charges;
wherein
the semiconductor substrate is a silicon substrate,
the first insulating film is a silicon oxide film, and
the fixed charge film is an oxide dielectric film containing at least one of hafnium (Hf), zirconium (Zr), and titanium (Ti).
2. The device according to claim 1 , further comprising
an impurity region of the first conductivity type that is provided in the semiconductor substrate to be in contact with a bottom face of the pixel separation structure, and has a higher density than the semiconductor substrate.
3. The device according to claim 1 , wherein
the stack film of the pixel separation structure further includes a second insulating film provided in the trench to cover the fixed charge film, and a polycrystalline silicon electrode film provided in the trench to cover the second insulating film and having a voltage applied thereto.
4. The device according to claim 1 , wherein
the stack film of the pixel separation structure further includes a low refractive index film provided in the trench to cover the fixed charge film and having a lower refractive index than the semiconductor substrate.
5. The device according to claim 1 , wherein the stack film of the pixel separation structure extends to a light incidence face side of each of the pixels.
6. A solid-state imaging device comprising:
a semiconductor substrate of a first conductivity type, including a first face, a second face being opposite to the first face, and a trench extending from the first face into the semiconductor substrate;
a plurality of pixels provided in the semiconductor substrate, each of the pixels having a semiconductor region of a second conductivity type that converts incident light from a side of the first face of the semiconductor substrate into signal charges and stores the signal charges;
a readout circuit provided on the side of the first face of the semiconductor substrate, and reading out the signal charges stored in the pixels; and
a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film that is buried in the trench in the semiconductor substrate, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges;
wherein
the semiconductor substrate is a silicon substrate,
the first insulating film is a silicon oxide film, and
the fixed charge film is an oxide dielectric film containing at least one of hafnium (Hf), zirconium (Zr), and titanium (Ti).
7. The device according to claim 6 , further comprising
an impurity region of the first conductivity type that is provided in the semiconductor substrate to be in contact with an upper face of the pixel separation structure, and has a higher density than the semiconductor substrate.
8. The device according to claim 6 , wherein
the stack film of the pixel separation structure further includes a second insulating film provided in the trench to cover the fixed charge film, and a polycrystalline silicon electrode film provided in the trench to cover the second insulating film and having a voltage applied thereto.
9. The device according to claim 6 , wherein
the stack film of the pixel separation structure further includes a low refractive index film provided in the trench to cover the fixed charge film and having a lower refractive index than the semiconductor substrate.