IP Library Assignment 033833/0697
Patent Assignment
Reel/Frame 033833/0697

Assignment of Assignor's Interest

Recorded: 2014-09-26 Pages: 13
Assignors
CHALLA, ASHOK
Executed: 2005-03-24
ELBANHAWY, ALAN
Executed: 2005-03-30
GREBS, THOMAS E.
Executed: 2005-03-18
KRAFT, NATHAN L.
Executed: 2005-03-18
PROBST, DEAN E.
Executed: 2005-03-29
RIDLEY, RODNEY S.
Executed: 2005-03-18
SAPP, STEVEN P.
Executed: 2005-03-31
WANG, QI
Executed: 2005-03-23
YUN, CHONGMAN
Executed: 2005-03-16
LEE, J.G.
Executed: 2005-03-16
WILSON, PETER H.
Executed: 2005-03-17
YEDINAK, JOSEPH A.
Executed: 2005-03-18
JUNG, J.Y.
Executed: 2005-03-16
JANG, H.C.
Executed: 2005-03-16
SANI, BABAK S.
Executed: 2005-04-08
STOKES, RICHARD
Executed: 2005-03-18
DOLNY, GARY M.
Executed: 2005-03-30
MYTYCH, JOHN
Executed: 2005-03-21
LOSEE, BECKY
Executed: 2005-03-24
SELSLEY, ADAM
Executed: 2005-03-02
HERRICK, ROBERT
Executed: 2005-03-24
MURPHY, JAMES J.
Executed: 2005-03-29
MADSON, GORDON K.
Executed: 2005-03-24
MARCHANT, BRUCE D.
Executed: 2005-03-28
REXER, CHRISTOPHER L.
Executed: 2005-03-18
KOCON, CHRISTOPHER B.
Executed: 2005-03-17
WOOLSEY, DEBRA S
Executed: 2005-03-24
Assignee
FAIRCHILD SEMICONDUCTOR CORPORATION
82 RUNNING HILL ROAD, MS 35-4E, SOUTH PORTLAND, MAINE, 04106
Covered Properties (6)
Methods of Forming Inter-Poly Dielectric (Ipd) Layers in Power Semiconductor Devices
Patent: 8,143,123 →
Application: 12/041,546 →
Publication: US 2008/0199997
Power Semiconductor Devices Having Termination Structures
Patent: 8,786,045 →
Application: 12/878,429 →
Publication: US 2011/0001189
Methods of Manufacturing Power Semiconductor Devices with Trenched Shielded Split Gate Transistor
Patent: 8,889,511 →
Application: 13/219,229 →
Publication: US 2011/0312138
Methods of Manufacturing Power Semiconductor Devices with Shield and Gate Contacts
Patent: 8,129,245 →
Application: 13/219,281 →
Publication: US 2011/0312166
Methods Related to Power Semiconductor Devices with Thick Bottom Oxide Layers
Patent: 8,936,985 →
Application: 13/418,128 →
Publication: US 2012/0220091
Accumulation-Mode Field Effect Transistor with Improved Current Capability
Patent: 9,368,587 →
Application: 14/292,894 →
Publication: US 2014/0264573
Related Assignments (8)
Other recorded transfers of the patents in this record — the chain of ownership.
Patent Security Agreement Sep 19, 2016
From: FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 040075/0644 →
Assignment of Assignor's Interest Oct 11, 2016
From: SHENOY, PRAVEEN MURALEEDHARAN
To: FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 039981/0585 →
Assignment of Assignor's Interest Aug 3, 2021
From: FAIRCHILD SEMICONDUCTOR CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 057694/0374 →
Release of Security Interest Oct 28, 2021
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 057969/0206 →
Security Interest Nov 12, 2021
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 058871/0799 →
Release of Security Interest in Patents Recorded at Reel 040075, Frame 0644 Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0536 →
Release of Security Interest in Patents Recorded at Reel 058871, Frame 0799 Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 065653/0001 →
Security Interest Jul 13, 2023
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; GTAT CORPORATION
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064271/0971 →