Power semiconductor devices having termination structures
In one general aspect, a termination structure can include a plurality of pillars of a first conductivity type formed inside a termination region of a second conductivity type opposite the first conductivity type where the plurality of pillars define a plurality of concentric rings surrounding an active area of a semiconductor device. The termination structure can include a conductive field plate where the plurality of pillars includes a first pillar coupled to the conductive field plate. The termination structure can include a dielectric layer where the plurality of pillars include a second pillar insulated by the dielectric layer from a portion of the conductive field plate disposed directly above the second pillar included in the plurality of pillars.
1. A termination structure, comprising:
a plurality of pillars of a first conductivity type formed inside a termination region of a second conductivity type opposite the first conductivity type, the plurality of pillars defining a plurality of concentric rings surrounding an active area of a semiconductor device;
a conductive field plate, the plurality of pillars including a first pillar coupled to the conductive field plate; and
a dielectric layer, the plurality of pillars including a second pillar insulated by the dielectric layer from a portion of the conductive field plate disposed directly above the second pillar included in the plurality of pillars.
2. The termination structure of claim 1 , wherein the conductive field plate is a first conductive field plate coupled to the first pillar, the conductive field plate is made of a conductive material that covers and is dielectrically isolated from the second pillar by the dielectric layer,
the termination structure further comprising:
a second conductive field plate coupled to a third pillar from the plurality of pillars.
3. The termination structure of claim 1 , wherein the conductive field plate is coupled to ground.
4. The termination structure of claim 1 , wherein a center-to-center spacing between each pair of adjacent pillars from the plurality of pillars varies with a distance from an edge of the active area.
5. The termination structure of claim 1 , wherein a center-to-center spacing between each pair of adjacent pillars from the plurality of pillars increases with a distance from an edge of the active area.
6. The termination structure of claim 1 , wherein a width of each pillar from the plurality of pillars varies with a distance from an edge of the active area.
7. The termination structure of claim 1 , wherein a width of each pillar from the plurality of pillars decreases with a distance from an edge of the active area.
8. The termination structure of claim 1 , wherein a top surface of the second pillar from the plurality of pillars is covered by the dielectric layer.
9. The termination structure of claim 1 , wherein the conductive field plate coupled to the first pillar extends over and is insulated from the second pillar from the plurality of pillars by the dielectric layer.
10. The termination structure of claim 1 , wherein the first pillar has a length at least five times greater than a width of the first pillar.
11. The termination structure of claim 1 , wherein the plurality of pillars are p-type pillars, the p-type pillars decrease in charge with distance from the active area such that a net n-type balance charge is formed in at least a portion of the termination region.
12. The termination structure of claim 1 , wherein at least a portion of the termination region of the second conductivity type is an epitaxial layer, the first pillar extends to a depth more than half of a thickness of the epitaxial layer.
13. An apparatus, comprising:
a first conductive field plate;
a second conductive field plate;
a dielectric layer; and
a plurality of pillars of a first conductivity type formed inside a termination region of a second conductivity type opposite the first conductivity type, the plurality of pillars defining a plurality of concentric rings disposed outside of an active area of a semiconductor device,
the plurality of pillars including a first pillar coupled to the first conductive field plate and including a second pillar coupled to the second conductive field plate, the plurality of pillars including a third pillar isolated from the second conductive field plate by the dielectric layer, the dielectric layer being contiguous between the first pillar included in the plurality of pillars and the second pillar included in the plurality of pillars, the plurality of pillars being p-type pillars, the p-type pillars decreasing in charge with distance from the active area such that a net n-type balance charge is formed in at least a portion of the termination region.
14. The apparatus of claim 13 , wherein at least a portion of the termination region of the second conductivity type is an epitaxial layer, the first pillar and the third pillar each extend to a depth more than half of a thickness of the epitaxial layer.
15. A termination structure, comprising:
a conductive field plate;
a plurality of pillars of a first conductivity type inside a termination region of a second conductivity type opposite the first conductivity type, the plurality of pillars defining a plurality of concentric rings surrounding an active area of a semiconductor device;
a dielectric layer, the plurality of pillars including a first pillar coupled to the conductive field plate and including a second pillar disposed between first pillar included in the plurality of pillars and a third pillar included in the plurality of pillars, the second pillar included in the plurality of pillars being isolated from the conductive field plate by the dielectric layer, the dielectric layer being contiguous between the first pillar included in the plurality of pillars and the third pillar included in the plurality of pillars;
a first mesa region disposed between the first pillar included in the plurality of pillars and the second pillar included in the plurality of pillars; and
a second mesa region disposed between the second pillar included in the plurality of pillars and the third pillar included in the plurality of pillars, the first mesa region having a width greater than a width of the second mesa region.
16. The termination structure of claim 15 , wherein the plurality of pillars are p-type pillars, the p-type pillars decrease in charge with distance from the active area such that a net n-type balance charge is formed in at least a portion of the termination region.
17. The apparatus of claim 13 , further comprising:
a first mesa region disposed between the first pillar included in the plurality of pillars and the second pillar included in the plurality of pillars; and
a second mesa region disposed between the second pillar included in the plurality of pillars and the third pillar included in the plurality of pillars, the first mesa region having a width greater than a width of the second mesa region.
18. The apparatus of claim 13 , wherein the second pillar is a last pillar from the plurality of pillars.
19. The termination structure of claim 15 , wherein the plurality of pillars define a charge balance with the active area such that a breakdown voltage of the termination region is substantially equal to a breakdown voltage of the active area.
20. The termination structure of claim 15 , wherein a distance between a pair of pillars from the plurality of pillars is approximately twice a distance between the plurality of pillars and an end of an active trench in the active area.