Semiconductor devices and methods of making the same
View Patent ↗In one embodiment, methods for making semiconductor devices are disclosed.
1. A semiconductor substrate comprising:
a base substrate having a first semiconductor material;
a buried structure; and
a device layer having a second semiconductor material, wherein the buried structure is disposed between the base substrate and the device layer,
wherein the buried structure has a thickness equal to about k×λ laser /(2×n), wherein:
λ laser is a wavelength of peak emission;
k is an integer greater than zero (1, 2, 3 . . . ); and
n is an index of refraction for the buried structure.
2. The substrate of claim 1 , wherein the base substrate is silicon, SiC, GaN, or sapphire.
3. The substrate of claim 1 , wherein the buried structure is an insulating material.
4. The substrate of claim 1 , wherein the buried structure is silicon dioxide, AlGaN, or AlN.
5. The substrate of claim 1 , wherein the device layer is silicon, SiC, GaN, or sapphire.
6. The substrate of claim 1 , wherein the device layer is monocrystalline.
7. The substrate of claim 1 , wherein the thickness of the buried structure is about 0.001 μm to about 5 μm.
8. The substrate of claim 1 , wherein a thickness of the device layer is about 0.1 μm to about 500 μm.
9. The substrate of claim 1 , wherein the wavelength of peak emission for the light applied to inscribe the semiconductor substrate is about 200 nm to about 1,500 nm.
10. The substrate of claim 1 , wherein the thickness of the buried structure is about 365 nm, 740 nm or 1095 nm.
11. The substrate claim 1 , where the base substrate is silicon, the buried structure is silicon dioxide, and the device layer is silicon.
12. A semiconductor substrate comprising:
a base substrate having a first semiconductor material;
a buried structure; and
a device layer having a second semiconductor material, wherein the buried structure is disposed between the base substrate and the device layer,
wherein the buried structure has a thickness equal to about k×λ/(2×n), wherein:
λ is about 530 nm or about 1060 nm;
k is an integer greater than zero (1, 2, 3 . . . ); and
n is an index of refraction for the buried structure.
13. The substrate of claim 12 , wherein the buried structure is an insulating material.
14. The substrate of claim 12 , wherein the buried structure is silicon dioxide, AlGaN, or AlN.
15. The substrate of claim 12 , wherein the buried structure is silicon dioxide.
16. The substrate of claim 15 , wherein the base substrate is silicon, SiC, GaN, or sapphire.
17. The substrate of claim 12 , wherein the thickness of the buried structure is equal to about k×367 nm.
18. The substrate of claim 12 , wherein the device layer is monocrystalline.
19. The substrate of claim 12 , wherein a thickness of the device layer is about 0.1 μm to about 500 μm.
20. The substrate claim 12 , where the base substrate is silicon, the buried structure is silicon dioxide, and the device layer is silicon.