Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)
A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal.
1. A method, comprising: following exposure of a first semiconductor surface for a first metal source and/or drain of a first field-effect transistor (FET) and a second semiconductor surface for a second metal source and/or drain of a second FET, creating a first metal layer for the first metal source and/or drain, the first metal layer having (i) a workfunction greater than an ionization potential of a semiconductor proximate to an interface between the first metal layer and a semiconductor comprising a channel of the first FET, and (ii) a thickness of at least 1 nm but no more than 100 nm; and creating a second metal layer for the second metal source and/or drain and capping the first metal layer with a thickness of no less than 1 nm, the second metal layer having a workfunction less than an electron affinity of a semiconductor comprising a channel of the second FET.
2. The method of claim 1 , further comprising depositing a third metal layer to a thickness of at least 10 nm on the second metal layer, the third metal layer having a workfunction greater than the workfunction of the second metal layer but less than the workfunction of the first metal layer.
3. The method of claim 1 , wherein the first metal layer consists primarily of one or more of the following or a mixture of two or more of the following: Pt, Ir, a compound including Pt, a compound including Ir, and has a thickness of at least 1 nm but no more than 100 nm; and the second metal layer has a thickness of no less than 1 nm consisting primarily of at least one or more of: Mg, Rb, Cs, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Rb, and Cs and a compound including two or more of Mg, Rb, Cs, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Rb, and Cs.
4. The method of claim 2 , wherein the third metal layer has a thickness of at least 10 nm on the second metal layer, and the third metal layer consists primarily of one or more metals with the exception of: Mg, Rb, Cs, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Rb, and Cs.