IP Library › Assignment 064271/0971
Patent Assignment
Reel/Frame 064271/0971

SECURITY INTEREST

Recorded: 2023-07-13 Received: 2023-07-13 Pages: 24
Assignors
GTAT CORPORATION
Executed: 2023-07-06
Assignee
JPMORGAN CHASE BANK, N.A.
4 CHASE METROTECH CENTER, MC: NY1-C413, BROOKLYN, NY, 11245-0001, UNITED STATES
Covered Applications (100)
SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS
App. No. 18/322,249
→
MOSFET DEVICE WITH UNDULATING CHANNEL
App. No. 18/301,146
→
INSULATED GATED FIELD EFFECT TRANSISTOR STRUCTURE HAVING SHIELDED SOURCE AND METHOD
App. No. 18/188,233
→
POWER DEVICE WITH GRADED CHANNEL
App. No. 18/182,140
→
SIC MOSFET SEMICONDUCTOR PACKAGES AND RELATED METHODS
App. No. 18/172,641
→
SEMICONDUCTOR DEVICE MODULES
App. No. 18/154,303
→
CURRENT SHARING MISMATCH REDUCTION IN POWER SEMICONDUCTOR DEVICE MODULES
App. No. 18/154,722
→
PACKAGE INCLUDING MULTIPLE SEMICONDUCTOR DEVICES
App. No. 18/055,139
→
SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE
App. No. 17/931,770
→
SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE
App. No. 17/816,455
→
SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE
App. No. 17/816,144
→
DIODES INCLUDING MULTIPLE SCHOTTKY CONTACTS
App. No. 17/805,824
→
SINGULATION OF SILICON CARBIDE SEMICONDUCTOR WAFERS
App. No. 17/659,388
→
FLEXIBLE CLIP WITH ALIGNER STRUCTURE
App. No. 17/658,885
→
CLIPS FOR SEMICONDUCTOR PACKAGE AND RELATED METHODS
App. No. 17/651,621
→
INSULATED GATED FIELD EFFECT TRANSISTOR STRUCTURE HAVING SHIELDED SOURCE AND METHOD
App. No. 17/456,266
→
SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS
App. No. 17/450,734
→
SILICON CARBIDE FIELD-EFFECT TRANSISTORS
App. No. 17/448,916
→
SEMICONDUCTOR SUBSTRATE CRACK MITIGATION SYSTEMS AND RELATED METHODS
App. No. 17/305,624
→
SEMICONDUCTOR PACKAGE AND RELATED METHODS
App. No. 17/316,367
→
VERTICAL TRANSISTORS WITH GATE CONNECTION GRID
App. No. 17/194,846
→
PACKAGE INCLUDING MULTIPLE SEMICONDUCTOR DEVICES
App. No. 17/248,541
→
MOSFET DEVICE WITH UNDULATING CHANNEL
App. No. 17/248,160
→
SEMICONDUCTOR SUBSTRATE SINGULATION SYSTEMS AND RELATED METHODS
App. No. 17/136,243
→
APPARATUS FOR PRODUCING BULK SILICON CARBIDE
App. No. 17/107,103
→
SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE
App. No. 16/949,395
→
METHOD FOR PRODUCING BULK SILICON CARBIDE
App. No. 17/067,040
→
METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEED
App. No. 17/021,691
→
TUNABLE TERAHERTZ DETECTOR
App. No. 16/948,285
→
SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS
App. No. 17/014,890
→
INSULATED GATED FIELD EFFECT TRANSISTOR STRUCTURE HAVING SHIELDED SOURCE AND METHOD
App. No. 16/947,586
→
WAFER THINNING SYSTEMS AND RELATED METHODS
App. No. 16/872,971
→
SEMICONDUCTOR SUBSTRATE DIE SAWING SINGULATION SYSTEMS AND METHODS
App. No. 16/867,836
→
SEMICONDUCTOR WAFER THINNING SYSTEMS AND RELATED METHODS
App. No. 16/852,146
→
RADIO FREQUENCY SWITCH
App. No. 16/844,149
→
METHOD FOR PRODUCING BULK SILICON CARBIDE BY SUBLIMATION OF A SILICON CARBIDE PRECURSOR PREPARED FROM SILICON AND CARBON PARTICLES OR PARTICULATE SILICON CARBIDE
App. No. 16/803,037
→
SEMICONDUCTOR SUBSTRATE CRACK MITIGATION SYSTEMS AND RELATED METHODS
App. No. 16/784,687
→
SHORT-CIRCUIT PERFORMANCE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
App. No. 16/680,846
→
CLIPS FOR SEMICONDUCTOR PACKAGE AND RELATED METHODS
App. No. 16/677,103
→
POWER DEVICE WITH GRADED CHANNEL
App. No. 16/675,813
→
SEMICONDUCTOR SUBSTRATE DIE SAWING SINGULATION SYSTEMS AND METHODS
App. No. 16/674,780
→
SILICON CARBIDE FIELD-EFFECT TRANSISTORS
App. No. 16/667,664
→
SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS
App. No. 16/581,964
→
SIC MOSFET SEMICONDUCTOR PACKAGES AND RELATED METHODS
App. No. 16/539,319
→
SEMICONDUCTOR PACKAGE AND RELATED METHODS
App. No. 16/521,695
→
INSULATED GATED FIELD EFFECT TRANSISTOR STRUCTURE HAVING SHIELDED SOURCE AND METHOD
App. No. 16/515,334
→
RADIO FREQUENCY SWITCH
App. No. 16/514,174
→
SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS
App. No. 16/512,780
→
TRENCH SEMICONDUCTOR DEVICE HAVING SHAPED GATE DIELECTRIC AND GATE ELECTRODE STRUCTURES AND METHOD
App. No. 16/456,290
→
SEMICONDUCTOR DEVICE ASSEMBLIES
App. No. 16/456,161
→
SEMICONDUCTOR WAFER THINNING SYSTEMS AND RELATED METHODS
App. No. 16/448,540
→
PACKAGE INCLUDING MULTIPLE SEMICONDUCTOR DEVICES
App. No. 16/429,366
→
LOW TURN-ON VOLTAGE SILICON CARBIDE RECTIFIERS
App. No. 16/124,413
→
SHORT-CIRCUIT PERFORMANCE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
App. No. 16/059,223
→
CARBON-CONTROLLED OHMIC CONTACT LAYER FOR BACKSIDE OHMIC CONTACT ON A SILICON CARBIDE POWER SEMICONDUCTOR DEVICE
App. No. 16/052,876
→
AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER DEVICE
App. No. 16/035,883
→
SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS
App. No. 15/994,864
→
SEMICONDUCTOR SUBSTRATE SINGULATION SYSTEMS AND RELATED METHODS
App. No. 15/986,403
→
HYBRID GATE DIELECTRICS FOR SEMICONDUCTOR POWER DEVICES
App. No. 15/982,934
→
SINGULATION OF SILICON CARBIDE SEMICONDUCTOR WAFERS
App. No. 15/974,984
→
WAFER THINNING SYSTEMS AND RELATED METHODS
App. No. 15/964,464
→
SEMICONDUCTOR SUBSTRATE CRACK MITIGATION SYSTEMS AND RELATED METHODS
App. No. 15/964,484
→
SEMICONDUCTOR WAFER THINNING SYSTEMS AND RELATED METHODS
App. No. 15/958,123
→
ELECTRONIC DEVICE INCLUDING A TRANSISTOR INCLUDING III-V MATERIALS AND A PROCESS OF FORMING THE SAME
App. No. 15/916,428
→
TRENCH SEMICONDUCTOR DEVICE HAVING SHAPED GATE DIELECTRIC AND GATE ELECTRODE STRUCTURES AND METHOD
App. No. 15/883,500
→
SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE
App. No. 15/868,747
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SILICON-CARBIDE TRENCH GATE MOSFETS AND METHODS OF MANUFACTURE
App. No. 15/858,406
→
PACKAGE INCLUDING MULTIPLE SEMICONDUCTOR DEVICES
App. No. 15/789,254
→
AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER DEVICE
App. No. 15/677,400
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METHOD OF FORMING TRENCH SEMICONDUCTOR DEVICE HAVING MULTIPLE TRENCH DEPTHS
App. No. 15/627,281
→
SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING
App. No. 15/626,690
→
SEMICONDUCTOR PACKAGE AND RELATED METHODS
App. No. 15/623,580
→
Determining Device In-Range Proximity
App. No. 15/495,176
→
SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE
App. No. 15/440,967
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SILICON-CARBIDE TRENCH GATE MOSFETS
App. No. 15/275,184
→
SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE
App. No. 15/206,574
→
HYBRID GATE DIELECTRICS FOR SEMICONDUCTOR POWER DEVICES
App. No. 15/158,214
→
AVALANCHE-RUGGED SILICON CARBIDE (SIC) POWER SCHOTTKY RECTIFIER
App. No. 15/079,586
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SILICON CARBIDE (SIC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING
App. No. 14/980,708
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LAUNCHING AN APPLICATION
App. No. 14/935,304
→
SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE
App. No. 14/816,520
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SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE SAME
App. No. 14/812,200
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SCHOTTKY-BARRIER DEVICE AND RELATED SEMICONDUCTOR PRODUCT
App. No. 14/750,682
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SIC POWER DEVICE HAVING A HIGH VOLTAGE TERMINATION
App. No. 14/750,655
→
SILICON-CARBIDE TRENCH GATE MOSFETS
App. No. 14/744,958
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CONFIGURATION OF PORTIONS OF A POWER DEVICE WITHIN A SILICON CARBIDE CRYSTAL
App. No. 14/671,495
→
SILICON CARBIDE POWER BIPOLAR DEVICES WITH DEEP ACCEPTOR DOPING
App. No. 14/671,561
→
TRENCH SEMICONDUCTOR DEVICE HAVING MULTIPLE TRENCH DEPTHS AND METHOD
App. No. 14/640,240
→
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
App. No. 14/635,669
→
SUBSTRATE STRUCTURES AND METHODS OF MANUFACTURE
App. No. 14/534,482
→
SIC BIPOLAR JUNCTION TRANSISTOR WITH REDUCED CARRIER LIFETIME IN COLLECTOR AND A DEFECT TERMINATION LAYER
App. No. 14/388,585
→
BULK SILICON CARBIDE HAVING LOW DEFECT DENSITY
App. No. 14/478,674
→
METHOD FOR PRODUCING BULK SILICON CARBIDE
App. No. 14/478,432
→
APPARATUS FOR PRODUCING BULK SILICON CARBIDE
App. No. 14/478,608
→
METHOD FOR PRODUCING BULK SILICON CARBIDE BY SUBLIMATION OF A SILICON CARBIDE PRECURSOR PREPARED FROM SILICON AND CARBON PARTICLES OR PARTICULATE SILICON CARBIDE
App. No. 14/478,512
→
METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEED
App. No. 14/478,567
→
ACCUMULATION-MODE FIELD EFFECT TRANSISTOR WITH IMPROVED CURRENT CAPABILITY
App. No. 14/292,894
→
METHODS OF LASER MARKING SEMICONDUCTOR SUBSTRATES
App. No. 14/200,283
→
BIPOLAR JUNCTION TRANSISTOR IN SILICON CARBIDE WITH IMPROVED BREAKDOWN VOLTAGE
App. No. 14/068,941
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TIME-ADVANCED RANDOM ACCESS CHANNEL TRANSMISSION
App. No. 13/984,617
→