Configuration of portions of a power device within a silicon carbide crystal

1. An apparatus for a silicon carbide (SiC) crystal semiconductor device, comprising:

a silicon carbide (SiC) crystal having a top surface aligned along a plane, the SiC crystal having an off-orientation direction from a basal (0001) plane; and

a semiconductor device having at least a portion defined within the SiC crystal, the semiconductor device being a vertically oriented device, the semiconductor device having an outer perimeter, the outer perimeter having a first side aligned along the off-orientation direction and a second side aligned along a direction non-parallel to the off-orientation direction, the first side of the outer perimeter of the semiconductor device having a length longer than the second side of the outer perimeter of the semiconductor device.

2. The apparatus of claim 1 , wherein the second side is aligned along a direction substantially orthogonal to a direction of a direction of propagation of a stacking fault.

3. The apparatus of claim 1 , wherein the semiconductor device is a vertically oriented device having a minimum rated voltage of 400 Volts and a minimum rated current of 4 Amperes.

4. The apparatus of claim 1 , wherein the outer perimeter of the semiconductor device is defined by a region free of minority carriers when the semiconductor device is operating.

5. The apparatus of claim 1 , wherein the outer perimeter of the semiconductor device is defined by a termination region of the semiconductor device.

6. The apparatus of claim 1 , wherein the first side has a length that is at least 1.5 longer than a length of the second side.

7. The apparatus of claim 1 , wherein the first side is orthogonal to the second side.

8. The apparatus of claim 1 , wherein an entirety of the first side is longer than the entirety of the second side.

9. An apparatus for a silicon carbide (SiC) crystal semiconductor device, comprising:

a first portion of a semiconductor device having at least a portion defined within a silicon carbide crystal and having a length greater than a width, the length of the first portion of the semiconductor device being aligned along an off-orientation direction from the basal (0001) plane of the silicon carbide crystal, the semiconductor device being a vertical device;

a second portion of a semiconductor device having a length greater than a width, the length of the second portion of the semiconductor device being aligned parallel to the first portion of the semiconductor device; and

a termination region disposed at least partially around the first portion of the semiconductor device and at least partially around the second portion of the semiconductor device.

10. The apparatus of claim 9 , wherein the first semiconductor device is separated from the second semiconductor device by a region excluding a drift region such that a stacking fault included in the first semiconductor device is prevented from propagating to the second semiconductor device.

11. The apparatus of claim 9 , wherein the first portion of the semiconductor device is electrically coupled to the second portion of the semiconductor device via an interconnect.

12. The apparatus of claim 9 , wherein the first semiconductor device is separated from the second semiconductor device by a stacking fault separation region substantially excluding minority carriers that facilitate propagation of a stacking fault.

13. The apparatus of claim 9 , wherein the first semiconductor device is separated from the second semiconductor device by a stacking fault separation region disposed outside of an active region of the first portion and outside of the an active region of the second portion.

14. The apparatus of claim 9 , wherein the termination region has an outer perimeter different that has an aspect ratio different than an aspect ratio of the first portion or the aspect ratio of the second portion.

15. An apparatus for a silicon carbide (SiC) crystal semiconductor device, comprising:

a first portion of a semiconductor device having at least a portion defined within an epitaxial layer of a silicon carbide crystal and having a length greater than a width, the length of the first portion of the semiconductor device being aligned along an off-orientation direction from a basal plane of the silicon carbide crystal, the semiconductor device being a vertically-oriented device;

a second portion of a semiconductor device having a length greater than a width, the length of the second portion of the semiconductor device being aligned parallel to the first portion of the semiconductor device; and

a stacking fault separation region disposed between the first portion and the second portion, the stacking fault separation region having a width equal to or greater than a thickness of the epitaxial layer.

16. The apparatus of claim 15 , wherein the width of the separation region is greater than two times the thickness of the epitaxial layer.

17. The apparatus of claim 15 , wherein the width of the separation region is greater than a drift region of the semiconductor device included in the epitaxial layer.

18. The apparatus of claim 15 , wherein the width of the separation region is greater than two times a drift region of the semiconductor device included in the epitaxial layer.

19. The apparatus of claim 15 , further comprising:

a termination region disposed at least partially around the first portion of the semiconductor device and at least partially around the second portion of the semiconductor device.

20. The apparatus of claim 15 , wherein the stacking fault separation region is defined by a region free of minority carriers when the semiconductor device is operating.