Current sharing mismatch reduction in power semiconductor device modules
In a general aspect, a power module includes a substrate having first, second and third patterned metal layers disposed on a surface of the substrate. The module also includes a first high-side transistor disposed on the first patterned metal layer, a second high-side transistor disposed on the first patterned metal layer, a first conductive clip electrically coupling the first high-side transistor with the second patterned metal layer, and a second conductive clip electrically coupling the second high-side transistor with the second patterned metal layer. The module further includes a first low-side transistor disposed on the second patterned metal layer, a second low-side transistor disposed on the second patterned metal layer, a third conductive clip electrically coupling the first low-side transistor with the third patterned metal layer, and a fourth conductive clip electrically coupling the second low-side transistor with the third patterned metal layer.
1 . A half-bridge circuit power module comprising:
a substrate including:
a first patterned metal layer disposed on a surface of the substrate;
a second patterned metal layer disposed on the surface of the substrate; and
a third patterned metal layer disposed on the surface of the substrate;
a first high-side transistor disposed on the first patterned metal layer;
a second high-side transistor disposed on the first patterned metal layer;
a first conductive clip electrically coupling the first high-side transistor with the second patterned metal layer;
a second conductive clip electrically coupling the second high-side transistor with the second patterned metal layer;
a first low-side transistor disposed on the second patterned metal layer;
a second low-side transistor disposed on the second patterned metal layer;
a third conductive clip electrically coupling the first low-side transistor with the third patterned metal layer; and
a fourth conductive clip electrically coupling the second low-side transistor with the third patterned metal layer.
2 . The half-bridge circuit power module of claim 1 , wherein:
the first patterned metal layer is electrically coupled with a DC+ terminal of the half-bridge circuit power module;
the second patterned metal layer is electrically coupled with an output terminal of the half-bridge circuit power module;
the third patterned metal layer is electrically coupled with an DC− terminal of the half-bridge circuit power module.
3 . The half-bridge circuit power module of claim 2 , wherein:
the first conductive clip electrically couples a source terminal of the first high-side transistor with the output terminal;
the second conductive clip electrically couples a source terminal of the second high-side transistor with the output terminal;
the third conductive clip electrically couples a source terminal of the first low-side transistor with the DC− terminal; and
the fourth conductive clip electrically couples a source terminal of the second low-side transistor with the DC− terminal.
4 . The half-bridge circuit power module of claim 2 , wherein:
the DC+ terminal is a first DC+ terminal; and
the substrate further includes a fourth patterned metal layer disposed on the surface of the substrate, the fourth patterned metal layer being electrically coupled with a second DC+ terminal,
the half-bridge circuit power module further comprising:
a third high-side transistor having a drain terminal disposed on the fourth patterned metal layer;
a fourth high-side transistor having a drain terminal disposed on the fourth patterned metal layer;
a fifth conductive clip electrically coupling a source terminal of the third high-side transistor with the output terminal; and
a sixth conductive clip electrically coupling the fourth high-side transistor with the output terminal.
5 . The half-bridge circuit power module of claim 4 , wherein:
the first DC+ terminal is electrically coupled with the first patterned metal layer via a first conductive post; and
the second DC+ terminal is electrically coupled with the fourth patterned metal layer via a second conductive post.
6 . The half-bridge circuit power module of claim 4 , wherein:
the fifth conductive clip electrically couples the source terminal of the third high-side transistor with the output terminal via a fifth patterned metal layer disposed on the surface of the substrate.
7 . The half-bridge circuit power module of claim 5 , wherein the output terminal is:
electrically coupled with the second patterned metal layer via a first conductive post; and
electrically coupled with the fourth patterned metal layer via a second conductive post.
8 . The half-bridge circuit power module of claim 2 , wherein the substrate further includes a fourth patterned metal layer electrically coupled with the output terminal,
the half-bridge circuit power module further comprising:
a third low-side transistor disposed on the fourth patterned metal layer; and
a fourth low-side transistor disposed on the fourth patterned metal layer,
the third conductive clip further electrically coupling the third low-side transistor to the third patterned metal layer, and
the fourth conductive clip further electrically coupling the fourth low-side transistor to the third patterned metal layer.
9 . The half-bridge circuit power module of claim 8 , where the DC− terminal is electrically coupled to the third patterned metal layer via a conductive post, the conductive post being disposed between the third conductive clip and the fourth conductive clip.
10 . The half-bridge circuit power module of claim 8 , further comprising:
a fifth low-side transistor disposed on the first patterned metal layer;
a sixth low-side transistor disposed on the fourth patterned metal layer;
a seventh low-side transistor disposed on the first patterned metal layer; and
an eighth low-side transistor disposed on the fourth patterned metal layer;
the third conductive clip further electrically coupling the fifth low-side transistor and the sixth low-side transistor to the third patterned metal layer, and
the fourth conductive clip further electrically coupling the sixth low-side transistor and the seventh low-side transistor to the third patterned metal layer.
11 . The half-bridge circuit power module of claim 1 , wherein:
respective drain terminals of the first high-side transistor and the second high-side transistor are disposed on and electrically coupled with the first patterned metal layer; and
respective drain terminals of the first low-side transistor and the second low-side transistor are disposed on and electrically coupled with the second patterned metal layer.
12 . A half-bridge circuit power module comprising:
a substrate including:
a first patterned metal layer disposed on a surface of the substrate and electrically coupled with an output terminal;
a second patterned metal layer disposed on the surface of the substrate and electrically coupled with a DC− terminal;
a third patterned metal layer disposed on the surface of the substrate and electrically coupled with the output terminal;
a first low-side transistor disposed on the first patterned metal layer;
a second low-side transistor disposed on the first patterned metal layer;
a third low-side transistor disposed on the third patterned metal layer;
a fourth low-side transistor disposed on the third patterned metal layer;
a conductive clip electrically coupling the first low-side transistor, the second low-side transistor, the third low-side transistor and the fourth low-side transistor with the second patterned metal layer.
13 . The half-bridge circuit power module of claim 12 , wherein:
the conductive clip includes an opening through which the second patterned metal layer is exposed; and
the DC− terminal is electrically coupled with the second patterned metal layer via a conductive post disposed within the opening of the conductive clip.
14 . The half-bridge circuit power module of claim 12 , wherein:
the output terminal is coupled with the first patterned metal layer via a first conductive post; and
the output terminal is coupled with the third patterned metal layer via a second conductive post.
15 . The half-bridge circuit power module of claim 12 , wherein the substrate further includes:
a fourth patterned metal layer disposed on the surface of the substrate; and
a fifth patterned metal layer disposed on the surface of the substrate;
the half-bridge circuit power module further comprising:
a first high-side transistor disposed on the fourth patterned metal layer;
a second high-side transistor disposed on the fourth patterned metal layer;
a third high-side transistor disposed on the fifth patterned metal layer;
a fourth high-side transistor disposed on the fifth patterned metal layer;
a second conductive clip electrically coupling the first high-side transistor with the first patterned metal layer;
a third conductive clip electrically coupling the second high-side transistor with the first patterned metal layer;
a fourth conductive clip electrically coupling the third high-side transistor with the third patterned metal layer; and
a fifth conductive clip electrically coupling the fourth high-side transistor with the third patterned metal layer.
16 . The half-bridge circuit power module of claim 15 , wherein:
the fourth patterned metal layer is electrically coupled with a first DC+ terminal via a first conductive post; and
the fifth patterned metal layer is electrically coupled with a second DC+ terminal via a second conductive post.
17 . A half-bridge circuit power module comprising:
a substrate including:
a first patterned metal layer disposed on a surface of the substrate and electrically coupled with an output terminal;
a second patterned metal layer disposed on the surface of the substrate and electrically coupled with a DC− terminal;
a third patterned metal layer disposed on the surface of the substrate and electrically coupled with the output terminal;
a first low-side transistor disposed on the first patterned metal layer;
a second low-side transistor disposed on the first patterned metal layer;
a third low-side transistor disposed on the first patterned metal layer;
a fourth low-side transistor disposed on the third patterned metal layer;
a fifth low-side transistor disposed on the third patterned metal layer;
a sixth low-side transistor disposed on the third patterned metal layer;
a first conductive clip electrically coupling the first low-side transistor and the fourth low-side transistor to the second patterned metal layer;
a second conductive clip electrically coupling the second low-side transistor and the fifth low-side transistor to the second patterned metal layer; and
a third conductive clip electrically coupling the third low-side transistor and the sixth low-side transistor to the second patterned metal layer.
18 . The half-bridge circuit power module of claim 17 , wherein the second patterned metal layer is electrically coupled with a DC− terminal.
19 . The half-bridge circuit power module of claim 18 , wherein the DC− terminal is electrically coupled with the second patterned metal layer via:
a first conductive post disposed on the second patterned metal layer between the first conductive clip and the second conductive clip, the second conductive clip being closer to the DC− terminal than the first conductive clip; and
a second conductive post disposed on the second patterned metal layer between third second conductive clip and the third conductive clip, the third conductive clip being closer to the DC− terminal than the second conductive clip.
20 . The half-bridge circuit power module of claim 19 , wherein a surface of the second conductive post coupled with the second patterned metal layer has an area that is smaller than an area of a surface of the first conductive post coupled with the second patterned metal layer.