Magnetoresistive element and magnetic memory

1. A magnetoresistive element comprising:

a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface;

a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction; and

a first nonmagnetic layer between the first and second magnetic layers,

wherein the first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof, the first magnetic layer has C-axis directing the perpendicular direction, and a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

2. The element of claim 1 ,

wherein the first magnetic layer further comprises nickel (Ni) or vanadium (V).

3. The element of claim 1 ,

wherein the first nonmagnetic layer is a magnesium oxide.

4. The element of claim 1 , further comprising:

a third magnetic layer which reduces or adjusts a leakage magnetic field from the second magnetic layer; and

a second nonmagnetic layer between the second and third magnetic layers,

wherein the third magnetic layer has an easy-axis in the perpendicular direction.

5. The element of claim 4 ,

wherein saturated magnetization M S2 and a film thickness t 2 of the second magnetic layer and saturated magnetization M S3 and a film thickness t 3 of the third magnetic layer satisfy a relationship of M S2 ×t 2 <M S3 ×t 3 , and

the magnetization directions of the second and third magnetic layers maintain an anti-parallel state.

6. The element of claim 1 , further comprising:

an interface layer between the second magnetic layer and the first nonmagnetic layer,

wherein the interface layer is an alloy (Co 100-x —Fe x ) 100-y B y including Co, Fe and B, where x≧20 at % and 0<y≦30 at %.

7. The element of claim 6 ,

wherein the interface layer has one of a cubic structure and a tetragonal structure, and is (100)-oriented.

8. The element of claim 1 , further comprising:

an interface layer between the first magnetic layer and the first nonmagnetic layer,

wherein the interface layer is an alloy (Co 100-x —Fe x ) 100-y B y including Co, Fe and B, where x≧20 at % and 0<y≦30 at %.

9. The element of claim 8 ,

wherein the interface layer has one of a cubic structure and a tetragonal structure, and is (100)-oriented.

10. A magnetic memory comprising:

a memory cell array having memory cells,

wherein each of the memory cells comprises:

the magnetoresistive element of claim 1 ; and

first and second electrodes sandwiching the magnetoresistive element and applying a current to the magnetoresistive element.

11. The memory of claim 10 , further comprising:

a first wiring line which is electrically connected to the first electrode;

a second wiring line which is electrically connected to the second electrode; and

a write circuit which is electrically connected to the first and second wiring lines and supplies the current to the magnetoresistive element.

12. The memory of claim 11 ,

wherein each of the memory cells includes a selective transistor which is electrically connected between the second electrode and the second wiring line.